Dr. Christofer Silfvenius Profile

Dr. Christofer Silfvenius

at PhoXtal Communications

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Author

Publications (3)

Proceedings Article | 18 November 2008 Paper

InP-based monolithically integrated 1310/1550nm diplexer/triplexer

C. Silfvenius, M. Swillo, J. Claesson, E. Forsberg, N. Akram, M. Chacinski, L. Thylén

Proceedings Volume 7135, 71351Q (2008) https://doi.org/10.1117/12.803366

KEYWORDS: Waveguides, Photodiodes, Optical amplifiers, Semiconductor lasers, Wavelength division multiplexing, Fiber to the x, Refractive index, Staring arrays, Interfaces, Polarization

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Multiple streams of high definition television (HDTV) and improved home-working infrastructure are currently driving forces for potential fiber to the home (FTTH) customers [1]. There is an interest to reduce the cost and physical size of the FTTH equipment. The current fabrication methods have reached a cost minimum. We have addressed the costchallenge by developing 1310/(1490)/1550nm bidirectional diplexers, by monolithic seamless integration of lasers, photodiodes and wavelength division multiplexing (WDM) couplers into one single InP-based device. A 250nm wide optical gain profile covers the spectrum from 1310 to 1550nm and is the principal building block. The device fabrication is basically based on the established configuration of using split-contacts on continuos waveguides. Optical and electrical cross-talks are further addressed by using a Y-configuration to physically separate the components from each other and avoid inline configurations such as when the incoming signal travels through the laser component or vice versa. By the eliminated butt-joint interfaces which can reflect light between components or be a current leakage path and by leaving optically absorbing (unpumped active) material to surround the components to absorb spontaneous emission and nonintentional reflections the devices are optically and electrically isolated from each other. Ridge waveguides (RWG) form the waveguides and which also maintain the absorbing material between them. The WDM functionality is designed for a large optical bandwidth complying with the wide spectral range in FTTH applications and also reducing the polarization dependence of the WDM-coupler. Lasing is achieved by forming facet-free, λ/4-shifted, DFB (distributed feedback laser) lasers emitting directly into the waveguide. The photodiodes are waveguide photo-diodes (WGPD). Our seamless technology is also able to array the single channel diplexers to 4 to 12 channel diplexer arrays with 250μm fiber port waveguide spacing to comply with fiber optic ribbons. This is an important feature in central office applications were small physical space is important.

Proceedings Article | 17 March 2005 Paper

Nitride facet passivation raises reliability, COMD, and enables high-temperature operation of InGaAsP, InGaAs, and InAlGaAs lasers

Christofer Silfvenius, Yanting Sun, Peter Blixt, Carsten Lindstroem, Alfred Feitisch

Proceedings Volume 5711, (2005) https://doi.org/10.1117/12.590358

KEYWORDS: Semiconductor lasers, Reliability, Aluminium gallium indium phosphide, Indium gallium arsenide, Nitrogen, Aluminum, High power lasers, Quantum wells, Laser crystals, Oxidation

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Proceedings Article | 1 June 2004 Paper

High-COMD nitridized InAlGaAs laser facets for high-reliability 50-W bar operation at 805 nm

Christofer Silfvenius, Peter Blixt, Carsten Lindstrom, Alfred Feitisch

Proceedings Volume 5336, (2004) https://doi.org/10.1117/12.544587

KEYWORDS: Nitrogen, Quantum wells, Aluminum, Indium gallium arsenide, Gallium arsenide, Semiconductor lasers, Reliability, Gallium, High power lasers, Coating

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