Electron microscopy, along with many other surface science and analytical techniques, offers an array of complementary
sub-techniques that provide additional information to enhance the primary analysis or imaging mode. Most electron
microscopes are built with several additional ports for the installation of complementary analysis modules. One type of
analysis which is particular useful in geology and semiconductor analysis is cathodoluminescence (CL).
A new technique has been developed to allow complementary optical measurements using the electron beam from the
SEM, compatible with most standard commercial SEM systems. Among the optical measurements accessible using the
Cathodoluminescence Universal Extension (CLUE) module are CL, Raman, PL and EDX spectroscopy and imaging.
This paper shows the advantages of using these complementary techniques, and how they can be applied to analysis of
geological and semiconductor materials.
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