PROCEEDINGS ARTICLE | March 24, 2008
Proc. SPIE. 6922, Metrology, Inspection, and Process Control for Microlithography XXII
KEYWORDS: Metrology, Optical lithography, Etching, Spectroscopy, Reflectometry, Process control, Double patterning technology, Critical dimension metrology, Performance modeling, Systems modeling
We review early challenges and opportunities for optical CD metrology (OCD) arising from the potential
insertion of double patterning technology (DPT) processes for critical layer semiconductor production. Due to the
immaturity of these new processes, simulations are crucial for mapping performance trends and identifying potential
metrology gaps. With an analysis methodology similar in spirit to the recent NIST OCD extendability study1, but with
aperture and noise models pertinent to current or projected production metrology systems, we use advanced simulation
tools to forecast OCD precision performance of key structural parameters (eg., CD, sidewall angle) at litho (ADI) and
etch (ACI) steps for a variety of mainstream optical measurement schemes, such as spectroscopic or angle-resolved, to
identify strengths and weaknesses of OCD metrology for patterning process control at 32 and 22nm technology nodes.
Test case geometries and materials for the simulated periodic metrology targets are derived from published DPT process
flows, with ITRS-style scaling rules, as well as rather standard scanner qualification use cases. Consistent with the
NIST study, we find encouraging evidence of OCD extendability through 22nm node dense geometries, a surprising and
perhaps unexpected result, given the near-absence of published results for the inverse optical scattering problem for
periodic structures in the deep sub-wavelength regime.
