In this paper, a boron-doped poly-Si crystallized by solution-based metal induced (S-MIC) as the anode of
organic light emitting diode (OLED) was studied. The semi-transparent and semi-reflective anode of OLED
systemized with the high reflectivity of Al cathode could form a micro-cavity structure with a low Q to
improve the efficiency. The maximum luminance efficiency of red OLED made by Alq3: DCJTB (1.5wt %)( 30nm)
with the poly-Si anode is 2.66cd/A, higher than that of the OLED with the ITO anodes by 30%. In order to
improve the device performance, some key to optimize the character of MIC poly-Si thin film are analyzed
theoretically. A new kind of TFT/OLED coupling structure in AMOLED was proposed, in which the pixel
electrode of OLED was made by the same poly-Si thin film with its driver TFT's drain electrode. So that this
coupling structure will simplify the AMOLED processes flow.
In the evaluation of surface roughness by computer vision technique, the pattern of illumination is generally correlated
with optical surface finish parameters from the images. So this paper carried out experiments to investigate the effects of
various factors and completed the optimum design of capture condition. Then we captured abundant sample images
under appropriate experimental condition and chose to extract features of surface roughness in the spatial frequency
domain which should be less sensitive to noise than spatial domain features. Therefore, artificial neural network (ANN),
which took frequency-domain roughness features as the input, was developed to determine surface roughness by
selecting the back-propagation algorithm. The built ANNs using these critical sets of inputs showed low deviation from
the training data, low deviation from the testing data and high sensibility to the inputs levels. And the high prediction
accuracy of the developed ANNs was confirmed by the good agreement with the results from traditional stylus method.
Hence the proposed roughness features and neural network were efficient and effective for automated assessment of
Research on the fabrication of μc-Si used as the active layer of TFT and the incubation-layer of μc-Si is presented in this paper. VHF-PECVD is used to fabricate μc-Si film since the μc-Si can be fabricated with a higher growth rate than RF-PECVD. The amorphous incubation-layer between the substrate and the μc-Si layer can be thinned effectively by increasing hydrogen dilution. In addition, to obtain good TFT performance, the growth rate should be appropriate resulting in relative large grain size.