PROCEEDINGS ARTICLE | March 18, 2016
Proc. SPIE. 9731, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XV
KEYWORDS: Semiconductors, Second-harmonic generation, Crystals, Semiconductor materials, Scanning electron microscopy, Gallium nitride, Nonlinear optics, Infrared radiation, Harmonic generation, Metalorganic chemical vapor deposition, Nonlinear frequency conversion, Frequency conversion, Nonlinear crystals, Gallium, Optical semiconductors, Absorption
Gallium nitride’s (GaN) material properties of broadband transparency, high thermal conductivity, and wide-band gap make it a promising candidate for high-power frequency conversion devices. The strong internal polarization of GaN leads to large second-order nonlinearity, but conventional phase matching is prevented due to weak birefringence. To obtain efficient nonlinear optic frequency conversion, patterned inversion growth has been developed to induce quasiphase matching (QPM). We have fabricated and tested periodically oriented GaN (PO-GaN) devices to obtain QPM frequency conversion. This report discusses our recent measurements of second harmonic generation resonances for these devices.
