Prof. David K. Ferry
at Arizona State Univ
SPIE Involvement:
Conference Chair | Author
Publications (34)

PROCEEDINGS ARTICLE | February 14, 2008
Proc. SPIE. 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
KEYWORDS: Semiconductors, Scattering, Laser scattering, Raman spectroscopy, Gallium nitride, Phonons, Raman scattering, Picosecond phenomena, Pulsed laser operation, Indium nitride

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6473, Gallium Nitride Materials and Devices II
KEYWORDS: Semiconductors, Scattering, Light scattering, Electroluminescence, Raman spectroscopy, Gallium nitride, Phonons, Raman scattering, Picosecond phenomena, Signal detection

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
KEYWORDS: Semiconductors, Scattering, Electroluminescence, Semiconductor lasers, Raman spectroscopy, Gallium nitride, Phonons, Raman scattering, Picosecond phenomena, Signal detection

PROCEEDINGS ARTICLE | February 15, 2006
Proc. SPIE. 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
KEYWORDS: Semiconductors, Scattering, Raman spectroscopy, Gallium nitride, Monte Carlo methods, Raman scattering, Picosecond phenomena, Electron transport, Pulsed laser operation, Indium nitride

PROCEEDINGS ARTICLE | April 13, 2005
Proc. SPIE. 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
KEYWORDS: Semiconductors, Laser energy, Luminescence, Crystals, Raman spectroscopy, Phonons, Raman scattering, Picosecond phenomena, Two photon excitation microscopy, Indium nitride

PROCEEDINGS ARTICLE | June 16, 2004
Proc. SPIE. 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
KEYWORDS: Semiconductors, Surface plasmons, Scattering, Luminescence, Raman spectroscopy, Gallium nitride, Monte Carlo methods, Raman scattering, Electron transport, Indium nitride

Showing 5 of 34 publications
Conference Committee Involvement (1)
Ultrafast Phenomena in Semiconductors
27 January 1994 | Los Angeles, CA, United States
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