Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.
Tight confinement of light in photonic cavities helps realize high optical intensity with strong field gradients. We designed a nanoscale resonator device based on a one-dimensional photonic crystal slot cavity. Our design allows for highly localized optical modes with theoretically predicted quality factors (Q factors) in excess of 10 6 . The design was implemented experimentally both in a high-contrast refractive index system (silicon), as well as in medium refractive-index-contrast devices made from aluminum nitride. We achieved an extinction ratio of 21 dB in critically coupled resonators using an on-chip readout platform with loaded Q as high as 33,000. Our approach holds promise for ultrasmall optomechanical resonators for high-frequency operation and sensing applications.