In this paper we theoretically study the responsivity of Metal-Insulator-Metal nanostructures to light illumination over a broad wavelength band (1 - 25 microns) and we examine the role of a local field enhancement and electrostatic field on the responsivity.
We present experimental results of second harmonic generation enhancement through the resonance of the band edge in a photonic crystal based on lithium niobate. Proton exchange technique was used to fabricate a waveguide near the surface of the lithium niobate substrate. The photonic crystal structure over the waveguide was made by UV laser interferometry. Subsequently experiments were designed to quantify the Cerenkov second-harmonic generation (CSHG) radiated into the substrate. The SHG radiated inside the waveguides was also experimentally investigated. In our experiments, the second guided mode of the waveguide was tuned to the band edge resonance to enhance the second harmonic generation. The highest conversion efficiency of CSHG using photonic band gap (PBG) was around 50 times compared to SHG emission from non-patterned lithium niobate. A numerical model was used to corroborate the experimental result. It was also found that the SHG signal in the waveguides is quenched compared to the CSHG signal.
A new free-space multistage optical interconnection network which is called the Comega interconnection network is presented. It has the same topological construction for the cascade stages of the Comega interconnection. The concept of the left Comega and the right Comega interconnection networks are given to describe the whole Comega interconnection network. The matrix theory for the Comega interconnection network is presented. The route controlling of the Comega interconnection network is decided based on the matrix analysis. The node switching states in cascade stages of the 8 by 8 Comega interconnection network for the route selection are given. The data communications between arbitrary input channel with arbitrary output channel can be performed easily.
An optoelectronic switching network with 2-D optical fiber bundle arrays I/O access device is presented in this paper. An optoelectronic recirculating Banyan network based on CMOS/SEED smart pixel device is used in this configuration. Thirty-two X two single-mode fiber bundle array and 32 X 2 multi- mode fiber bundle array are fabricated respectively based on the features of high density, high precision and array permutation of the CMOS/SEED optoelectronic integrated devices. The measuring results show that the center to center spacing between adjacent optical fibers in the same layer of the fiber array is 125 micrometer, and the spacing between adjacent layers is 500 micrometer. Displacing tolerance of the fiber bundle arrays is less than 2 micrometer and the angular tilt error is less than 0.02 degree.
A 16 X 16 Crossover photonic switching network with hybrid integrated CMOS/SEED smart pixel device and 2D optical fiber bundle array I/O access device is reported in this paper. SEEd array devices ar used as light receivers and transmitters, while CMOS devices make efficient logical processing. 4 X 40 2D multilayer optical fiber bundle arrays are fabricated and are used as I/O access devices in the crossover photonic switching network. The center to center spacing between adjacent optical fibers in the same layer of the fiber array is 125micrometers , and the spacing between adjacent layers is 250micrometers . Displacing tolerance of the fiber bundle arrays is less than 4 micrometers and the angular tilt error is less than 0.03 degree. It has the feature of high density, high precision, array permutation and easy to couple with 2D CMOS/SEED smart pixel device.
Conference Committee Involvement (1)
Optomechatronic Sensors and Instrumentation IV
18 November 2008 | San Diego, California, United States