Dr. David P. Bour
Chief Technologist of LED Product Technology at Avogy
SPIE Involvement:
Conference Program Committee | Conference Chair | Author | Instructor
Publications (31)

PROCEEDINGS ARTICLE | March 4, 2011
Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI
KEYWORDS: Refractive index, Light emitting diodes, Waveguides, Cladding, Silver, Semiconductor lasers, Ultraviolet light emitting diodes, Gallium nitride, Indium gallium nitride, Heterojunctions

SPIE Conference Volume | February 7, 2007

SPIE Conference Volume | February 7, 2006

SPIE Conference Volume | April 1, 2005

PROCEEDINGS ARTICLE | June 18, 2004
Proc. SPIE. 5349, Physics and Simulation of Optoelectronic Devices XII
KEYWORDS: Mirrors, Modulation, Silicon, Quantum efficiency, Resistance, Reflectivity, Palladium, Vertical cavity surface emitting lasers, Semiconducting wafers, Wafer bonding

PROCEEDINGS ARTICLE | June 18, 2004
Proc. SPIE. 5349, Physics and Simulation of Optoelectronic Devices XII
KEYWORDS: Quantum wells, Quantum efficiency, Zinc, Doping, Aluminum, Laser damage threshold, Metalorganic chemical vapor deposition, Gallium, Internal quantum efficiency, Temperature metrology

Showing 5 of 31 publications
Conference Committee Involvement (15)
Novel In-Plane Semiconductor Lasers X
24 January 2011 | San Francisco, California, United States
Novel In-Plane Semiconductor Lasers IX
25 January 2010 | San Francisco, California, United States
Optical Technologies for Arming, Safing, Fuzing, and Firing V
5 August 2009 | San Diego, California, United States
Novel In-Plane Semiconductor Lasers VIII
26 January 2009 | San Jose, California, United States
Optical Technologies for Arming, Safing, Fuzing, and Firing IV
13 August 2008 | San Diego, California, United States
Showing 5 of 15 published special sections
Course Instructor
SC054: Group III Nitrides for Optoelectronics - Materials for the Millenium
The course will begin with an outline of the technological importance of nitride semiconductors and an account of their development. The available crystal growth techniques will be described and related to the properties of the resulting thin films or bulk crystals produced. The problems of n- and p-type doping will be considered in the applications to visible LEDs (light emitting diodes) and LDs (laser diodes), followed by a discussion of quantum well structures such as AlGaN/GaN and GaN/InGaN. Some characterization methods will be described and the present state of these materials will be summarized.
SIGN IN TO:
  • View contact details

UPDATE YOUR PROFILE
Is this your profile? Update it now.
Don’t have a profile and want one?

Back to Top