Planar laser induced fluorescence has been used to acquire time sequence images of ground-state, neutral Si and SiO during laser ablation of an Si target in vacuum and in the presence of a background gas at a fluence of 3-4 J/cm2. The SiO images, taken in air, strongly suggest that the observed SiO is created through reaction of silicon with oxygen at the contact front as the plume expands.
The Direct Simulation Monte Carlo (DSMC) method for simulating rarified gasdynamics has been applied to the problem of pulses laser deposition. Both 1D and 2D axisymmetric simulations were carried out. In both, a source of silicon expands into the background gas of argon in the presence of a diffusely reflecting substrate. Density, temperature, and axial flow velocity for each species are computed as functions of position and time. Particle flux and energy incident on the substrate are also monitored as functions of time. The simulation results are in good agreement with experimental plume diagnostics and film growth rates vs. pressure data.
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