The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the RPCVD process for GaN over more conventional deposition methods (such as MOCVD), which are realized through a lower growth temperature, compatibility with glass substrates, in addition to silicon and sapphire, and the complete elimination of toxic NH<sub>3</sub> from the growth process will be presented. These advantages will be discussed via analysis of X-Ray diffraction, Scanning Electron Microscopy (SEM) and Optical Transmission Spectroscopy characterization methods of samples grown using the RPCVD process. In addition, subsequent downstream device processing of double heterojunction devices grown on glass and sapphire substrates will be discussed.