Mr. Ching-Yu Chang Profile

Ching-Yu Chang

Deputy Director at Taiwan Semiconductor Manufacturing Co Ltd

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Publications (16)

PROCEEDINGS ARTICLE | March 13, 2018

Nanoscale inhomogeneity and photoacid generation dynamics in extreme ultraviolet resist materials

Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV

KEYWORDS: Extreme ultraviolet, Systems modeling, Monte Carlo methods, Polymers, Molecules, Oxygen, Diffusion, Chemical species, Extreme ultraviolet lithography, Ions

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The development of extreme ultraviolet (EUV) lithography towards the 22 nm node and beyond depends critically on the availability of resist materials that meet stringent control requirements in resolution, line edge roughness, and sensitivity. However, the molecular mechanisms that govern the structure-function relationships in current EUV resist systems are not well understood. In particular, the nanoscale structures of the polymer base and the distributions of photoacid generators (PAGs) should play a critical roles in the performance of a resist system, yet currently available models for photochemical reactions in EUV resist systems are exclusively based on homogeneous bulk models that ignore molecular-level details of solid resist films. In this work, we investigate how microscopic molecular organizations in EUV resist affect photoacid generations in a bottom-up approach that describes structure-dependent electron-transfer dynamics in a solid film model. To this end, molecular dynamics simulations and stimulated annealing are used to obtain structures of a large simulation box containing poly(4-hydroxystyrene) (PHS) base polymers and triphenylsulfonium based PAGs. Our calculations reveal that ion-pair interactions govern the microscopic distributions of the polymer base and PAG molecules, resulting in a highly inhomogeneous system with nonuniform nanoscale chemical domains. Furthermore, the theoretical structures were used in combination of quantum chemical calculations and the Marcus theory to evaluate electron transfer rates between molecular sites, and then kinetic Monte Carlo simulations were carried out to model electron transfer dynamics with molecular structure details taken into consideration. As a result, the portion of thermalized electrons that are absorbed by the PAGs and the nanoscale spatial distribution of generated acids can be estimated. Our data reveal that the nanoscale inhomogeneous distributions of base polymers and PAGs strongly affect the electron transfer and the performance of the resist system. The implications to the performances of EUV resists and key engineering requirements for improved resist systems will also be discussed in this work. Our results shed light on the fundamental structure dependence of photoacid generation and the control of the nanoscale structures as well as base polymer-PAG interactions in EVU resist systems, and we expect these knowledge will be useful for the future development of improved EUV resist systems.

PROCEEDINGS ARTICLE | March 13, 2018

Directed Self-Assembly (DSA) for contact applications

Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV

KEYWORDS: Directed self assembly, Polymethylmethacrylate, Picosecond phenomena, Etching, Scanning electron microscopy, Oxides, Optical lithography, Double patterning technology, Bridges, Polymers

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PROCEEDINGS ARTICLE | March 27, 2014

Effective resist profile control

Proc. SPIE. 9051, Advances in Patterning Materials and Processes XXXI

KEYWORDS: Lithography, Photomasks, Polymers, Semiconducting wafers, Finite element methods, Photoresist processing, Defect inspection, Quantitative analysis, Organic materials, Silicon

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PROCEEDINGS ARTICLE | March 29, 2013

New negative resist design with novel photo-base generator

Proc. SPIE. 8682, Advances in Resist Materials and Processing Technology XXX

KEYWORDS: Coating, Polymers, Lithography, Silicon, Photoresist processing, FT-IR spectroscopy, Diffusion, Prototyping, Chemical analysis, Semiconductor manufacturing

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PROCEEDINGS ARTICLE | March 19, 2012

Contrast improvement with balanced diffusion control of PAG and PDB

Proc. SPIE. 8325, Advances in Resist Materials and Processing Technology XXIX

KEYWORDS: Polymers, Diffusion, Line width roughness, Optics manufacturing, Scattering, Printing, Semiconductor manufacturing, Resolution enhancement technologies, Inspection, Immersion lithography

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PROCEEDINGS ARTICLE | April 16, 2011

A study of conductive material for e-beam lithography

Proc. SPIE. 7972, Advances in Resist Materials and Processing Technology XXVIII

KEYWORDS: Electrons, Metals, Polymers, Scanning electron microscopy, Electron beam lithography, Monte Carlo methods, Polymer thin films, Critical dimension metrology, Resistance, Photomasks

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PROCEEDINGS ARTICLE | March 30, 2010

Resist residue removal using UV ozone treatment

Proc. SPIE. 7639, Advances in Resist Materials and Processing Technology XXVII

KEYWORDS: Ultraviolet radiation, Polymers, Etching, Ozone, Photoresist processing, Semiconducting wafers, Natural surfaces, Lithography, Wet etching, Molecules

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PROCEEDINGS ARTICLE | March 30, 2010

Photobase generator and photo decomposable quencher for high-resolution photoresist applications

Proc. SPIE. 7639, Advances in Resist Materials and Processing Technology XXVII

KEYWORDS: Photoresist materials, Lithography, Diffusion, Photo decomposable quencher, Line width roughness, Polymers, Electron beam lithography, Photoresist developing, Image processing, Photomasks

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PROCEEDINGS ARTICLE | May 11, 2009

Mask defect auto disposition based on aerial image in mask production

Proc. SPIE. 7379, Photomask and Next-Generation Lithography Mask Technology XVI

KEYWORDS: Photomasks, Inspection, Optical proximity correction, Semiconducting wafers, SRAF, Lithography, Defect inspection, Scanners, Image analysis, Databases

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PROCEEDINGS ARTICLE | April 6, 2007

Effect of novel rinsing material and surfactant treatment on the resist pattern performance

Proc. SPIE. 6519, Advances in Resist Materials and Processing Technology XXIV

KEYWORDS: Line width roughness, Capillaries, Scanners, Scanning electron microscopy, Logic, Liquids, Semiconducting wafers, Skin, Image processing, Immersion lithography

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PROCEEDINGS ARTICLE | March 29, 2006

A novel switchable BARC (SBARC) and process to improve pattern collapse and defect control

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: Satellites, Water, Etching, Adhesives, Capillaries, Polymers, Digital watermarking, Photoresist processing, Lithography, Switches

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PROCEEDINGS ARTICLE | March 21, 2006

Development of cleaning process for immersion lithography

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Semiconducting wafers, Particles, Scanners, Contamination, Chemical elements, Transparency, Immersion lithography, Interfaces, Industrial chemicals, Oxides

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PROCEEDINGS ARTICLE | March 15, 2006

Watermark defect formation and removal for immersion lithography

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Digital watermarking, Semiconducting wafers, Immersion lithography, Particles, Polymers, Scanning electron microscopy, Critical dimension metrology, Materials processing, Scanners, Lithography

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PROCEEDINGS ARTICLE | May 4, 2005

Double exposure for the contact layer of the 65-nm node

Proc. SPIE. 5753, Advances in Resist Technology and Processing XXII

KEYWORDS: Image processing, Photomasks, Ultraviolet radiation, Optical lithography, Printing, Photoresist processing, Polymers, Semiconductors, Critical dimension metrology, Image resolution

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The critical dimension (CD) of contact holes for the 65-nm application specific integrated circuit (ASIC) is 100 nm according to the 2002 update of the International Technology Roadmap for Semiconductors. The common through-pitch depth of focus (DOF) of such contact holes is very small using the current ArF exposure tool. High-numerical-aperture (NA) ArF exposure tools are not expected to improve the common DOF that scales by the square of the numerical half aperture. High-transmission attenuated phase-shifting masks increase the DOF of isolated contact holes. Off-axis illumination such as annular or quadrupole illumination improves the DOF of dense contact holes. Nonetheless, both the isolated and the dense contact holes need to be printed within spec on logic circuit. To delineate 100-nm contact holes at several different pitches, we proposed the pack-and-unpack (PAU) process which employs double exposures. First, dummy holes are added to the surroundings of isolated contact holes facilitating the patterning of the resultant dense pattern with a resolution enhancement technique that favors dense contact holes. For example, dense holes are packed to 180-nm pitch and imaged with high-NA lens setting and quadrupole illumination. Then, the second image is used to open the desired holes or block the dummy contact holes. The purpose of this study was to develop new methods and new materials for the patterning of the second image. Three approaches were investigated. The first approach was forming an isolation layer to protect the first image; second, applying UV curing to harden the first image; third, using alcohol-based resists to pattern the second image. Among those three approaches of printing the second image, using resist in alcohols is the most convenient method. Even though the CD control of the second image is not so critical, resolution and process window of resists may need further improvement for 45-nm node and below. Using the second approach allows conventional ArF resists, which does not raise as many concerns as the alcohol-based resists. With the first approach, a lot more work is needed to prevent intermixing and reactions between the isolation layer and the resist for the second image. The results of this work point to the directions for material developments of the PAU process. Both the alcohol-based resists and UV curing are good approaches for PAU. Further characterizations such as DOF, exposure latitude (EL), and mask error factor (MEF) on them will be carried out in the near future.

PROCEEDINGS ARTICLE | May 24, 2004

Overlay errors induced by metallic stress: mechanism and solutions

Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII

KEYWORDS: Metals, Semiconducting wafers, Etching, Overlay metrology, Scanning electron microscopy, Inspection, Control systems, Optical alignment, Thin film coatings, Materials processing

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PROCEEDINGS ARTICLE | June 26, 2003

Low-proximity contact hole formation by using double-exposure technology (DET)

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Argon, Etching, Photoresist processing, Photomasks, Resolution enhancement technologies, Ion implantation, Skin, Lithography, Printing, Optical lithography

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Showing 5 of 16 publications

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