When the Coulomb interaction becomes strong in semiconductors, the electrons and holes can interact to form excitonic states, which govern the materials’ optical properties. In atomically thin transition metal dichalcogenide (TMD) devices encapsulated by boron nitride, we observe various excitonic states with distinctive spin and valley configurations, including the bright and dark excitons, and intra- and inter-valley excitons. These excitons exhibit complex interactions with photons and phonons, giving rise to a panoply of emission lines. We have tailored the excitonic properties by using the charge density, magnetic field, and moiré potential. These novel excitonic states with adjustable properties hold promises for the development of next-generation excitonic devices.
Atomically thin transition-metal dichalcogenide (TMD) semiconductors possess strong Coulomb interactions due to reduced dielectric screening, leading to the formation of excitons with exceptionally large binding energies. The enhanced stability of excitons in these materials provides a unique platform to investigate excitonic interactions at room temperature and to examine the role of plasma effects and excitonic interactions over a broad range of excitation densities.
We report an excitation-density dependent crossover between two regimes: Using ultrafast absorption spectroscopy, we observe a pronounced red shift of the exciton resonance followed by an anomalous blue shift with increasing excitation density. Using both material-realistic computation and phenomenological modeling, we attribute this observation to long-range Coulomb interaction in the presence of plasma screening in an attraction-repulsion crossover with the short-ranged exciton-exciton interaction that mimics the Lennard-Jones potential between atoms, suggesting a strong analogy between excitons and atoms in respect of inter-particle interaction.
Our findings underline the important role of many-particle renormalizations and screening due to excited carriers in the device-relevant regime of optically or electrically excited TMDs.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.