Microstructural, optical and electrical properties of Sc-doped ZnO films grown by RF magnetron sputtering at room
temperature were investigated. The deposition pressure was varied from 0.3 to 2.0 Pa. XRD spectra indicated that the
(100) peak of the film weakened as the reaction pressure decreased and the (110) peak strengthened at a preferred
pressure, 0.3Pa. Compare with (100) and (110) peaks, the intensity of (002) peak was relative weak. The strain in the
film was investigated. The average transmittance of these films was above 90% in the wavelength range from 400 to 800
nm, while decreased in short wavelength region due to the light scattering. More significantly, various optical band gap
of the films were found correspond with different pressure. The causation might be due to the Burstein-Moss effect.