We have developed new positive-tone molecular resist material, <i>C</i>-4-(2-methyl-2-adamantyloxycarbonylmethoxy)
phenylcalixresorcinarene (MGR110P). MGR110P showed high solubility in both conventional resist solvents such as
propylene glycol monomethyl ether and cyclohexanone. MGR110P was single molecular without molecular weight
disperse. A positive-tone molecular resist based on MGR110P was evaluated by EB lithography (EBL) and EUV
lithography (EUVL). This resist could be developed a standard alkaline developer of 0.26N TMAHaq. EB patterning
results showed the resolution of this resist on a HMDS primed Si wafer to be 40 nm line and space at an EB exposure
dose of 28μC/cm<sup>2</sup>. The line edge roughness (LER) showed 3.8 nm at 50 nm line and space pattern at EB exposure dose
of 26μC/cm<sup>2</sup>. Unfortunately, 30 nm line and space pattern collapsed. In addition, EUV patterning results showed the
resolution on an organic layer substrate to be 45 nm line and space at an EUV exposure dose of 10.3 mJ/cm<sup>2</sup>.
Unfortunately, 40 nm to 30 nm line and space pattern collapsed.