Dr. Cornel Bozdog Profile

Dr. Cornel Bozdog

at Onto Innovation

SPIE Involvement:

Conference Program Committee | Author

Area of Expertise:

Metrology , Scatterometry , Spectroscopy , Optical profiling , Modeling , Algorithms

Websites:

Company Website

Publications (28)

Proceedings Article | 16 September 2022 Paper

Paper

High-NA EUV photoresist metrology using high-throughput scanning probe microscopy

M. Mucientes, D. De Simone, A.-L. Charley, P. Leray, M. van Reijzen, C. Bozdog, H. Sadeghian, A. Khachaturiants, R. Trussell, A. Kalinin, Y. Guo, E. Simons, S. Kim, O. Nadyarnykh, A. Moussa, J. Bogdanowicz, J. Severi, G. Lorusso

Proceedings Volume 12325, 123250M (2022) https://doi.org/10.1117/12.2641698

KEYWORDS: Scanning probe microscopy, Semiconducting wafers, Metrology, Optical lithography, Bridges, Extreme ultraviolet lithography, Defect inspection, Photoresist materials, Inspection, Atomic force microscopy

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Proceedings Article | 13 June 2022 Presentation

Presentation

High throughput scanning probe metrology for high-NA EUV photoresist profiling

Cornel Bozdog, Artem Khatchaturiants, Arseniy Kalinin, Yan Guo, Maarten van Reijzen, Hamed Sadeghian, Alain Moussa, Janusz Bogdanowicz, Joren Severi, Gian Lorusso, Danilo De Simone, Anne-Laure Charley, Philippe Leray, Seokhan Kim, Marta Mucientes

Proceedings Volume PC12053, PC120530I (2022) https://doi.org/10.1117/12.2616089

KEYWORDS: Scanning probe microscopy, Metrology, Photoresist materials, Extreme ultraviolet lithography, Scanning probe metrology, Profiling, Process control, Extreme ultraviolet, Atomic force microscopy, Stochastic processes

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Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

Subsurface scanning probe metrology for overlay through opaque layers

C. Bozdog, I. Battisti, K. Makles, J. Bogdanowicz, A. Moussa, V. Blanco, F. Yasin, D. Crotti, A.-L. Charley, P. Leray, M. van Reijzen, H. Sadeghian, M. S. Mucientes, E. Simons, Y. Guo

Proceedings Volume 12053, 1205310 (2022) https://doi.org/10.1117/12.2616093

KEYWORDS: Overlay metrology, Semiconducting wafers, Opacity, Atomic force microscopy, Scanning probe metrology, Image resolution, Pixel resolution, Photomasks

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Novel diffraction-based overlay metrology utilizing phase-based overlay for improved robustness

Ewoud van West, Richard Housley, Masazumi Matsunobu, Brian Watson, Maurits van der Schaar, Murat Bozkurt, Masudur al Arif, Paul Turner, Ping Olson, Alan Khan, Simon Strom, Elliott McNamara, Steve McCandless, Olger Zwier, Pieter Kapel, Justin Lim, Toshiharu Nishiyama, Michio Inoue, Cornel Bozdog, Jason Reece

Proceedings Volume 11611, 1161126 (2021) https://doi.org/10.1117/12.2584759

KEYWORDS: Overlay metrology, Diffraction, Diffraction gratings, Semiconducting wafers

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Recent advancements in atomic force microscopy

C. Bozdog, M. van Reijzen, M. Boerema, A. Kalinin, H. Sadeghian

Proceedings Volume 11611, 116112E (2021) https://doi.org/10.1117/12.2595426

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SPIE Journal Paper | 25 October 2016

Measuring self-aligned quadruple patterning pitch walking with scatterometry-based metrology utilizing virtual reference

Taher Kagalwala, Alok Vaid, Sridhar Mahendrakar, Michael Lenahan, Fang Fang, Paul Isbester, Michael Shifrin, Yoav Etzioni, Aron Cepler, Naren Yellai, Prasad Dasari, Cornel Bozdog

JM3, Vol. 15, Issue 04, 044004, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.044004

KEYWORDS: Semiconducting wafers, Metrology, Optical lithography, Scatterometry, Critical dimension metrology, Finite element methods, Scatter measurement, Diffractive optical elements, Transmission electron microscopy, Reactive ion etching

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Proceedings Article | 30 March 2016 Paper

Paper

Advanced in-line metrology strategy for self-aligned quadruple patterning

Mary Breton, Benoit L'herron, Raja Muthinti, Florence Nelson, Abraham De La Pena, Fee li Le, Eric Miller, Stuart Sieg, James Demarest, Peter Gin, Matthew Wormington, Aron Cepler, Cornel Bozdog, Brock Mendoza, Matthew Sendelbach, Robin Chao, Shay Wolfling, Sivananda Kanakasabapathy, John Gaudiello, Nelson Felix, Tom Cardinal

Proceedings Volume 9778, 977813 (2016) https://doi.org/10.1117/12.2220601

KEYWORDS: Critical dimension metrology, Metrology, Transmission electron microscopy, Optical lithography, Semiconducting wafers, Etching, Process control, Scatterometry, Reactive ion etching, Diffractive optical elements

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Self-Aligned Quadruple Patterning (SAQP) is a promising technique extending the 193-nm lithography to manufacture structures that are 20nm half pitch or smaller. This process adopts multiple sidewall spacer image transfers to split a rather relaxed design into a quarter of its original pitch. Due to the number of multiple process steps required for the pitch splitting in SAQP, the process error propagates through each deposition and etch, and accumulates at the final step into structure variations, such as pitch walk and poor critical dimension uniformity (CDU). They can further affect the downstream processes and lower the yield. The impact of this error propagation becomes significant for advanced technology nodes when the process specifications of device design CD requirements are at nanometer scale. Therefore, semiconductor manufacturing demands strict in-line process control to ensure a high process yield and improved performance, which must rely on precise measurements to enable corrective actions and quick decision making for process development. This work aims to provide a comprehensive metrology solution for SAQP.

During SAQP process development, the challenges in conventional in-line metrology techniques start to surface. For instance, critical-dimension scanning electron microscopy (CDSEM) is commonly the first choice for CD and pitch variation control. However, it is found that the high aspect ratio at mandrel level processes and the trench variations after etch prevent the tool from extracting the true bottom edges of the structure in order to report the position shift. On the other hand, while the complex shape and variations can be captured with scatterometry, or optical CD (OCD), the asymmetric features, such as pitch walk, show low sensitivity with strong correlations in scatterometry. X-ray diffraction (XRD) is known to provide useful direct measurements of the pitch walk in crystalline arrays, yet the data analysis is influenced by the incoming geometry and must be used carefully.

A successful implementation of SAQP process control for yield improvement requires the metrology issues to be addressed. By optimizing the measurement parameters and beam configurations, CDSEM measurements distinguish each of the spaces corresponding to the upstream mandrel processes and report their CDs separately to feed back to the process team for the next development cycle. We also utilize the unique capability in scatterometry to measure the structure details in-line and implement a “predictive” process control, which shows a good correlation between the “predictive” measurement and the cross-sections from our design of experiments (DOE). The ability to measure the pitch walk in scatterometry was also demonstrated. This work also explored the frontier of in-line XRD capability by enabling an automatic RSM fitting on tool to output pitch walk values. With these advances in metrology development, we are able to demonstrate the impacts of in-line monitoring in the SAQP process, to shorten the patterning development learning cycle to improve the yield.

Proceedings Article | 29 March 2016 Paper

Paper

Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)

Matthew Sendelbach, Raja Muthinti, Parker Lund, Aron Cepler, John Gaudiello, Oded Cohen, Cornel Bozdog, Mark Klare, Nicolas Loubet, Robin Chao, Michael Guillorn, Nelson Felix, Shay Wolfling, John Ott

Proceedings Volume 9778, 977810 (2016) https://doi.org/10.1117/12.2220379

KEYWORDS: Nanowires, Silicon, Germanium, Metrology, Gallium arsenide, Optical lithography, Scatterometry, Metals, Semiconducting wafers, Multilayers

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Proceedings Article | 24 March 2016 Paper

Paper

Hybrid enabled thin film metrology using XPS and optical

Byung Cheol Kang, Prasad Dasari, Alok Vaid, Cornel Bozdog, Givantha Iddawela, Sridhar Mahendrakar, Michael Lenahan, Mainul Hossain, Padraig Timoney, Abner Bello, Heath Pois, Wei Ti Lee, Mark Klare, Michael Kwan, Paul Isbester, Matthew Sendelbach, Naren Yellai, Tom Larson

Proceedings Volume 9778, 97780M (2016) https://doi.org/10.1117/12.2220299

KEYWORDS: Metrology, Thin films, X-rays, X-ray optics, Semiconducting wafers, Wafer-level optics, Process control, Ellipsometry, Diffractive optical elements, Deposition processes, Optical testing, Dielectrics, Optical properties

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Proceedings Article | 24 March 2016 Paper

Paper

Scatterometry-based metrology for SAQP pitch walking using virtual reference

Sridhar Mahendrakar, Fang Fang, Aron Cepler, Alok Vaid, Michael Lenahan, Paul Isbester, Michael Shifrin, Prasad Dasari, Cornel Bozdog, Naren Yellai, Taher Kagalwala, Yoav Etzioni

Proceedings Volume 9778, 97781W (2016) https://doi.org/10.1117/12.2228329

KEYWORDS: Transmission electron microscopy, Metrology, Optical lithography, Scatterometry, Reactive ion etching, Etching, Semiconducting wafers, Diffractive optical elements, Critical dimension metrology, Scatter measurement

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Proceedings Article | 23 March 2016 Paper

Paper

Optical metrology for advanced process control: full module metrology solutions

Cornel Bozdog, Igor Turovets

Proceedings Volume 9782, 97820E (2016) https://doi.org/10.1117/12.2219919

KEYWORDS: Metrology, Process control, Etching, Chemical mechanical planarization, Optical metrology, Semiconducting wafers, Optical lithography, Optics manufacturing, Copper, Scatterometry

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Proceedings Article | 19 March 2015 Paper

Paper

Hybrid metrology implementation: server approach

Alok Vaid, Carmen Osorio, Eyal Grubner, Charles Kang, Cornel Bozdog, Padraig Timoney, Alex Elia, Naren Yellai, Toru Ikegami, Masahiko Ikeno

Proceedings Volume 9424, 94241H (2015) https://doi.org/10.1117/12.2087233

KEYWORDS: Metrology, Critical dimension metrology, Semiconducting wafers, Reactive ion etching, Etching, Data processing, Data communications, Process control, Algorithm development

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Proceedings Article | 19 March 2015 Paper

Paper

Scatterometry-based defect detection for DSA in-line process control

Robin Chao, Chi-Chun Liu, Cornel Bozdog, Aron Cepler, Matthew Sendelbach, Oded Cohen, Shay Wolfling, Todd Bailey, Nelson Felix

Proceedings Volume 9424, 942419 (2015) https://doi.org/10.1117/12.2087093

KEYWORDS: Defect detection, Scatterometry, Semiconducting wafers, Scanning electron microscopy, Process control, Inspection, Metrology, Optical lithography, Image analysis, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Improved scatterometry time-to-solution using virtual reference

Alok Vaid, Gilad Wainreb, Yinon Katz, Cornel Bozdog, Matt Sendelbach, Givantha Iddawela, Jamie Tsai, Paul Isbester, Byung Cheol (Charles) Kang, Michael Klots

Proceedings Volume 9424, 94240X (2015) https://doi.org/10.1117/12.2087232

KEYWORDS: Scatterometry, Metrology, Data modeling, Etching, Time metrology, Silicon, Model-based design, Transmission electron microscopy, Geometrical optics

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SPIE Journal Paper | 8 December 2014

Hybrid metrology co-optimization of critical dimension scanning electron microscope and optical critical dimension

Alok Vaid, Carmen Osorio, Jamie Tsai, Cornel Bozdog, Matthew Sendelbach, Eyal Grubner, Roy Koret, Shay Wolfling

JM3, Vol. 13, Issue 04, 041413, (December 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041413

KEYWORDS: Critical dimension metrology, Metrology, Semiconducting wafers, Scanning electron microscopy, Electron microscopes, Image analysis, Modulation, Diffractive optical elements, Data modeling

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SPIE Journal Paper | 6 November 2014

Hybrid metrology: from the lab into the fab

Alok Vaid, Alexander Elia, Givantha Iddawela, Cornel Bozdog, Matthew Sendelbach, Byungcheol Kang, Paul Isbester, Shay Wolfling

JM3, Vol. 13, Issue 04, 041410, (November 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041410

KEYWORDS: Line edge roughness, Metrology, Scatterometry, Data modeling, Semiconducting wafers, Critical dimension metrology, Photoresist materials, Transmission electron microscopy, Etching, Scatter measurement

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Proceedings Article | 2 April 2014 Paper

Paper

Hybrid metrology universal engine: co-optimization

Shay Wolfling, Alok Vaid, Carmen Osorio, Jamie Tsai, Cornel Bozdog, Matthew Sendelbach, Eyal Grubner, Roy Koret

Proceedings Volume 9050, 905009 (2014) https://doi.org/10.1117/12.2048939

KEYWORDS: Semiconducting wafers, Metrology, Image analysis, Critical dimension metrology, Diffractive optical elements, Modulation, Scanning electron microscopy, Model-based design, Detection and tracking algorithms

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Proceedings Article | 13 May 2013 Paper

Paper

Mueller matrix characterization using spectral reflectometry

Cornel Bozdog, Matthew Sendelbach, Shay Wolfling, Dror Shafir, Gilad Barak, Michal Yachini

Proceedings Volume 8789, 878903 (2013) https://doi.org/10.1117/12.2022549

KEYWORDS: Metrology, Polarization, Reflectometry, Reflectivity, Ellipsometry, Light scattering, Critical dimension metrology, Scattering, Signal to noise ratio, Scatterometry

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Proceedings Article | 10 April 2013 Paper

Paper

Implementation of hybrid metrology at HVM fab for 20nm and beyond

Alok Vaid, Lokesh Subramany, Carl Ford, John Allgair, Gaurav Agrawal, John Taylor, Carsten Hartig, Paul Isbester, Byung Cheol (Charles) Kang, Cornel Bozdog, Givantha Iddawela, Matthew Sendelbach, Limor Issascharoff

Proceedings Volume 8681, 868103 (2013) https://doi.org/10.1117/12.2012339

KEYWORDS: Metrology, Semiconducting wafers, Critical dimension metrology, Transmission electron microscopy, Etching, Process control, Reactive ion etching, Data modeling, High volume manufacturing

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Proceedings Article | 10 April 2013 Paper

Paper

Hybrid approach to optical CD metrology of directed self-assembly lithography

Matthew Sendelbach, Igor Turovets, Renan Milo, Stephane Godny, Masafumi Asano, Koichi Wakamoto, Akiko Kawamoto, Kazuto Matsuki, Cornel Bozdog, Ronen Urenski

Proceedings Volume 8681, 86812D (2013) https://doi.org/10.1117/12.2012660

KEYWORDS: Metrology, Critical dimension metrology, Scanning transmission electron microscopy, Semiconducting wafers, Lithography, Polymers, Process control, Chemical elements, Geometrical optics, Directed self assembly

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Proceedings Article | 4 April 2012 Paper

Paper

Hybrid metrology solution for 1X-node technology

Mark Kelling, Masahiko Ikeno, Elad Arnon, Nedal Saleh, Carsten Hartig, Peter Ebersbach, Erin McLellan, Cornel Bozdog, Matthew Sendelbach, Alexander Elia, Takahiro Kawasaki, Helen Kim, Hiroki Kawada, John Allgair, Igor Turovets, Narender Rana, Alok Vaid, Roy Koret, Toru Ikegami

Proceedings Volume 8324, 832404 (2012) https://doi.org/10.1117/12.916940

KEYWORDS: Line edge roughness, Scatterometry, Data modeling, Metrology, Critical dimension metrology, Metals, Semiconducting wafers, Extreme ultraviolet, Scatter measurement

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SPIE Journal Paper | 1 October 2011

Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin McLellan, Charles Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

JM3, Vol. 10, Issue 04, 043016, (October 2011) https://doi.org/10.1117/12.10.1117/1.3655726

KEYWORDS: Metrology, Scatterometry, Critical dimension metrology, Semiconducting wafers, Data modeling, Atomic force microscopy, Transmission electron microscopy, Inspection, 3D metrology

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Proceedings Article | 20 April 2011 Paper

Paper

A holistic metrology approach: multi-channel scatterometry for complex applications

Alok Vaid, Cornel Bozdog, Boris Sherman, Ronen Urensky, Boaz Brill, Susan Emans, Igor Turovets, Hyang Kyun Kim, Matthew Sendelbach

Proceedings Volume 7971, 797113 (2011) https://doi.org/10.1117/12.881638

KEYWORDS: Etching, Scatterometry, Channel projecting optics, Metrology, Data modeling, Polarization, Optics manufacturing, Metals, Semiconducting wafers

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Proceedings Article | 29 March 2011 Paper

Paper

A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM

Ahmad Katnani, Susan Ng, Cornel Bozdog, Carsten Hartig, Narender Rana, Bin Bin Yan, John Allgair, Erin Mclellan, Matthew Sendelbach, Peter Ebersbach, Boris Sherman, Michael Sendler, Chas Archie, Yun Tao Jiang, Igor Turovets, Helen Kim, Boaz Brill, Mark Kelling, Ronen Urensky, Alok Vaid

Proceedings Volume 7971, 797103 (2011) https://doi.org/10.1117/12.881632

KEYWORDS: Metrology, Critical dimension metrology, Scatterometry, Semiconducting wafers, Metals, Transmission electron microscopy, Data modeling, Atomic force microscopy, Inspection

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SPIE Journal Paper | 1 October 2010

Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry targets

Alok Vaid, Matthew Sendelbach, Daniel Moore, Timothy Brunner, Nelson Felix, Pawan Rawat, Cornel Bozdog, Hyang Kyun Kim, Michael Sendler, Stanislav Stepanov, Victor Kucerov

JM3, Vol. 9, Issue 04, 041306, (October 2010) https://doi.org/10.1117/12.10.1117/1.3514707

KEYWORDS: Scatterometry, Semiconducting wafers, Optical properties, Critical dimension metrology, Optical testing, Finite element methods, Diffractive optical elements, Lithography, Data modeling, Metrology

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Proceedings Article | 2 April 2010 Paper

Paper

Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry gratings

Timothy Brunner, Michael Sendler, Matthew Sendelbach, Pawan Rawat, Alok Vaid, Cornel Bozdog, Daniel Moore, Stanislav Stepanov, Helen Kim, Nelson Felix, Victor Kucerov

Proceedings Volume 7638, 76381H (2010) https://doi.org/10.1117/12.846648

KEYWORDS: Scatterometry, Finite element methods, Semiconducting wafers, Optical properties, Critical dimension metrology, Diffractive optical elements, Metrology, Data modeling, Optical testing, Scatter measurement

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Proceedings Article | 23 March 2009 Paper

Paper

Product-driven material characterization for improved scatterometry time-to-solution

Michael Sendler, Stanislav Stepanov, Yoel Cohen, Victor Kucherov, Boaz Brill, Matthew Sendelbach, Carsten Hartig, Hyang Kyun Kim, Cornel Bozdog, Alok Vaid

Proceedings Volume 7272, 72720V (2009) https://doi.org/10.1117/12.814380

KEYWORDS: Scatterometry, Material characterization, Optical properties, Semiconducting wafers, Metals, Critical dimension metrology, Etching, Silicon, Metrology, Wafer-level optics

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Proceedings Article | 2 June 2003 Paper

Paper

FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches

Peter Rosenthal, Cornel Bozdog, George Stojakovic, Shoaib Zaidi, Sylvie Bosch Charpenay, Alois Gutmann, Ulrich Mantz

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.484998

KEYWORDS: FT-IR spectroscopy, Semiconducting wafers, Metrology, Scanning electron microscopy, Etching, Nondestructive evaluation, Silicon, Reflectivity, Infrared radiation, Transistors

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Showing 5 of 28 publications

Conference Committee Involvement (4)

Metrology, Inspection, and Process Control XXXVIII

26 February 2024 | San Jose, California, United States

Metrology, Inspection, and Process Control XXXVII

27 February 2023 | San Jose, California, United States

Metrology, Inspection, and Process Control XXXVI

25 April 2022 | San Jose, California, United States

Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV

22 February 2021 | Online Only, California, United States

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