An anti-reflection (AR) coating system was inserted between the anode (ITO) and the glass substrate in the red light
organic electroluminescent devices (OLED) for the structure being K9/ITO/NPB (60nm)/DCJTB (0.3nm)/Alq<sub>3</sub> (60nm)/
LiF(0.3nm)/Al. The AR film system structure was K9/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/2-ITO, and the optical thicknesses of TiO<sub>2 </sub>and Al<sub>2</sub>O<sub>3</sub>
coatings were also quarter wave length. The results indicated that the maximum transmissivity of AR coating was by
95 %( 610nm); it increased by 8% compared with only using ITO as AR coating. The average luminance increased by
about 30%, the average energy efficiency increased by about 60%, while reducing the threshold voltage of the devices.
The processing is simple and high efficient, and can change AR coating structure according to the OLED device
different emission wavelength, therefore, can be widely applied to the OLED devices.
The thin aluminum nitride(AlN) film using as an insulating layer was inserted between the anode (ITO) and the NPB
organic film in the organic light-emitting devices(OLED) for the structure being K9/ITO/AlN/NPB/Alq<sub>3</sub>/LiF/Al.The
effect of the different thickness AlN film on the device performance was investigated. After optimization, improvement
of OLEDs properties is biggest when the AlN film thickness is about 0.4nm.Such a structure with AlN layer facilitates
the increase of current density and decrease of threshold voltage, resulting in an improved luminance and energy
efficiency. The average luminance increased by about 30% and an improvement of 21.8% on the average current density.
The lifetime experiment of the devices has proved an improvement on stability because of inserted AlN film. This
phenomenon is mainly because of the insulating capability of the aluminum nitride coating and the passivation role of
AlN film to the ITO surface. The processing is simple and high efficient, can be widely applied to the OLED devices.
Hydrogen (H<sub>2</sub>) and Argon (Ar) plasma passivation technology was investigated to improve the optical properties of the
III-V laser diodes. The main experiment was carried out in the vacuum chamber of the magnetron sputtering system. At
first, H<sub>2</sub> and Ar plasma passivation treatment was performed on the GaAs (110) surfaces. The obtained optimum
passivation conditions were 65-W radio frequency (RF) of power and 15-min duration, the flow of hydrogen and argon
were also 20 sccm.The effect of passivation was characterized by photoluminescence (PL) measurements,the PL
intensity of GaAs(110) after passivating was about 10 times of that the unpassivated samples. And then the laser cavity
surfaces were treated under the optimum passivation conditions.Consequently,compared with the unpassivated lasers
with only AR/HR-coatings, the catastrophic optical damage (COD) threshold value of the passivated lasers by H<sub>2</sub> and Ar
plasma treatment was increased by 30 per cent.In the 20 ~ 80°C temperature range, characteristic temperature value of
128K was incresed by 11.3 per cent.The processing is simple and high efficient, can be widely applied to the III-V laser
GaAs films have been deposited on substrates of quartz glass by radio frequency magnetron sputtering technique in the atmosphere with or without hydrogen. The GaAs and hydrogen doped GaAs thin films have been studied by X-ray diffraction, scanning electron microscopy. Moreover radial distribution function and pair correlation function
analysis method have been established in order to analyze microstructure further. The as-deposited films are
amorphous at room temperature. The distances between the first neighboring atoms of a-GaAs:H don't change compared
with a-GaAs:H. But Hydrogen restrains reuniting of crystal grain while sputtering and short range regular domains of
a-GaAs:H are smaller than that of a-GaAs. In addition, the morphology of GaAs films is coarser than that of GaAs:H
thin film. The content of hydrogen and the various types of hydrogen bonding have been investigated using Fourier
transform infrared absorption spectroscope.
Hydrogenated amorphous silicon (a-Si:H) thin films have been prepared by DC magnetron sputtering, and the effect of
sputtering power, the hydrogen flow rate on deposition rate and the optical properties of a-Si:H thin films have been
investigated. The hydrogen content (C<sub>H</sub>) of the films was calculated by Fourier transform infrared (FTIR) spectroscopy
method, the maximum C<sub>H</sub> was obtained at 11at. %,and a bandgap of a-Si:H thin films was changed from 1.43 to 2.25 eV
with different C<sub>H</sub>. It was found that the refractive index (n) and extinction coefficient (k) of the prepared films decreased
with the increase of C<sub>H</sub>. The results provided experimental basis for preparing a-Si:H thin films with special performance and structure .
In this paper, we have designed a laser structure with separate confinement single quantum well (SCH-SQW )and have grown the laser structure by MOCVD .Moreover we have also fabricated broad area structure .The lasers are cleaved into bars and coated with high and low reflectivity films (approximate 95% and 5%).The measured results of the device show that its threshold current is 1.95A ,The CW output power is 2W ,and the peak wavelength of the device is 910nm±2nm .