This report will focus on the status of GaN HEMT based amplifier technology development at RFMD. This technology
is based around GaN on semi-insulating SiC substrates for optimal thermal performance. RFMD's 0.5μm gate
technology features high performance advanced field plate structures, including a unit power cell producing high gain
(21dB), high power density (3-5W/mm at 28V) and high efficiency (65-70 percent) at cellular frequencies. We will
report on transistor and module performance relevant to applications ranging from high power, high bandwidth
amplifiers, to switches and ICs for radar, electronic warfare, cellular infrastructure and homeland security. Additionally,
we will report on reliability results that demonstrate capability for dependable, high voltage operation.