The field of semiconductor spintronics has pursued the development of novel device architectures exploiting the spin
degree of freedom in addition to, or in place of, traditional charge based functionality. In particular, theoretical modeling
has predicted that the addition of a magnetic base layer to a bipolar junction transistor has the potential to serve as an
exceptionally efficient spin filter, add intrinsically non-volatile functionality and exhibit extremely fast switching. Here,
we present the experimental implementation of this scheme via the inclusion of a digitally-doped (Ga,Mn)As layer into
the p region of an <i>n-p-n</i> III-As heterojunction bipolar transistor. These proof of principle devices exhibit gain greater
than one, concurrent with robust ferromagnetism, which demonstrates a critical step in the development of an active spin
functional device architecture.