Dr. Chris A. Spence Profile

Dr. Chris A. Spence

VP Advanced Technology Development at ASML

SPIE Involvement:

Author

Publications (55)

Proceedings Article | 10 April 2024 Presentation + Paper

EUV OPC modeling of dry photoresist system for pitch 32nm BEOL

Jyun-Ming Chen, David Rio, Maxence Delorme, Cyrus Tabery, Christoph Hennerkes, Chris Spence, Benjamin Kam, Mohand Brouri, Nader Shamma

Proceedings Volume 12953, 129530C (2024) https://doi.org/10.1117/12.3010402

KEYWORDS: Photoresist materials, Optical proximity correction, Calibration, Semiconducting wafers, Shrinkage, Printing, Scanning electron microscopy, Photoresist developing, Metals, Critical dimension metrology

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SPIE Journal Paper | 30 January 2024

Curvilinear data representation and its impact on file size and lithographic performance

Jiuning Hu, Adam Lyons, Chris Spence, Kurt Wampler, Mahmoud Mohsen, Yen-Wen Lu, Rachit Gupta, Youping Zhang, Rafael Howell, Jiyoon Chang, James Moon, Jun Ye

JM3, Vol. 23, Issue 01, 011204, (January 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.011204

KEYWORDS: Microchannel plates, Optical proximity correction, Lithography, Extreme ultraviolet, Deep ultraviolet, Solids, SRAF, Metals, Photovoltaics, Data storage

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Proceedings Article | 22 November 2023 Presentation

Resolution and patterning performance quantification using efficient e-beam metrology

Cyrus Tabery, Miao Wang, Victor Blanco Carballo, Eren Canga, Aiqin Jiang, Chris Spence, Tom Wallow

Proceedings Volume PC12750, PC127500B (2023) https://doi.org/10.1117/12.2688141

KEYWORDS: Electron beam lithography, Metrology, Design and modelling, Scanning laser ophthalmoscopy, Scanning electron microscopy, Line width roughness, Image enhancement, Failure analysis, Extreme ultraviolet, Etching

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Proceedings Article | 22 November 2023 Presentation

Probing EUV resist defect detectability using a SEM simulation framework

Thomas Wallow, Aiqin Jiang, Ton Kiers, Tim Houben, Chris Spence

Proceedings Volume PC12750, PC127500C (2023) https://doi.org/10.1117/12.2687837

KEYWORDS: Scanning electron microscopy, Defect detection, Extreme ultraviolet, Machine learning, Inspection

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Proceedings Article | 21 November 2023 Presentation + Paper

Mask error and its contribution to OPC model error for an EUV via layer

Adam Lyons, Tom Wallow, Chris Spence, Bríd Connolly, Christian Beurgel, Markus Bender

Proceedings Volume 12750, 127500E (2023) https://doi.org/10.1117/12.2687699

KEYWORDS: Optical proximity correction, Semiconducting wafers, Extreme ultraviolet, Data modeling, Calibration, Metrology, Finite element methods, Critical dimension metrology, Contour modeling, Computer simulations

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Proceedings Article | 28 April 2023 Presentation + Paper

Curvilinear data representation and its impact on file size and lithographic performance

Jiuning Hu, Adam Lyons, Chris Spence, Kurt Wampler, Mahmoud Mohsen, Yen-Wen Lu, Rachit Gupta, Youping Zhang, Rafael Howell, Jun Ye

Proceedings Volume 12495, 1249506 (2023) https://doi.org/10.1117/12.2658649

KEYWORDS: Optical proximity correction, Lithography, Extreme ultraviolet, Deep ultraviolet, Data storage

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Proceedings Article | 12 October 2021 Presentation + Paper

28nm-pitch Ru interconnects patterned with a 0.33NA-EUV single exposure

Sayantan Das, Nicola Kissoon, Mahmudul Hasan, Luc Rynders, Luka Kljucar, Sandip Halder, Philippe Leray, Mircea Dusa, David Rio, Mahmoud Mohsen, Chris Spence, Etienne De Poortere

Proceedings Volume 11854, 118540C (2021) https://doi.org/10.1117/12.2600937

KEYWORDS: Stochastic processes, Semiconducting wafers, Ruthenium, Inspection, Extreme ultraviolet lithography, Line edge roughness

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Proceedings Article | 26 February 2021 Presentation + Paper

Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations

Adam Lyons, Luke Long, Tom Wallow, Chris Spence, Ton Kiers, Paul van Adrichem, Vidya Vaenkatesan, Jiyou Fu, Christoph Hennerkes, Cyrus Tabery

Proceedings Volume 11609, 116090C (2021) https://doi.org/10.1117/12.2584744

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Proceedings Article | 22 February 2021 Presentation + Paper

Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations

D. Rio, P. Van Adrichem, M. Delorme, K. Lyakhova, C. Spence, J.-H. Franke

Proceedings Volume 11609, 116090T (2021) https://doi.org/10.1117/12.2583800

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Proceedings Article | 13 October 2020 Poster + Paper

Mask contribution to OPC model accuracy

Adam Lyons, Tom Wallow, Christoph Hennerkes, Chris Spence, Maxence Delorme, David Rio, Dai Tsunoda, Yohei Torigoe, Masakazu Hamaji

Proceedings Volume 11517, 115171D (2020) https://doi.org/10.1117/12.2573160

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Process modeling, Extreme ultraviolet, Semiconducting wafers, Metrology, Calibration, Finite element methods

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Proceedings Article | 3 October 2018 Presentation + Paper

EUV pupil optimization for 32nm pitch logic structures

D. Rio, V. Blanco, J.-H. Franke, W. Gillijns, M. Dusa, E. De Poortere, P. Van Adrichem, K. Lyakhova, C. Spence, E. Hendrickx, S. Biesemans, K. Nafus

Proceedings Volume 10809, 108090N (2018) https://doi.org/10.1117/12.2503321

KEYWORDS: Source mask optimization, Semiconducting wafers, Scanners, Logic, Extreme ultraviolet lithography, Reticles, Extreme ultraviolet

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Proceedings Article | 13 March 2018 Paper

EUV via hole pattern fidelity enhancement through novel resist and post-litho plasma treatment

Hidetami Yaegashi, Kyohei Koike, Carlos Fonseca, Fumiko Yamashita, Kumar Kaushik, Shinya Morikita, Kiyohito Ito, Shota Yoshimura, Vadim Timoshkov, Mark Maslow, Tae Kwon Jee, Liesbeth Reijnen, Peter Choi, Mu Feng, Chris Spence, Stijn Schoofs

Proceedings Volume 10586, 1058605 (2018) https://doi.org/10.1117/12.2297661

KEYWORDS: Extreme ultraviolet, Optical lithography, Plasma treatment, Stochastic processes, Extreme ultraviolet lithography, Photomasks, System on a chip, Lithography, Silica, Manufacturing

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Proceedings Article | 16 October 2017 Presentation + Paper

Manufacturing challenges for curvilinear masks

Chris Spence, Quan Zhang, Vincent Shu, Been-Der Chen, Stanislas Baron, Yasuko Saito, Masakazu Hamaji, Yasuaki Horima, Shuichiro Ohara

Proceedings Volume 10451, 1045104 (2017) https://doi.org/10.1117/12.2280470

KEYWORDS: Photomasks, Optical proximity correction, Lithography, SRAF, Mask making, Process modeling

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Proceedings Article | 28 April 2017 Presentation

CD-SEM metrology and OPC modeling for 2D patterning in advanced technology nodes (Conference Presentation)

Thomas Wallow, Chen Zhang, Anita Fumar-Pici, Jun Chen, Bart Laenens, Christopher Spence, David Rio, Paul van Adrichem, Harm Dillen, Jing Wang, Peng-Cheng Yang, Werner Gillijns, Patrick Jaenen, Frieda van Roey, Jeroen van de Kerkhove, Sergey Babin

Proceedings Volume 10145, 101451Q (2017) https://doi.org/10.1117/12.2260443

KEYWORDS: Metrology, Optical proximity correction, Data modeling, Optical lithography, Signal to noise ratio, OLE for process control, Instrument modeling, Image analysis, Calibration, Metals

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In the course of assessing OPC compact modeling capabilities and future requirements, we chose to investigate the interface between CD-SEM metrology methods and OPC modeling in some detail. Two linked observations motivated our study: 1) OPC modeling is, in principle, agnostic of metrology methods and best practice implementation. 2) Metrology teams across the industry use a wide variety of equipment, hardware settings, and image/data analysis methods to generate the large volumes of CD-SEM measurement data that are required for OPC in advanced technology nodes. Initial analyses led to the conclusion that many independent best practice metrology choices based on systematic study as well as accumulated institutional knowledge and experience can be reasonably made. Furthermore, these choices can result in substantial variations in measurement of otherwise identical model calibration and verification patterns. We will describe several experimental 2D test cases (i.e., metal, via/cut layers) that examine how systematic changes in metrology practice impact both the metrology data itself and the resulting full chip compact model behavior. Assessment of specific methodology choices will include: • CD-SEM hardware configurations and settings: these may range from SEM beam conditions (voltage, current, etc.,) to magnification, to frame integration optimizations that balance signal-to-noise vs. resist damage. • Image and measurement optimization: these may include choice of smoothing filters for noise suppression, threshold settings, etc. • Pattern measurement methodologies: these may include sampling strategies, CD- and contour- based approaches, and various strategies to optimize the measurement of complex 2D shapes. In addition, we will present conceptual frameworks and experimental methods that allow practitioners of OPC metrology to assess impacts of metrology best practice choices on model behavior. Finally, we will also assess requirements posed by node scaling on OPC model accuracy, and evaluate potential consequences for CD-SEM metrology capabilities and practices.

Proceedings Article | 28 March 2017 Presentation + Paper

Patterning control strategies for minimum edge placement error in logic devices

Jan Mulkens, Michael Hanna, Bram Slachter, Wim Tel, Michael Kubis, Mark Maslow, Chris Spence, Vadim Timoshkov

Proceedings Volume 10145, 1014505 (2017) https://doi.org/10.1117/12.2260155

KEYWORDS: Line edge roughness, Optical proximity correction, Optical lithography, Overlay metrology, Metrology, Lithography, Control systems, Extreme ultraviolet lithography, Extreme ultraviolet, Process control, Logic devices, Immersion lithography, Scanners, Semiconducting wafers, Critical dimension metrology, Line width roughness

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Proceedings Article | 15 March 2016 Paper

Computational process modeling and correction in a multi-patterning era

Chris Spence

Proceedings Volume 9780, 978005 (2016) https://doi.org/10.1117/12.2225456

KEYWORDS: Overlay metrology, Optical proximity correction, Etching, Metrology, Process modeling, Semiconducting wafers, Optical lithography, Photomasks, Lithography, Scanners

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Proceedings Article | 19 March 2015 Paper

A new paradigm for in-line detection and control of patterning defects

Stefan Hunsche, Marinus Jochemsen, Vivek Jain, Xinjian Zhou, Frank Chen, Venu Vellanki, Chris Spence, Sandip Halder, Dieter van den Heuvel, Vincent Truffert

Proceedings Volume 9424, 94241B (2015) https://doi.org/10.1117/12.2087178

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Scanners, Optical lithography, Metrology, Inspection, Critical dimension metrology, Reticles, Data modeling, Lithography

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Proceedings Article | 16 March 2009 Paper

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Martin Burkhardt, J. C. Arnold, Z. Baum, S. Burns, J. Chang, J. Chen, J. Cho, V. Dai, Y. Deng, S. Halle, G. Han, S. Holmes, D. Horak, S. Kanakasabapathy, R. H. Kim, A. Klatchko, C. S. Koay, A. Krasnoperova, Y. Ma, E. McLellan, K. Petrillo, S. Schmitz, C. Tabery, Y. Yin, L. Zhuang, Y. Zou, J. Kye, V. Paruchuri, S. Mansfield, C. Spence, M. Colburn

Proceedings Volume 7274, 727404 (2009) https://doi.org/10.1117/12.814433

KEYWORDS: Etching, Lithography, Printing, Optical lithography, Double patterning technology, Resolution enhancement technologies, Logic, Metals, Photomasks, Tolerancing

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Proceedings Article | 13 March 2009 Paper

Computational requirements for OPC

Chris Spence, Scott Goad

Proceedings Volume 7275, 72750U (2009) https://doi.org/10.1117/12.813522

KEYWORDS: Optical proximity correction, Photomasks, Computer simulations, Etching, Resolution enhancement technologies, Lithography, Statistical modeling, SRAF, Computer hardware, Optical lithography

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Proceedings Article | 16 November 2007 Paper

Use of layout automation and design-based metrology for defect test mask design and verification

Chris Spence, Cyrus Tabery, Andre Poock, Arndt Duerr, Thomas Witte, Jan Fiebig, Jan Heumann

Proceedings Volume 6730, 67300P (2007) https://doi.org/10.1117/12.746953

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Reticles, Optical proximity correction, Metrology, Environmental sensing, Wafer inspection, Critical dimension metrology, Defect detection

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Proceedings Article | 20 October 2006 Paper

Wafer fab mask qualification techniques and limitations

Andre Poock, Stephanie Maelzer, Chris Spence, Cyrus Tabery, Michael Lang, Guido Schnasse, Milko Peikert, Kaustuve Bhattacharyya

Proceedings Volume 6349, 63490U (2006) https://doi.org/10.1117/12.692525

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Reticles, Defect inspection, Defect detection, Wafer testing, Printing, Image resolution

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Proceedings Article | 21 June 2006 Paper

Mask data volume: historical perspective and future requirements

Chris Spence, Scott Goad, Peter Buck, Richard Gladhill, Russell Cinque, Jürgen Preuninger, Üwe Griesinger, Martin Blöcker

Proceedings Volume 6281, 62810H (2006) https://doi.org/10.1117/12.692639

KEYWORDS: Optical proximity correction, Photomasks, Vestigial sideband modulation, Logic, SRAF, Reticles, Resolution enhancement technologies, Manufacturing, Metals, Data storage

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Proceedings Article | 5 November 2005 Paper

Mask data volume: explosion or damp squib?

Chris Spence, Scott Goad, Peter Buck, Richard Gladhill, Russell Cinque

Proceedings Volume 5992, 599211 (2005) https://doi.org/10.1117/12.629369

KEYWORDS: Photomasks, Optical proximity correction, Vestigial sideband modulation, Resolution enhancement technologies, SRAF, Metals, Manufacturing, Logic, Reticles, Data storage

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Proceedings Article | 6 May 2005 Paper

Full-chip lithography simulation and design analysis: how OPC is changing IC design

Chris Spence

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.608020

KEYWORDS: Optical proximity correction, Photomasks, Data modeling, Lithography, Manufacturing, Mask making, Critical dimension metrology, Electronic design automation, Resolution enhancement technologies, Semiconducting wafers

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Proceedings Article | 17 December 2003 Paper

Influence of antireflection coatings in ArF lithography

Bruno La Fontaine, Adam Pawloski, Alden Acheta, Yunfei Deng, Harry Levinson, Christopher Spence, Christian Chovino, Laurent Dieu, Eric Johnstone, Franklin Kalk

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518220

KEYWORDS: Reticles, Semiconducting wafers, Lithography, Modulation transfer functions, Reflectivity, Spatial frequencies, Critical dimension metrology, Chromium, Antireflective coatings, Scanners

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Proceedings Article | 26 June 2003 Paper

ACLV-analysis in production and its impact on product performance

Rolf Seltmann, Rolf Stephan, Martin Mazur, Christopher Spence, Bruno La Fontaine, Dirk Stankowski, Andre Poock, Wolfram Grundke

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485337

KEYWORDS: Scanners, Reticles, Manufacturing, Semiconducting wafers, Critical dimension metrology, Optical filters, Contamination, Modulation transfer functions, Logic, Etching

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Proceedings Article | 27 December 2002 Paper

Comparison of DUV wafer and reticle lithography: What is the resolution limit?

Chris Spence, Cyrus Tabery, Gerald Cantrell, Leslie Dahl, Peter Buck, William Wilkinson

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468094

KEYWORDS: Semiconducting wafers, Photomasks, Reticles, Image processing, Lithography, Etching, Photoresist processing, Absorption, Reflectivity, Optical proximity correction

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Proceedings Article | 11 March 2002 Paper

ArF (193-nm) alternating aperture PSM quartz defect repair and printability for 100-nm node

Jerry Chen, John Riddick, Matt Lamantia, Azeddine Zerrade, Robert Henderson, Greg Hughes, Cyrus Tabery, Khoi Phan, Chris Spence, Amy Winder, William Stanton, Eugene Delarosa, John Maltabes, Cecilia Philbin, Lloyd Litt, Anthony Vacca, Scott Pomeroy

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458362

KEYWORDS: Quartz, Photomasks, Semiconducting wafers, Scanning electron microscopy, Etching, Atomic force microscopy, Ions, Reticles, Inspection, Critical dimension metrology

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Proceedings Article | 14 September 2001 Paper

Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at lambda=193nm

Cyrus Tabery, Chris Spence

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435743

KEYWORDS: Photomasks, Etching, Quartz, Solids, Cadmium, Error analysis, Phase shifts, Critical dimension metrology, Lithography, Phase shifting

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Proceedings Article | 14 September 2001 Paper

Automatic defect severity scoring for 193-nm reticle defect inspection

Linard Karklin, Mark Altamirano, Lynn Cai, Khoi Phan, Chris Spence

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435716

KEYWORDS: Photomasks, Reticles, Lithography, Inspection, Optical proximity correction, Semiconducting wafers, Virtual reality, Resolution enhancement technologies, Decision support systems, Critical dimension metrology

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Proceedings Article | 14 September 2001 Paper

Resolution capability and the mask error enhancement function (MEEF) for ArF and KrF lithography

Marina Plat, Chris Spence, Christopher Lyons, Amada Wilkison

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435785

KEYWORDS: Photomasks, Critical dimension metrology, Lithography, Photoresist processing, Binary data, Monochromatic aberrations, Scanners, Optical proximity correction, Polymers, Etching

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Proceedings Article | 5 September 2001 Paper

Enhanced dispositioning of reticle defects using the Virtual Stepper with automated defect severity scoring

Lynn Cai, Khoi Phan, Chris Spence, Linyong Pang, Kevin Chan

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438388

KEYWORDS: Semiconducting wafers, Photomasks, Reticles, Virtual reality, Scanning electron microscopy, Decision support systems, Critical dimension metrology, Optical proximity correction, Inspection, Tolerancing

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Proceedings Article | 22 January 2001 Paper

Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-um design rule with binary OPC/SB mask

Khoi Phan, Chris Spence, John Riddick, Jerry Chen, Matt Lamantia, Hugo Villa

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410693

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Inspection, Scanning electron microscopy, Optical proximity correction, Binary data, Printing, 193nm lithography, Defect detection

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Proceedings Article | 19 July 2000 Paper

Integration of optical proximity correction strategies in strong phase-shifter design for polygate layers

Chris Spence, Marina Plat, Emile Sahouria, Nicolas Cobb, Franklin Schellenberg

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392102

KEYWORDS: Optical proximity correction, Photomasks, Model-based design, Semiconducting wafers, Phase shifts, Distortion, Binary data, Transistors, Visualization, Logic

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Proceedings Article | 5 July 2000 Paper

Impact of optical enhancement techniques on the mask error enhancement function (MEEF)

Marina Plat, Khanh Nguyen, Chris Spence, Christopher Lyons, Amada Wilkison

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389009

KEYWORDS: Photomasks, Binary data, Critical dimension metrology, Reticles, Image enhancement, Semiconducting wafers, Cadmium, Optical lithography, Image quality, Optical proximity correction

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Proceedings Article | 5 July 2000 Paper

Effect of real masks on wafer patterning

Chris Spence, Ramkumar Subramanian, David Teng, Ernesto Gallardo

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389052

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Optical lithography, Cadmium, Reticles, Metrology, Image processing, Scanning electron microscopy, Detection and tracking algorithms

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Proceedings Article | 2 June 2000 Paper

Defect printability for sub-0.18-micron design rules using 193-nm lithography process and binary OPC reticle

Khoi Phan, Chris Spence, Jeff Schefske, Uzodinma Okoroanyanwu, Harry Levinson

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386536

KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Lithography, Scanning electron microscopy, 193nm lithography, Binary data, Optical proximity correction, Antimony, Scanners

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Proceedings Article | 30 December 1999 Paper

Integration of optical proximity correction strategies in strong phase shifters design for poly-gate layers

Chris Spence, Marina Plat, Emile Sahouria, Nicolas Cobb, Franklin Schellenberg

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373322

KEYWORDS: Optical proximity correction, Photomasks, Model-based design, Phase shifts, Semiconducting wafers, Distortion, Transistors, Binary data, Computer aided design, Data modeling

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Proceedings Article | 30 December 1999 Paper

Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system

Khoi Phan, Chris Spence, S. Dakshina-Murthy, Vidya Bala, Alvina Williams, Steve Strener, Richard Eandi, Junling Li, Linard Karklin

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373301

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Scanning electron microscopy, Inspection, Optical proximity correction, Binary data, Photoresist processing, Microscopes, Lithography

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Proceedings Article | 26 July 1999 Paper

Extending the limits of i-line lithography for via layers and minimization of dense-iso bias

Ramkumar Subramanian, Chris Spence, Luigi Capodieci, Thomas Werner, Ernesto Gallardo

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354409

KEYWORDS: Photomasks, Lithography, Printing, Binary data, Semiconducting wafers, Optical lithography, Deep ultraviolet, Scanning electron microscopy, Phase shifts, Dielectrics

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Proceedings Article | 26 July 1999 Paper

CD uniformity consideration for DUV step and scan tools

Rolf Seltmann, Anna Maria Minvielle, Chris Spence, Sven Muehle, Luigi Capodieci, Khanh Nguyen

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354337

KEYWORDS: Reticles, Semiconducting wafers, Scanners, Cadmium, Monochromatic aberrations, Deep ultraviolet, Critical dimension metrology, Photomasks, Photoresist processing, Manufacturing

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Proceedings Article | 4 September 1998 Paper

Sub-100-nm and deep sub-100-nm MOS transistor gate patterning

Qi Xiang, Subash Gupta, Chris Spence, Bhanwar Singh, Geoffrey Yeap, Ming-Ren Lin

Proceedings Volume 3506, (1998) https://doi.org/10.1117/12.323977

KEYWORDS: Etching, Transistors, Oxides, Optical lithography, Metrology, Scanning electron microscopy, Lithography, Molybdenum, Deep ultraviolet, Photoresist materials

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Proceedings Article | 1 September 1998 Paper

Detection of 60-deg phase defects on alternating PSMs

Chris Spence, David Emery, Larry Zurbrick, Durai Prakash, X. Chang, Steve Khanna, Brent Leback, Eiji Tsujimoto, Greg Hughes, Baorui Yang

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328859

KEYWORDS: Inspection, Reticles, Photomasks, Deep ultraviolet, Detection and tracking algorithms, Algorithm development, Defect detection, Phase shifts, Semiconducting wafers, Etching

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Proceedings Article | 29 June 1998 Paper

Impact of coma on CD control for multiphase PSM designs

Regina Schmidt, Chris Spence, Luigi Capodieci, Zoran Krivokapic, Bernd Geh, Donis Flagello

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310750

KEYWORDS: Monochromatic aberrations, Critical dimension metrology, Cadmium, Reticles, Phase shifts, Etching, Photomasks, Semiconducting wafers, Binary data, Profilometers

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Proceedings Article | 7 July 1997 Paper

Process latitude and CD bias evaluation of attenuated PSM

Regina Schmidt, Chris Spence

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275971

KEYWORDS: Critical dimension metrology, Printing, Photomasks, Semiconducting wafers, Scanning electron microscopy, Binary data, Photoresist processing, Inspection

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Proceedings Article | 7 July 1997 Paper

Phase shifting and optical proximity corrections to improve CD control on logic devices in manufacturing for sub-0.35-um i-line

Paul Ackmann, Stuart Brown, John Nistler, Chris Spence

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276034

KEYWORDS: Manufacturing, Critical dimension metrology, Phase shifting, Optical proximity correction, Control systems, Logic devices, Optics manufacturing, Binary data, Phase shifts, Switches

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Proceedings Article | 12 February 1997 Open Access

Detection of submicron phase defects on multiphase random logic reticles

Chris Spence, John Nistler, William Arnold, David Emery, Larry Zurbrick, Durai Prakash, X. Chang, Steve Khanna, Brent Leback, Eiji Tsujimoto, Greg Hughes

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301195

KEYWORDS: Inspection, Reticles, Detection and tracking algorithms, Photomasks, Deep ultraviolet, Etching, Phase shift keying, Algorithm development, Defect detection, Phase shifts

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Proceedings Article | 3 November 1994 Paper

Large-area optical design rule checker for logic PSM application

John Nistler, Chris Spence, Eytan Barouch, Uwe Hollerbach

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191965

KEYWORDS: Photomasks, Computer aided design, Optical design, Image processing, Logic, Databases, X-ray technology, Logic devices, Algorithm development, Computing systems

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Proceedings Article | 17 May 1994 Paper

Automated determination of CAD layout failures through focus: experiment and simulation

Chris Spence, John Nistler, Eytan Barouch, Uwe Hollerbach, Steven Orszag

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175424

KEYWORDS: Computer aided design, Tolerancing, Deep ultraviolet, Computer simulations, Scanning electron microscopy, Photomasks, Optical design, Image enhancement, Optical proximity correction, Lithography

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Proceedings Article | 1 June 1992 Paper

Using multiple focal planes to enhance depth of focus

Chris Spence, Daniel Cole, Barbara Peck

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130328

KEYWORDS: Optical lithography, Tolerancing, Printing, Semiconducting wafers, Photomasks, Scanning electron microscopy, Chlorine, Adaptive optics, Monochromatic aberrations, Nano opto mechanical systems

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Proceedings Article | 1 June 1992 Paper

Single-level electric testsites for phase-shifting masks

Burn Lin, Donald Samuels, Chris Spence

Proceedings Volume 1673, (1992) https://doi.org/10.1117/12.59795

KEYWORDS: Photomasks, Phase shifts, Opacity, Phase shifting, Inspection, Integrated circuits, Metrology, Process control, Reticles, Lithography

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Proceedings Article | 1 June 1991 Paper

Study of silylation mechanisms and kinetics through variations in silylating agent and resin

T. Dao, Chris Spence, Dennis Hess

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46377

KEYWORDS: Silicon, FT-IR spectroscopy, Crystals, Nitrogen, Quartz, Polymers, Head-mounted displays, Molecules, Absorbance, Photoresist processing

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Proceedings Article | 1 June 1991 Paper

Some experimental techniques for characterizing photoresists

Chris Spence, Richard Ferguson

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46381

KEYWORDS: Data modeling, Absorption, Data acquisition, Silicon, Transmittance, Semiconducting wafers, Reflectivity, FT-IR spectroscopy, Photoresist materials, Chemical reactions

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Proceedings Article | 1 June 1990 Paper

Silylation of poly (t-BOC) styrene resists: performance and mechanisms

Chris Spence, Scott MacDonald, Hubert Schlosser

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20097

KEYWORDS: Silicon, Silicon films, Etching, Head-mounted displays, Polymers, FT-IR spectroscopy, Diffusion, Reactive ion etching, Semiconducting wafers, Absorption

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Proceedings Article | 1 June 1990 Paper

Investigation of the exposure and bake of a positive acting resist with chemical amplification

Richard Ferguson, Chris Spence, Elsa Reichmanis, Larry Thompson, Andrew Neureuther

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20086

KEYWORDS: Absorption, Chemical reactions, Absorbance, FT-IR spectroscopy, Data modeling, Temperature metrology, Industrial chemicals, Deep ultraviolet, Transmittance, Photoresist processing

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Showing 5 of 55 publications

Conference Committee Involvement (3)

Photomask Technology

15 September 2009 | Monterey, California, United States

Photomask Technology

7 October 2008 | Monterey, California, United States

Photomask Technology

18 September 2007 | Monterey, California, United States

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