Dr. Chih-Ming Ke Profile

Dr. Chih-Ming Ke

Academician/Dept Manager

SPIE Involvement:

Author

Publications (36)

Proceedings Article | 28 March 2017 Paper

Paper

Application of advanced diffraction based optical metrology overlay capabilities for high-volume manufacturing

Kai-Hsiung Chen, Guo-Tsai Huang, Hung-Chih Hsieh, Wei-Feng Ni, S. M. Chuang, T. K. Chuang, Chih-Ming Ke, Jacky Huang, Shiuan-An Rao, Aysegul Cumurcu Gysen, Maxime d'Alfonso, Jenny Yueh, Pavel Izikson, Aileen Soco, Jon Wu, Tjitte Nooitgedagt, Jeroen Ottens, Yong Ho Kim, Martin Ebert

Proceedings Volume 10145, 1014528 (2017) https://doi.org/10.1117/12.2257894

KEYWORDS: Overlay metrology, Metrology, High volume manufacturing, Scatterometry, Diffraction, Optical metrology, Lithography, Process control, Optical lithography, Time metrology, Image registration, Target acquisition, Semiconducting wafers

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Proceedings Article | 28 March 2017 Presentation + Paper

Presentation + Paper

A complete methodology towards accuracy and lot-to-lot robustness in on-product overlay metrology using flexible wavelength selection

Kaustuve Bhattacharyya, Arie den Boef, Marc Noot, Omer Adam, Grzegorz Grzela, Andreas Fuchs, Martin Jak, Sax Liao, Ken Chang, Vincent Couraudon, Eason Su, Wilson Tzeng, Cathy Wang, Christophe Fouquet, Guo-Tsai Huang, Kai-Hsiung Chen, Y. C. Wang, Kevin Cheng, Chih-Ming Ke, L. G. Terng

Proceedings Volume 10145, 101450A (2017) https://doi.org/10.1117/12.2257662

KEYWORDS: Overlay metrology, Polarization, Semiconducting wafers, Defense systems, Process control, Wafer-level optics, Diffraction gratings, Solids, Metrology, Image quality, Target detection, Detection and tracking algorithms, Diffraction, Thin films

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Proceedings Article | 8 March 2016 Paper

Paper

Improving focus performance at litho using diffraction-based focus metrology, novel calibration methods, interface, and control loop

Jiarui Hu, Y. L. Chen, K. H. Chen, Brian Lee, Frankie Tsai, C. M. Ke, C. H. Liao, Desmond Ngo, Benny Gosali, Robin Tijssen, Vincent Huang, Ward Tu, Marc Noot, Maryana Escalante Marun, Christian Leewis, Carlo Luijten, Frank Staals, Martijn Van Veen, Francois Furthner, Stuart Young, Kaustuve Bhattacharyya

Proceedings Volume 9778, 977829 (2016) https://doi.org/10.1117/12.2220373

KEYWORDS: Metrology, Calibration, Scanners, Process control, Interfaces, Optical lithography, Semiconducting wafers, Photoresist materials, Finite element methods, Inspection, Data modeling, Diffraction

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Proceedings Article | 8 March 2016 Paper

Paper

A novel method to quantify the complex mask patterns

Yu-Lung Tung, Che-Yuan Sun, Shu-Chuan Chuang, Woei-Bin Luo, Jia-Rui Hu, Hsiang-Lin Chen, Hua-Tai Lin, Chih-Ming Ke, Tsai-Sheng Gau

Proceedings Volume 9778, 97783S (2016) https://doi.org/10.1117/12.2218346

KEYWORDS: Photomasks, Optical lithography, Critical dimension metrology, Optical proximity correction, Image processing, Process control, 193nm lithography, Lithography, Semiconductors, Performance modeling, Electron beam lithography, Mask making, Metrology

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Proceedings Article | 2 April 2014 Paper

Paper

Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)

Kai-Hsiung Chen, GT Huang, KS Chen, C. Hsieh, YC Chen, CM Ke, TS Gau, YC Ku, Kaustuve Bhattacharyya, Jacky Huang, Arie den Boef, Maurits v. d. Schaar, Martijn Maassen, Reinder Plug, Youping Zhang, Steffen Meyer, Martijn van Veen, Chris de Ruiter, Jon Wu, Hua Xu, Tatung Chow, Charlie Chen, Eric Verhoeven, Pu Li, Paul Hinnen, Greet Storms, Kelvin Pao, Gary Zhang, Christophe Fouquet, Takuya Mori

Proceedings Volume 9050, 90500S (2014) https://doi.org/10.1117/12.2047098

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Back end of line, Scanners, Diffraction, Front end of line, Process control, Etching

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Proceedings Article | 13 May 2013 Paper

Paper

Sub-nanometer in-die overlay metrology: measurement and simulation at the edge of finiteness

Henk-Jan Smilde, Martin Jak, Arie den Boef, Mark van Schijndel, Murat Bozkurt, Andreas Fuchs, Maurits van der Schaar, Steffen Meyer, Stephen Morgan, Kaustuve Bhattacharyya, Guo-Tsai Huang, Chih-Ming Ke, Kai-Hsiung Chen

Proceedings Volume 8788, 87881N (2013) https://doi.org/10.1117/12.2020930

KEYWORDS: Overlay metrology, Metrology, Diffraction gratings, Diffraction, Semiconducting wafers, Sensors, Semiconductors, Environmental sensing, Wafer-level optics, Geometrical optics

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Proceedings Article | 18 April 2013 Paper

Paper

Reduction of image-based ADI-to-AEI overlay inconsistency with improved algorithm

Yen-Liang Chen, Shu-Hong Lin, Kai-Hsiung Chen, Chih-Ming Ke, Tsai-Sheng Gau

Proceedings Volume 8681, 86812P (2013) https://doi.org/10.1117/12.2010570

KEYWORDS: Semiconducting wafers, Overlay metrology, Artificial intelligence, Evolutionary algorithms, Quality measurement, Microscopes, Etching, Semiconductor manufacturing, Optical properties, Chemical mechanical planarization

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Proceedings Article | 10 April 2013 Paper

Paper

On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

Kaustuve Bhattacharyya, Chih-Ming Ke, Guo-Tsai Huang, Kai-Hsiung Chen, Henk-Jan Smilde, Andreas Fuchs, Martin Jak, Mark van Schijndel, Murat Bozkurt, Maurits van der Schaar, Steffen Meyer, Miranda Un, Stephen Morgan, Jon Wu, Vincent Tsai, Frida Liang, Arie den Boef, Peter ten Berge, Michael Kubis, Cathy Wang, Christophe Fouquet, L. Terng, David Hwang, Kevin Cheng, TS Gau, Y. C. Ku

Proceedings Volume 8681, 868104 (2013) https://doi.org/10.1117/12.2011878

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Time metrology, Chemical mechanical planarization, Scanners, Diffraction, Thin film coatings, Tin, High volume manufacturing

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Proceedings Article | 5 April 2012 Paper

Paper

Quality indicators of image-based overlay

Yen-Liang Chen, Jacky Huang, Rita Lee, Chen-Ming Wang, Chih-Ming Ke, Tsai-Sheng Gau

Proceedings Volume 8324, 83241C (2012) https://doi.org/10.1117/12.917995

KEYWORDS: Overlay metrology, Artificial intelligence, Image quality, Quality measurement, Image processing, Tolerancing, Process control, Semiconducting wafers, Optical alignment, Metrology

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Proceedings Article | 3 April 2012 Paper

Paper

Evaluation of a novel ultra small target technology supporting on-product overlay measurements

Henk-Jan Smilde, Arie den Boef, Michael Kubis, Martin Jak, Mark van Schijndel, Andreas Fuchs, Maurits van der Schaar, Steffen Meyer, Stephen Morgan, Jon Wu, Vincent Tsai, Cathy Wang, Kaustuve Bhattacharyya, Kai-Hsiung Chen, Guo-Tsai Huang, Chih-Ming Ke, Jacky Huang

Proceedings Volume 8324, 83241A (2012) https://doi.org/10.1117/12.916382

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Diffraction gratings, Diffraction, Standards development, Reticles, Lithography, Scatterometry, Physics

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Proceedings Article | 20 April 2011 Paper

Paper

Accuracy of diffraction-based and image-based overlay

Chih-Ming Ke, Guo-Tsai Huang, Jacky Huang, Rita Lee

Proceedings Volume 7971, 79711E (2011) https://doi.org/10.1117/12.880037

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Critical dimension metrology, Transmission electron microscopy, Lithography, Scanners, Light sources, Very large scale integration, Electron microscopes

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There is no overlay standard in the world. For critical dimension (CD), we may use the VLSI standard or programmed pitch offsets to determine the CD accuracy or CD sensitivity. Programmed overlay offsets can provide relatively accurate sub-nanometer level overlay splits but it is only on a single layer and does not contain layer-to-layer process variations. The splits of scanner magnification can check the trend of overlay sensitivity but it cannot provide the exact value of overlay offsets. Transmission electron microscopes (TEM) can be used as a final overly error verification tool. However, TEM sample preparation for after-development-inspection (ADI) will introduce even more sample distortion errors. Therefore, unlike CD metrology, there is no clean and systematic way to verify the accuracy of overlay metrology. These technical barriers necessitate matching diffraction-based overlay and image-based overlay, especially for sub-nanometer point-to-point matching requirement. In this paper, we compare the correlation of ADI to after-etch-inspection (AEI) by using image-based box-in-box overlay measurement and diffraction-based overlay measurement on the same wafer. The ADI-to-AEI overlay data consistency plays a key role for lithography overlay APC success and AEI overlay should be treated as the final standard for overlay accuracy. We found that process-induced asymmetric profiles of overlay marks will lead to ADI-to-AEI overlay bias. This bias is proportional to the degree of profile asymmetry and different color/wavelength have different sensitivity to this ADI-to-AEI bias. Our experimental results show that the ADI-to-AEI overlay data bias can indeed be significantly improved by selecting the color/wavelength with minimum sensitivity to the asymmetry profile. These results make us believe that overlay metrology recipe setup is quite critical no matter for image-based overlay or diffraction-based overlay. Otherwise, problematic overlay data will be taken into APC feedback loop and lead to wrong overlay correction.

Proceedings Article | 29 March 2011 Paper

Paper

Litho process control via optimum metrology sampling while providing cycle time reduction and faster metrology-to-litho turn around time

K.-H. Chen, Jacky Huang, W.-T. Yang, C.-M. Ke, Y.-C. Ku, John Lin, Kaustuve Bhattacharyya, Evert Mos, Mir Shahrjerdy, Maurits van der Schaar, Steffen Meyer, Spencer Lin, Jon Wu, Sophie Peng, Albert Li, Nikki Chang, Roy Chu, Cathy Wang

Proceedings Volume 7971, 797105 (2011) https://doi.org/10.1117/12.879218

KEYWORDS: Semiconducting wafers, Metrology, Overlay metrology, Time metrology, Process control, Lithography, Tin, Feedback control, Scanners, Optical lithography

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SPIE Journal Paper | 1 January 2011

New approaches for scatterometry-based metrology for critical distance and overlay measurement and process control

Kaustuve Bhattacharyya, Noelle Wright, Maurits van der Schaar, Arie den Boef, Paul Hinnen, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Cathy Wang, Chih-Ming Ke, Jacky Huang, Willie Wang

JM3, Vol. 10, Issue 1, 013013, (January 2011) https://doi.org/10.1117/12.10.1117/1.3532076

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scanners, Critical dimension metrology, Birefringence, Distance measurement, Process control, Lithography, Scanning electron microscopy

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Proceedings Article | 2 April 2010 Paper

Paper

A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography

C. Ke, Victor Shih, Jacky Huang, L. Chen, Willie Wang, G. Huang, W. Yang, Sophia Wang, C. Liang, H. Liu, H. Lee, L. Terng, T. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Marc Noot, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Gavin Liu, Wei-Shun Tzeng, Jim Chen, Andreas Fuchs, Omer Adam, Cathy Wang

Proceedings Volume 7638, 76383P (2010) https://doi.org/10.1117/12.853318

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Scanners, Back end of line, Lithography, 3D metrology, Finite element methods, Scatterometry, Critical dimension metrology

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Proceedings Article | 2 April 2010 Paper

Paper

Detection of lateral CD shift with scatterometry on grating structures in production layout

Jacky Huang, Jiarui Hu, Willie Wang, Ya-Ping Lee, Chih-Ming Ke, Tsai-Sheng Gau

Proceedings Volume 7638, 76381Q (2010) https://doi.org/10.1117/12.848522

KEYWORDS: Overlay metrology, Scatterometry, Reflectivity, Critical dimension metrology, Laser marking, Metrology, Double patterning technology, Analytical research, Optical alignment, Semiconducting wafers

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Proceedings Article | 11 December 2009 Paper

Paper

A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography

Victor Shih, Jacky Huang, Willie Wang, G. T. Huang, H. L. Chung, Alan Ho, W. T. Yang, Sophia Wang, Chih-Ming Ke, L. J. Chen, C. R. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. S. Gau, John Lin, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Mir Shahrjerdy, Vivien Wang, Spencer Lin, Jon Wu, Sophie Peng, Dennis Chang, Cathy Wang, Andreas Fuchs, Omer Adam, Karel van der Mast

Proceedings Volume 7520, 75201A (2009) https://doi.org/10.1117/12.837353

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scanners, Lithography, Back end of line, Metals, Scatterometry, Front end of line, Signal to noise ratio

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Proceedings Article | 24 March 2009 Paper

Paper

A scatterometry based CD metrology solution for advanced nodes, including capability of handling birefringent layers with uniaxial anisotropy

Chih-Ming Ke, Jimmy Hu, Willie Wang, Jacky Huang, H. Chung, C. R. Liang, Victor Shih, H. H. Liu, H. J. Lee, John Lin, Y. Fan, Tony Yen, Noelle Wright, Ruben Alvarez Sanchez, Wim Coene, Marc Noot, Kiwi Yuan, Vivien Wang, Kaustuve Bhattacharyya, Karel van der Mast

Proceedings Volume 7272, 72723R (2009) https://doi.org/10.1117/12.814909

KEYWORDS: Anisotropy, Semiconducting wafers, Scatterometry, Finite element methods, Critical dimension metrology, Birefringence, Absorption, Refractive index, Carbon, Lithography

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Proceedings Article | 23 March 2009 Paper

Paper

Overlay similarity: a new overlay index for metrology tool and scanner overlay fingerprint methodology

Chih-Ming Ke, Ching-Pin Kao, Yu-Hsi Wang, Jimmy Hu, Chen-Yu Chang, Ya-Jung Tsai, Anthony Yen, Burn Lin

Proceedings Volume 7272, 72720E (2009) https://doi.org/10.1117/12.814852

KEYWORDS: Overlay metrology, Scanners, Critical dimension metrology, Metrology, Semiconducting wafers, Calibration, Scatterometry, Wafer testing, Scanning electron microscopy, Mining

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Proceedings Article | 23 March 2009 Paper

Paper

Methodologies for evaluating CD-matching of CD-SEM

Hiroki Kawada, Chih-Ming Ke, Ya-Chun Cheng, Yu-Hsi Wang

Proceedings Volume 7272, 72720Y (2009) https://doi.org/10.1117/12.815186

KEYWORDS: Semiconducting wafers, Error analysis, Contamination, Time metrology, Automatic alignment, Analytical research, Metrology, Wafer testing, Scanning electron microscopy, Cadmium

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Proceedings Article | 23 March 2009 Paper

Paper

Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography

Chih-Ming Ke, Jimmy Hu, Willie Wang, Jacky Huang, H. Chung, C. Liang, Victor Shih, H. Liu, H. Lee, John Lin, Y. Fan, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Kiwi Yuan, Vivien Wang, Cathy Wang, Spencer Lin, Mir Shahrjerdy, Andreas Fuchs, Karel van der Mast

Proceedings Volume 7272, 72720A (2009) https://doi.org/10.1117/12.814860

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Semiconducting wafers, Critical dimension metrology, Lithography, Finite element methods, Photomasks, Scanners, Double patterning technology

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Proceedings Article | 1 December 2008 Paper

Paper

A comprehensive look at a new metrology technique to support the needs of lithography performance in near future

Jimmy Hu, Chih-Ming Ke, Willie Wang, Jacky Huang, H. L. Chung, C. R. Liang, Victor Shih, H. Liu, H. J. Lee, L. G. Terng, Y. D. Fan, Maurits van der Schaar, Kiwi Yuan, Vivien Wang, Cathy Wang, Mir Shahrjerdy, Andreas Fuchs, Kaustuve Bhattacharyya, Karel van der Mast

Proceedings Volume 7140, 71400N (2008) https://doi.org/10.1117/12.807998

KEYWORDS: Overlay metrology, Metrology, Lithography, Semiconducting wafers, Scatterometry, Photomasks, Feedback control, Optical lithography, Scanners

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Proceedings Article | 22 March 2008 Paper

Paper

Sub-nanometer pitch calibration and data quality evaluation methodology

Chih-Ming Ke, Yu-hsi Wang, Jaffee Huang, Jimmy Hu, Jacky Huang, Tsai-Sheng Gau, Burn Lin

Proceedings Volume 6922, 69220I (2008) https://doi.org/10.1117/12.775410

KEYWORDS: Metrology, Critical dimension metrology, Scanning electron microscopy, Calibration, Semiconducting wafers, Process control, Silicon, Photomasks, Chemical species, Scatterometry

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Average CD of CD SEM and scatterometry CD (OCD) have been adopted for advanced CD control. The advantages and disadvantages of these two CD metrologies have been well discussed. The target of CD uniformity (CDU) for advanced technology has been driven to 1 nm, i.e. about three and half the size of a silicon atom, which is 0.29 nm. In the real production environment, engineers need to face sub-nanometer (< 1 nm) CD variations and do the necessary process corrections to meet the 1-nm CDU requirement. In other words, advanced CD process control has already been in the world of atomic scale. It turns out that methodology to ensure the accuracy of sub-nanometer CD has become essential for advanced CD control. In this paper, we introduced a methodology to produce 0.25, 0.5, and 1 nm programmed pitch offsets through mask design. These offsets are attainable with current process capability. Pitch offsets instead of line/space width offsets were used because the pitch is relatively process insensitive. The pitch has already been widely used as a CD SEM magnification calibration standard, e.g. Hitachi m-scale 240-nm pitch and VLSI 100-nm pitch standards. We produced large and small pitch splits to meet different magnification linearity requirements. We also used optical CD to verify the programmed pitch offset. Using the raw spectrum of OCD, systematic pitch signal changes in 0.25-nm steps can be detected, ensuring that 0.25-nm pitch offset standards are meaningful. Interestingly, 0.25 nm is smaller than the 0.29-nm Si atom. We also used this standard wafer to do the sampling size or data quality evaluation for different CD SEM measurement methodologies, e.g. 150K by 150K or 80K by 35K magnifications that in turn dictates the sample size. Pitch sensitivity is strongly related to the sampling size and line-edge roughness (LER). For example, 0.25-nm pitch sensitivity needs a larger sampling size than those of 0.5-nm and 1- nm pitch sensitivities. By means of this standard wafer, we can easily quantify metrology quality as well as choose the right metrology and sampling size for advanced process control.

Proceedings Article | 5 April 2007 Paper

Paper

OCD metrology by floating n/k

Shinn-Sheng Yu, Jacky Huang, Chih-Ming Ke, Tsai-Sheng Gau, Burn Lin, Anthony Yen, Lawrence Lane, Vi Vuong, Yan Chen

Proceedings Volume 6518, 65183C (2007) https://doi.org/10.1117/12.713341

KEYWORDS: Metrology, Semiconducting wafers, Critical dimension metrology, Lithography, Thin films, Scanning electron microscopy, Process control, Deposition processes, Roentgenium, Error analysis

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Proceedings Article | 5 April 2007 Paper

Paper

In-chip overlay metrology of 45nm and 55nm processes

Y. S. Ku, C. H. Tung, Y. P. Li, H. L. Pang, C. M. Ke, Y. H. Wang, D. C. Huang, N. P. Smith, L. Binns

Proceedings Volume 6518, 65182V (2007) https://doi.org/10.1117/12.713075

KEYWORDS: Overlay metrology, Semiconducting wafers, Calibration, Data modeling, Mathematical modeling, Wafer testing, Reticles, Tolerancing, Error analysis, Process control

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Proceedings Article | 24 March 2006 Paper

Paper

ArF scanner performance improvement by using track integrated CD optimization

Jacky Huang, Shinn-Sheng Yu, Chih-Ming Ke, Timothy Wu, Yu-Hsi Wang, Tsai-Sheng Gau, Dennis Wang, Allen Li, Wenge Yang, Araki Kaoru

Proceedings Volume 6152, 615228 (2006) https://doi.org/10.1117/12.656104

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Sensors, Calibration, Error analysis, Scanners, Infrared sensors, Metrology, Wafer-level optics, Integrated optics

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Proceedings Article | 21 March 2006 Paper

Paper

Systematic optimization of the thin-film stack by minimizing CD sensitivity

Shinn-Sheng Yu, Burn Lin, Anthony Yen, Chih-Ming Ke

Proceedings Volume 6154, 615440 (2006) https://doi.org/10.1117/12.658323

KEYWORDS: Thin films, Critical dimension metrology, Reflectivity, Lithography, Refractive index, Semiconducting wafers, Silicon, Optimization (mathematics), Process control, Semiconductor manufacturing

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SPIE Journal Paper | 1 October 2005

Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles

Shinn-Sheng Yu, Burn Lin, Anthony Yen, Chih-Ming Ke, Te-Chih Huang, Bang-Chein Ho, Chun-Kuang Chen, Tsai-Sheng Gau, Hung-Chang Hsieh, Yao-Ching Ku

JM3, Vol. 4, Issue 04, 043003, (October 2005) https://doi.org/10.1117/12.10.1117/1.2137967

KEYWORDS: Thin films, Wave propagation, Magnetism, Optical lithography, Critical dimension metrology, Interfaces, Scanners, Absorption, Lithography, Multilayers

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Proceedings Article | 10 May 2005 Paper

Paper

Application of 3D scatterometry to contacts and vias at 90nm and beyond

Jacky Huang, Kelly Barry, Chih-Ming Ke, Burn Lin, Allen Li

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601023

KEYWORDS: Semiconducting wafers, Scatterometry, Critical dimension metrology, Metrology, 3D metrology, Scanning electron microscopy, Etching, 3D applications, Cadmium, Inspection

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Proceedings Article | 10 May 2005 Paper

Paper

Evaluation of line and hole measurement by high-resolution low-magnification CD SEM

Chih-Ming Ke, Chi-Chuang Lee, Yu-Hsi Wang, Heng-Jen Lee, Chin-Hsiang Lin, Tsai-Sheng Gau, Burn Lin, Hiroki Kawada, Kazuhiro Ueda, Hiroaki Nomura, Nelson Ren, Takashi Iizumi

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601133

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Line edge roughness, Finite element methods, Metrology, Wafer-level optics, Optical testing, Cadmium, Inspection

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Proceedings Article | 24 May 2004 Paper

Paper

Low-impact resist metrology: the use of ultralow voltage for high-accuracy performance

Ganesh Sundaram, Neal Sullivan, Tung Mai, Chih-Ming Ke

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.539221

KEYWORDS: Semiconducting wafers, Metrology, Electrons, Line edge roughness, Critical dimension metrology, Monte Carlo methods, Optical proximity correction, Silicon, Scanning electron microscopy, Photoresist materials

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Previous results have demonstrated that the most significant line slimming occurs during the initial measurement and is a strong function of landing energy. Since it is difficult to accurately estimate the initial CD value (M0), many test protocols rely on the measurement change between the first and second measurement pass (M1-M2), to evaluate line slimming. However, since the slimming behavior of ArF resist systems has been shown to be exponential and dependant upon the resist formulation, using M1-M2 as the metric for comparing between CD SEM suppliers can severely underestimate the impact of a particular system setup on line slimming. The experiments reported here represent an attempt to assess the impact of the initial measurement (M0-M1) on line slimming. A series of experiments were designed to assess the impact of landing energy on line slimming for ArF photoresist. To validate the results of the experiments, an etched poly wafer was used as a control sample to ensure that metrology differences noted on the ArF resist between a high voltage 800 eV and an Ultra-Low Voltage (ULV) 100 eV condition arose purely from the interaction of the E-beam with the resist. The most significant line slimming was observed to occur during the first measurement at 800 eV, with greater than 10 nm of slimming observed on a nominal 120nm lines), followed by relatively stable slimming performance thereafter. The 100 eV condition demonstrated a significantly reduced level of slimming as a result of the first measurement; if there was any slimming, it could not be distinguished from the uncertainty in the estimate of the initial CD (M0). Measurements were also performed dynamically and at the ULV 100 eV condition slimming was indistinguishable from contamination induced linewidth growth, leading to an initial value closely matching the unperturbed linewidth (M0). The superior ArF line slimming performance at ULV is consistent with numerous published results, and demonstrates the need to assess slimming by a meaningful metric through a comparison of the initial measurement (M1) at high and low voltages, or by a comparison of the initial measurement M1 with the unperturbed linewidth (M0). The results of the experiments conducted point to a need for Low Impact Resist Measurement performance, which is fulfilled by Ultra-Low Voltage Metrology.

Proceedings Article | 24 May 2004 Paper

Paper

Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193 nm lithography

Chih-Ming Ke, Hsueh-Liang Hung, Anderson Chang, Jeng-Horng Chen, Tsai-Sheng Gau, Yao-Ching Ku, Burn Lin, Tadashi Otaka, Kazuhiro Ueda, Hiroki Kawada, Hiroaki Nomura, Nelson Ren

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536147

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Critical dimension metrology, Lithography, Metrology, Silicon, Standards development, Very large scale integration, Distortion, Inspection

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Proceedings Article | 24 May 2004 Paper

Paper

90-nm lithography process characterization using ODP scatterometry technology

Chih-Ming Ke, Shinn-Sheng Yu, Yu-Hsi Wang, Yu-Jun Chou, Jeng-Horng Chen, Bih-Huey Lee, Hong-Yuan Chu, Hua-Tai Lin, Tsai-Sheng Gau, Chih-Hsiang Lin, Yao-Ching Ku, Burn Lin, Jacky Huang, J. Hsu, Victor Liu, Dave Hetzer, Lip Yap, Wenge Yang, Kaoru Araki

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536123

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Transmission electron microscopy, Metrology, Scatterometry, Finite element methods, Process control, Lithography, Wafer-level optics

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Proceedings Article | 4 November 2003 Paper

Paper

Thin film 193-nm TNK measurement using multidomain genetic algorithm (MDGA) and with a combination of Beam Profile Reflectometry (BPR), Absolute Ellipsometry (AE), and spectroscopic ellipsometry (SE)

Jon Opsal, Jingmin Leng, Chih-Ming Ke, Pei-Hung Chen, Jeng-Horng Chen, Yao-Ching Ku

Proceedings Volume 5188, (2003) https://doi.org/10.1117/12.507466

KEYWORDS: Oxides, Semiconducting wafers, Calibration, Thin films, Standards development, Genetic algorithms, Silicon, Reflectivity, Silicon films, Reflectometry

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In the l30nm process, controlling the critical dimension uniformity (CDU) within a wafer is crucial. In order to minimize CDU within a wafer, CD swing amplitude against film thickness must be minimized. It is observed that the CD swing amplitude is closely related to the reflectivity of the anti-reflective coating (ARC) layer under the resist. The suppressed reflectivity (ideally zero) from the ARC layer and underlying layers can be achieved by properly selecting a combination of thickness (T), refractive index (N) and extinction coefficient (K) of the ARC layer. Accurate and repeatable measurements of T, N, and K at a wavelength of 193nm play a key role in this film optimization process. In this paper we propose a new method to simultaneously measure T, N, and K for various silicon oxynitride (SION) and organic ARC films. The new methodology uses a multi-domain genetic algorithm (MDGA) to search for global fitting residual minima for SION and organic ARC films using 21-point line-scan data sets logged on each wafer with a combination of BPR, AE and SE measurement technologies. The MDGA-obtained dispersion curves form constituents of a Bruggeman effective medium approximation (EMA) model. By using this unique metrology tool combination, swing amplitudes can be reduced to less than 5nm. The measurement variations of N&K at 193nm from machine to machine on SION and organic ARC films can be minimized to as small as 0.002. We point out that there are no 193nm N&K standards in the world. In this work, we used a set of Therma-Wave standards with thicknesses traceable to NIST standards. We also used the published thermal oxide and crystalline Si dielectric constants (i.e., N&Ks) as our standards for dispersion. The matching of SE (as well as the other technologies) of each tool is ensured through calibrations of SE to the same set of standards. Finally, a recipe using the combination of BPR, AE, and SE technologies allows one to deal with the large TNK variations encountered in the production environment without losing the sensitivity to measure TNK precisely and accurately. On the contrary, a TNK recipe with SE technology only may yield reasonable precision results but would lose the sensitivity to the thin film TNK variation within the wafer and among the wafers.

Proceedings Article | 2 June 2003 Paper

Paper

Application of scatterometry for CD and profile metrology in 193-nm lithography process development

Li-Jui Chen, Chih-Ming Ke, Shinn Sheng Yu, Tsai-Sheng Gau, Pei-Hung Chen, Yao Ching Ku, Burn Lin, Dan Engelhard, Dave Hetzer, Jason Yang, Kelly Barry, Lip Yap, Wenge Yang

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483692

KEYWORDS: Scatterometry, Critical dimension metrology, Metrology, Lithography, Scanning electron microscopy, Semiconducting wafers, Deep ultraviolet, Scatter measurement, Reflectometry, Photoresist materials

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Proceedings Article | 24 July 2002 Paper

Paper

Stable E-beam metrology on ArF resist for advanced process control

Chih-Ming Ke, Anthony Yen, Jason Yee, Mico Chu, Steven Fu, Eros Huang, Debbie Yeh

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474260

KEYWORDS: Plasma, Plasma etching, Etching, Plasma treatment, Metrology, Critical dimension metrology, Photoresist materials, Process control, Ions, Scanning electron microscopy

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Proceedings Article | 16 July 2002 Paper

Paper

Effect of various ArF resist shrinkage amplitudes on CD bias

Chih-Ming Ke, Tsai-Sheng Gau, Pei-Hung Chen, Anthony Yen, Burn Lin, Tadashi Otaka, Takashi Iizumi, Katsuhiro Sasada, Kazuo Ueda

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473428

KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Time metrology, Etching, Optical testing, Image resolution, Inspection, Plasma, Semiconducting wafers, Metrology

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Showing 5 of 36 publications

Conference Committee Involvement (12)

Metrology, Inspection, and Process Control for Microlithography XXXII

26 February 2018 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXXI

27 February 2017 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXX

22 February 2016 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXIX

23 February 2015 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXVIII

24 February 2014 | San Jose, California, United States

Showing 5 of 12 Conference Committees

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