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Craig Ward
at Oxford Instruments
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Publications (1)
Proceedings Article | 23 March 2020 Paper
Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance
Andy Goodyear, Stephanie Baclet, Mike Cooke, Andrew Newton, Craig Ward, Tania Hemakumara, Matthew Loveday, Mark Dineen
Proceedings Volume 11329, 113290I (2020) https://doi.org/10.1117/12.2558732
KEYWORDS: Etching, Gallium nitride, Plasma, Semiconducting wafers, Argon, Reactive ion etching, Field effect transistors, Chlorine
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