In this work silicon pillar waveguides have been proposed to exploit the entire transparent window of silicon. These geometries posses a broad and at dispersion (from 2 to 6 μm) with four zero dispersion wavelengths. We calculate supercontinuum generation spanning over two octaves (2 to >8 μm) with long wavelengths interacting weakly with the lossy substrate. These structures have higher mode confinement in the silicon - away from the substrate, which makes them substrate independent and are promising for exploring new nonlinear phenomena and highly sensitive molecular sensing over the entire silicon's transparency range
The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.
We present progress on 3 laser systems operating near 3 μm: a continuous-wave (cw) widely tunable narrow linewidth
system, a high peak power Q-switched system, and a passively mode-locked system. The cw system emitted average
powers of < 1 W over a wavelength range of 130 nm, with a spectral width of < 1 nm. The Q-switched system produced
pulses with 33 ns and peak power of 576 W. The mode-locked system produced ~20 ps pulses at a repetition rate of 27