Prof. Czeslaw Skierbiszewski Profile

Prof. Czeslaw Skierbiszewski

at Institute of High Pressure Physics

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 16 February 2020 Presentation + Paper

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

Henryk Turski, Shyam Bharadwaj, Marcin Siekacz, Grzegorz Muziol, Mikolaj Chlipala, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Szymon Stanczyk, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proc. SPIE. 11280, Gallium Nitride Materials and Devices XV

KEYWORDS: Quantum wells, Continuous wave operation, Light emitting diodes, Semiconductor lasers, Gallium nitride, Indium gallium nitride, Molecular beam epitaxy

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Proceedings Article | 27 March 2013 Paper

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig Wasilewski, Sylwester Porowski, Czesław Skierbiszewski

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Chemical species, Crystals, Indium, Diffusion, Nitrogen, Gallium nitride, Indium gallium nitride, Gallium, Molecular beam epitaxy, Indium nitride

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Proceedings Article | 4 March 2013 Paper

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Quantum wells, Waveguides, Cladding, Nitrogen, Semiconductor lasers, Gallium nitride, Diodes, Indium gallium nitride, Plasma

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Proceedings Article | 17 February 2011 Paper

Plasmonic cladding InGaN MQW laser diodes

P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, T. Suski

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Plasmonics, Refractive index, Waveguides, Cladding, Nitrogen, Semiconductor lasers, Gallium nitride, Indium gallium nitride, Molecular beam epitaxy, Plasma

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Proceedings Article | 8 February 2007 Paper

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

T. Swietlik, C. Skierbiszewski, R. Czernecki, G. Franssen, P. Wisniewski, M. Leszczynski, I. Grzegory, P. Mensz, T. Suski, P. Perlin

Proc. SPIE. 6473, Gallium Nitride Materials and Devices II

KEYWORDS: Quantum wells, Waveguides, Optical properties, Luminescence, Photons, Semiconductor lasers, Gallium nitride, Aluminum, Gallium, Plasma

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Proceedings Article | 3 March 2006 Paper

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

C. Skierbiszewski, G. Cywiński, M. Siekacz, A. Feduniewicz-Zmuda, L. Nevou, L. Doyennette, M. Tchernycheva, F. Julien, J. Smalc, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, J. Domagała, T. Remmele, M. Albrecht, S. Porowski

Proc. SPIE. 6121, Gallium Nitride Materials and Devices

KEYWORDS: Polishing, Quantum wells, Indium, Gallium nitride, Telecommunications, Aluminum, Superlattices, Molecular beam epitaxy, Plasma, Absorption

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Proceedings Article | 12 October 2005 Paper

Potential of MBE for gallium nitride based lasers

S. Porowski, C. Skierbiszewski

Proc. SPIE. 5958, Lasers and Applications

KEYWORDS: Semiconductors, Quantum wells, Crystals, Interfaces, Doping, Semiconductor lasers, Gallium nitride, Optoelectronic devices, Aluminum, Gallium

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Proceedings Article | 11 May 2004 Paper

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Piotr Perlin, Mike Leszczynski, Pawel Prystawko, Robert Czernetzki, Przemek Wisniewski, Janusz Weyher, Grzegorz Nowak, Jola Borysiuk, Lucja Gorczyca, Tomasz Swietlik, Gijs Franssen, Agata Bering, Czeslaw Skierbiszewski, Izabella Grzegory, Tadek Suski, Sylwester Porowski

Proc. SPIE. 5365, Novel In-Plane Semiconductor Lasers III

KEYWORDS: Mirrors, Etching, High power lasers, Crystals, Semiconductor lasers, Gallium nitride, Sapphire, Diodes, Gallium, Temperature metrology

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Proceedings Article | 17 April 2001 Paper

Epitaxy on GaN bulk crystals

M. Leszczynski, P. Prystawko, R. Czernecki, J. Lehnert, Piotr Perlin, P. Wisniewski, Cz. Skierbiszewski, T. Suski, G. Nowak, Fouad Karouta, J. Holst, I. Grzegory, S. Porowski

Proc. SPIE. 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

KEYWORDS: Luminescence, Crystals, X-ray diffraction, Reflectivity, Atomic force microscopy, Gallium nitride, Sapphire, Epitaxy, Metalorganic chemical vapor deposition, Single crystal X-ray diffraction

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Showing 5 of 9 publications

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