Nitride-based materials have been widely used for photodetectors, however, Nitride-based p-i-n photodetectors
with the use of InGaN as the intrinsic layer to modify the cut-off wavelength from 360 to 500nm was few reported. In
this study, the p-i-n structure photodetectors with a p-GaN layer, an InGaN active layer and an n-type GaN layer were
fabricated successfully. The Ni catalysts technology was applied in p-GaN layer to enhance ohmic characteristics of ptype
layer. It was found that the photo-to-dark contrast ratios at 0.5V bias are 51.83. The cut-off wavelength was around
Organic light-emitting diodes (OLEDs) with NPB/LiF multiple layers were proposed and fabricated. It was found that the insertion of NPB/LiF multiple layers can balance the charge injection and transport, which is helpful in enhancing the performance of OLEDs. It was also found that we can achieve the device with the best performance from the OLED with three pairs of LiF/NPB (0.3nm/15nm).