Prof. Colin J. Humphreys Profile

Prof. Colin J. Humphreys

Goldsmiths' Professor of Materials Science at UNIVERSITY OF CAMBRIDGE

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 10 March 2020 Presentation

Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)

Matthew Halsall, Iain Crowe, Rachel Oliver, Menno Kappers, Colin Humphreys

Proceedings Volume 11280, 112800Q (2020) https://doi.org/10.1117/12.2546446

KEYWORDS: Reflectivity, Quantum wells, Quantum efficiency, Laser beam diagnostics, Internal quantum efficiency, Light emitting diodes, Luminescence, Diffraction, Optical testing, Carrier dynamics

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Proceedings Article | 23 February 2018 Presentation + Paper

Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties

F. Massabuau, P. Chen, S. Rhode, M. Horton, T. O'Hanlon, A. Kovács, M. Zielinski, M. Kappers, R. Dunin-Borkowski, C. Humphreys, R. Oliver

Proceedings Volume 10532, 105320R (2018) https://doi.org/10.1117/12.2288211

KEYWORDS: Indium gallium nitride, Optical properties, Atomic force microscopy, Transmission electron microscopy, Microscopes, Defect inspection, Scanning electron microscopy

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Proceedings Article | 22 February 2017 Presentation + Paper

Single-step manufacturing process for the production of graphene-V/III LED heterostructures

Ivor Guiney, Simon Thomas, Colin Humphreys

Proceedings Volume 10124, 101240D (2017) https://doi.org/10.1117/12.2250166

KEYWORDS: Light emitting diodes, Graphene, Gallium nitride, Manufacturing, Contamination, Copper, Resistance, Chemical vapor deposition, Silicon, Etching

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Proceedings Article | 8 March 2016 Paper

Development of semipolar (11-22) LEDs on GaN templates

B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O'Mahony, M. Akhter, S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. Humphreys, F. Brunner, M. Weyers, T. Meyer, L. Lymperakis

Proceedings Volume 9768, 97681G (2016) https://doi.org/10.1117/12.2204758

KEYWORDS: Light emitting diodes, Gallium nitride, Visible radiation, Sapphire, Chemical mechanical planarization, Surface finishing, Quantum wells, Semiconducting wafers, Polarization, Indium, Indium gallium nitride

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SPIE Journal Paper | 7 March 2016 Open Access

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Ionut Gîrgel, Paul Edwards, Emmanuel Le Boulbar, Pierre-Marie Coulon, Suman Lata Sahonta, Duncan Allsopp, Robert Martin, Colin Humphreys, Philip Shields

JNP, Vol. 10, Issue 01, 016010, (March 2016) https://doi.org/10.1117/12.10.1117/1.JNP.10.016010

KEYWORDS: Indium gallium nitride, Gallium nitride, Indium nitride, Indium, Scanning electron microscopy, Crystals, Transmission electron microscopy, Light emitting diodes, Quantum wells, Diffusion

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Proceedings Article | 27 March 2013 Paper

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

M. Meneghini, N. Trivellin, M. Berti, T. Cesca, A. Gasparotto, A. Vinattieri, F. Bogani, D. Zhu, C. Humphreys, G. Meneghesso, E. Zanoni

Proceedings Volume 8625, 86251P (2013) https://doi.org/10.1117/12.2003542

KEYWORDS: Annealing, Luminescence, Light emitting diodes, Magnesium, Temperature metrology, Gallium nitride, Crystals, Statistical analysis, Ions, Mass spectrometry

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Proceedings Article | 3 February 2009 Paper

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

D. Zhu, C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers, W. A. Phillips, P. Lane, D. J. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, C. J. Humphreys

Proceedings Volume 7231, 723118 (2009) https://doi.org/10.1117/12.814919

KEYWORDS: Semiconducting wafers, Silicon, Gallium nitride, Light emitting diodes, Temperature metrology, Aluminum nitride, Electroluminescence, Reflectivity, Transmission electron microscopy, Quantum wells

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Proceedings Article | 26 September 2007 Paper

Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications

D. Zhu, B. Corbett, B. Roycroft, P. Maaskant, C. McAleese, M. Akhter, M. Kappers, C. Humphreys

Proceedings Volume 6797, 67970O (2007) https://doi.org/10.1117/12.758799

KEYWORDS: Light emitting diodes, Quantum wells, Near ultraviolet, Gallium nitride, Mirrors, Sapphire, Metals, Reflectivity, Optical resonators, Solid state lighting

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Proceedings Article | 13 April 2005 Paper

Time-resolved dynamics in single InGaN quantum dots

Robert Taylor, James Robinson, James Rice, Kwan Lee, Anas Jarjour, Jong Na, Shazia Yasin, Rachel Oliver, Menno Kappers, Colin Humphreys, G. Andrew Briggs, David Williams, Eoin O'Reilly, Aleksey Andreev, Yasuhiko Arakawa

Proceedings Volume 5725, (2005) https://doi.org/10.1117/12.583431

KEYWORDS: Indium gallium nitride, Excitons, Quantum dots, Electrons, Luminescence, Solids, Temperature metrology, Data modeling, Gallium nitride, Quantum wells

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Showing 5 of 9 publications

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