In evaluating the lithography road maps for the semiconductor industry, the continued development of techniques to extend the utility of optical methods through the 64- and 256- Megabit device generations seems assured. These developments will drive the printable feature size on 5X reticles to 1.25 micrometer. Other improvements, such as optical proximity and phase shift techniques, will require reticle feature sizes of less than 0.5 micrometer. As a result, feature linearity will become a critical mask parameter. This paper describes an evaluation of thin PBS resist films (less than 4000 angstrom) to improve feature linearity. In addition, the adaptation of the use of these thin resist films to a manufacturing environment is detailed. The discussion is centered on classical resist characteristics and the results obtained from the utilization of thinner resist structures in the manufacturing of photomasks.