It is well documented that increases in pump module power enables higher power DPSS or CW fiber lasers, but it is important to recognize that increasing the efficiency by which the DPSS or CW fiber laser is pumped drives down both system complexity and cost. Additionally due to the narrow absorption band of the common laser mediums like Ytterbium and Neodymium, it is advantageous to maximize the spectral overlap between the emission of the pump module and the absorption band of the host medium; one way to accomplish this is by the use of Volume Bragg Gratings (VBGs) to both narrow and stabilize (meaning to minimize change with current and/or temperature) the emission of the diode pump module. To this end, we report on the continued progress by nLIGHT to develop and deliver the highest efficiency wavelength-stabilized, diode-laser pumps using single-emitter technology at ~885nm for neodymium DPSS pumping, and 969/976 nm for ytterbium laser pumping. The basis for these improvements is the ensuring the epitaxial structure of the laser diode is optimized not only for efficiency and power but is also properly optimized to minimize the amount of spectral shift with current. Due to the proprietary nature of our epitaxial structures, we are unable to provide exact details. However, throughout this paper, we will abstractly discuss the improvements made to our epitaxy, and how those changes directly affect, and improve upon the module level performance with VBGs, and provide COS and module level results for our element® packages with VBGs to support these claims, with key examples being: at 969/976 nm a 2×6 module with 140 W into 105 μm – 0.16 beam NA, and a 969/976 nm 400 W 2×12 into 200 μm – 0.16 beam NA, along with 888 nm diode module, in a 2×12 layout outputting a maximum of 370 W with 52 % electro-optical efficiency when coupled into 200 μm – 0.18 beam NA
In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using new extra Reduced-mode (x-REM) diode design providing a record ~363 W output from a 2×12 nLIGHT element® in 105 μm diameter fiber. There is also an increasing demand for low size, weight and power-consumption (SWaP) fiber-coupled diodes for compact High Energy Laser (HEL) systems for defense and industrial applications. Using thirty single emitters that were geometricallyand polarization-combined, we have demonstrated 600 watts and 62% efficiency at in 225 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively. Furthermore, we have increased the number of chips to forty and increased the output power to 1kW and 52% in the same fiber diameter and numerical aperture. This results in a fiber-coupled package with specific mass and volume of <0.18 kg/kW and <0.27 cm3/W, respectively.
In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design providing a record ~340 W output from a 2×12 nLIGHT element® in 105 μm diameter fiber. These diodes will allow next generation of fiber-coupled product capable of >250W output power from 105 μm/0.15 NA beam at 915 nm. There is also an increasing demand for low SWaP fiber-coupled diodes for enabling compact high energy laser systems for defense applications. We have demonstrated 600 watts and 60% efficiency at 15C in 220 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively.
Multi-kilowatt, continuous-wave fiber lasers continue to drive the need for higher power, higher brightness, and more efficient diode laser pump modules. It is well documented that increases in pump module power either enable higher power CW fiber lasers or minimize complexity of the multi-stage fiber combiners for a given power. Additionally, increasing pump module brightness positively impacts the SRS threshold of a given multi-kilowatt CW fiber lasers architecture. We report on the continued progress by nLIGHT to develop and deliver the highest brightness diode-laser pumps using single-emitter technology at 976 nm for Ytterbium fiber laser pumping. Building upon our prior developments that have enabled higher emitter counts in the element® packages, nLIGHT is releasing two new 976 nm module configurations: a 2×7 module with 155 W into 105 μm – 0.15 beam NA, and a 375 W 2×12 into 200 μm – 0.16 beam NA. Additionally, we have demonstrated high efficiency designs utilizing a new chip on submount (COS) architecture: with a 430 W 2×12 into 200 μm – 0.16 beam NA and 57% electro-optical efficiency, and an alternative 2×15 design resulting in 600 W at 57 % electro-optical efficiency at 23 A when coupled into 200 μm – 0.18 beam NA.
Kilowatt-class fiber lasers and amplifiers are becoming increasingly important building blocks for power-scaling laser systems in various architectures for directed energy applications. Currently, state-of-the-art Yb-doped fiber lasers operating near 1060 nm operate with optical-to-optical power-conversion efficiency of about 66%. State-of-the-art fiber-coupled pump diodes near 975 nm operate with about 50% electrical-to-fiber-coupled optical power conversion efficiency at 25C heatsink temperature. Therefore, the total system electrical-to-optical power conversion efficiency is about 33%. As a result, a 50-kW fiber laser will generate 75 kW of heat at the pump module and 25 kW at the fiber laser module with a total waste heat of 100 kW. It is evident that three times as much waste heat is generated at the pump module. While improving the efficiency of the diodes primarily reduces the input power requirement, increasing the operating temperature primarily reduces the size and weight for thermal management systems. We will discuss improvement in diode laser design, thermal resistance of the package as well as improvement in fiber-coupled optical-to-optical efficiency to achieve high efficiency at higher operating temperature. These factors have a far-reaching implication in terms of significantly improving the overall SWAP requirements thus enabling DEW-class fiber lasers on airborne and other platforms.
Next-generation industrial fiber lasers enable challenging applications that cannot be addressed with legacy fiber lasers. Key features of next-generation fiber lasers include robust back-reflection protection, high power stability, wide power tunability, high-speed modulation and waveform generation, and facile field serviceability. These capabilities are enabled by high-performance components, particularly pump diodes and optical fibers, and by advanced fiber laser designs. We summarize the performance and reliability of nLIGHT diodes, fibers, and next-generation industrial fiber lasers at power levels of 500 W – 8 kW. We show back-reflection studies with up to 1 kW of back-reflected power, power-stability measurements in cw and modulated operation exhibiting sub-1% stability over a 5 – 100% power range, and high-speed modulation (100 kHz) and waveform generation with a bandwidth 20x higher than standard fiber lasers. We show results from representative applications, including cutting and welding of highly reflective metals (Cu and Al) for production of Li-ion battery modules and processing of carbon fiber reinforced polymers.
Both the fibber laser and diode-pumped solid-state laser market continue to drive advances in pump diode module brightness. We report on the continued progress by nLIGHT to develop and deliver the highest brightness diode-laser pumps using single-emitter technology. Continued advances in multimode laser diode technology [13] and fiber-coupling techniques have enabled higher emitter counts in the element packages, enabling us to demonstrate 305 W into 105 μm – 0.16 NA. This brightness improvement is achieved by leveraging our prior-reported package re-optimization, allowing an increase in the emitter count from two rows of nine emitters to two rows of twelve emitters. Leveraging the two rows off twelve emitter architecture,, product development has commenced on a 400 W into 200 μm – 00.16 NA package. Additionally, the advances in pump technology intended for CW Yb-doped fiber laser pumping has been leveraged to develop the highest brightness 793 nm pump modules for 2 μm Thulium fiber laser pumping, generating 150 W into 200 μm – 0.18 NA and 100 W into 105 μm – 0.15 NA. Lastly, renewed interest in direct diode materials processing led us to experiment with wavelength multiplexing our existing state of the art 200 W, 105 μm – 00.15 NA package into a combined output of 395 WW into 105 μm –– 0.16 NA.
High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, ~915 nm – and ~976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.
Kilowatt-class fiber lasers and amplifiers are becoming increasingly important building blocks for power-scaling laser systems in various different architectures for directed energy applications. Currently, state-of-the-art Yb-doped fiber lasers operating near 1060 nm operate with optical-to-optical power-conversion efficiency of about 66%. State-of-the-art fiber-coupled pump diodes near 975 nm operate with about 50% electrical-to-fiber-coupled optical power conversion efficiency at 25C heatsink temperature. Therefore, the total system electrical-to-optical power conversion efficiency is about 33%. As a result, a 50-kW fiber laser will generate 75 kW of heat at the pump module and 25 kW at the fiber laser module with a total waste heat of 100 kW. It is evident that three times as much waste heat is generated at the pump module. While improving the efficiency of the diodes primarily reduces the input power requirement, increasing the operating temperature primarily reduces the size and weight for thermal management systems. We will discuss improvement in diode laser design, thermal resistance of the package as well as improvement in fiber-coupled optical-to-optical efficiency to achieve high efficiency at higher operating temperature. All of these factors have a far-reaching implication in terms of significantly improving the overall SWAP requirements thus enabling DEW-class fiber lasers on airborne and other platforms.
KEYWORDS: Diodes, Semiconductor lasers, Fiber lasers, Manufacturing, Continuous wave operation, Chemical elements, Optical components, High power lasers, Near field optics
High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.
High-power continuous wave (CW) fiber lasers with excellent beam quality continue to drive demand for higher brightness pump modules at 920 nm and 976 nm. Over the last decade, the brightness requirement for pumping state-of-the-art CW fiber lasers (CWFLs) has risen from approximately 0.5 W/(mm-mR)2 to ~2 W/(mm-mR)2 for today’s mutlikW CWFLs. The most advanced CWFLs demand even higher brightness pump modules in order to minimize design complexity, maximize efficiency, and maximize the stimulated Raman scattering threshold. This need has resulted in a reoptimization of the nLIGHT elementTM line to enable a commercial 200 W, 18-emitter package with a 0.15 NA beam in a 105 μm fiber, corresponding to a brightness of 3.2 W/(mm-mR)2 and a 25 % increase in power over the existing elementTM e14 at 155 W. Furthermore, we have demonstrated the further scalability of this reoptimized design with our next generation COS, resulting in a maximum of 272 W into 105 μm fiber with a brightness of 3.8 W/(mm-mR)2.
KEYWORDS: Diode pumped solid state lasers, High power lasers, Semiconductor lasers, Laser packaging, Laser stabilization, Diodes, High power diode lasers, Reliability, Failure analysis, Reflectivity, Fiber Bragg gratings, Fermium, Frequency modulation
There is an increasing demand for high power diode laser packages with stabilized wavelength in the range of 878 nm to 888 nm for DPSS laser pumping applications. In this paper we present nLIGHT’s most recent development of wavelength-stabilized high power, single emitter laser diode packages, elementTM , for DPSS laser pumps. We will report on how we have scaled single emitter power from 10 W per emitter with our prior generation of 200 μm wide and 3.8 mm long devices to 15 W per emitter for next generation of 5 mm cavity length device for 200 μm - 0.22 NA fiber products. The improvement in power at the chip-on-submount level results in approximately 40% increase in wavelength-stabilized power out of 200 μm fiber excited with a 0.19 NA beam, compared to the current generation elementTM products. Additionally, we will report on the improvements to wavelength-stabilization utilizing volume Bragg gratings, and chip-on-submount reliability for these new 885 nm devices, which drives the overall package reliability.
There is an increasing demand for high-power, high-brightness diode lasers from 8xx nm to 9xx nm for applications such as fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. The kilowatt CW fiber laser pumping (915 nm - 976 nm), in particular, requires the diode lasers to have both high power and high brightness in order to achieve high-performance and reduced manufacturing costs. This paper presents continued progress in the development of high brightness fiber-coupled product platform, elementTM. Further brightness improvement and power-scaling have been enabled by both the rise in chip brightness as well as the increase in number of chips used to couple into a given numerical aperture. We have developed a new generation of high power broad area laser known as reduced-mode diode (REM-diode) which suppresses many of the higher order modes in the slow axis and reduces divergence up to two times at the same operating conditions. To date, we have achieved slow-axis brightness as high as 4.3 W/mm-mrad for devices with thermal resistance of ~2.5 C/W. As a result, we have achieved >75 watts from a 1×6 elementTMin the 9xx nm spectral range; and 177 watts of peak power from a 2×6 elementTM. We have also improved our optics for fiber-coupling which accommodates 7 emitters per polarization in the same numerical aperture. Using this configuration, we project 200 watts of peak power from a 2×7 elementTM with a reliable product at 176 W of power from 105 μm and 0.15 NA fiber. REM-diodes can also be wavelength stabilized using VBGs. The reliability of REM-diodes are equal or better than broad area lasers (BALs). We present current status on ongoing reliability assessment of chip-on-submount.
In this paper we present nLIGHT’s most recent reliability assessment of both the released and newly developed high
power, high brightness single emitter laser diodes for fiber laser pumps and material processing applications. We report
on the latest updates of lifetests performed on released 18W-rated diode lasers which have been successfully
incorporated into nLIGHT’s 210W 200μm/0.18NA elementTM pump module. A total of 371 units of 18W-rated single
emitters at 915 nm, were assessed at 22A and 2 A at a junction temperature, Tj~70ºC. Cumulatively, these devices have
accrued ~ 6.0 million equivalent device hours at module use conditions. The initial reliability analysis based on these
lifetest results support <99% module reliability for 2-year of continuous operation. Industry leading dollars-per-watt
elementTM e06, e12 and e18 packages based on these diode lasers are also presented. Two elementTM e18 packages have
been lifetested for <5400 hours with only one device failure so far. We also report on the initial lifetest of the newly
developed high brightness REM-diodes (Reduced Mode diodes) for new elementTM configuration. Preliminary highly
accelerated lifetest on ~15 W REM-diodes show very low failure rate compared to the control diode lasers under the
same conditions. The more optimized <15W REM-diodes have been lifetested for almost 4000h with no failures
observed so far. Superior performance has already been demonstrated on the initialelementTMe06, e12 and e18 packages
with these new REM designs, supporting a 25% increase in power with a minimal degradation in NA. Module level
reliability assessment is underway.
We report on continued progress in nLIGHT’s high power and high efficiency single emitter laser diodes from 915 nm to 980 nm range used for industrial and pumping applications. High performance has been demonstrated in nLIGHT’s diode laser technology in this spectral range with peak electrical-to-optical power conversion efficiency of ~65%. These diodes have been incorporated into nLIGHT’s fiber-coupled pump module, elementTM. We have reduced the slow-axis divergence of our brightest diodes by a half at the same operating power. This results primarily from suppression of higher-order lateral modes leading to lower beam-parameter-product at a given power compared to conventional broad area lasers. We have device designs that produce slow axis brightness of up to 4.3 W/mm-mrad which is 48% higher compared to our brightest broad area laser. This paper presents nLIGHT’s most recent improvement in slow-axis brightness resulting from reduced number of allowed modes in the slow-axis in a new broad area laser architecture called reduced-mode diodes (REM-diodes). We will detail the resulting power and brightness improvement along with preliminary reliability assessment of these diodes.
M. Kanskar, L. Bao, J. Bai, Z. Chen, D. Dahlen, M. DeVito, W. Dong, M. Grimshaw, J. Haden, X. Guan, M. Hemenway, K. Kennedy, R. Martinsen, J. Tibbals, W. Urbanek, S. Zhang
KEYWORDS: Reliability, Semiconductor lasers, Diodes, Fiber lasers, High power lasers, Continuous wave operation, Near field, Performance modeling, Resistance, Near field optics
We report on continued progress in the development of high power and high brightness single emitter laser diodes from 790 nm to 980 nm for reliable use in industrial and pumping applications. High performance has been demonstrated in nLIGHT’s diode laser technology in this spectral range with corresponding peak electrical-to-optical power conversion efficiency of ~65%. These pumps have been incorporated into nLIGHT’s fiber-coupled pump module, elementTM. We report the latest updates on performance and reliability of chips and fiber-coupled modules. This paper also includes a new chip design with significantly narrower slow-axis divergence which enables further improved reliable power and brightness. Preliminary reliability assessment data for these devices will be presented here as well.
Advances in high performance fiber coupled diode lasers continue to enable new applications as well as strengthen existing uses through progressive improvements in power and brightness [1]. These improvements are most notable in multi-kW direct diode systems and kW fiber laser platforms that effectively transform better beam quality into superior system performance and in DPSS (Diode pumped solid state) application striving to scale TEM00 (fundamental transverse mode) power. We report on our recent single-emitter based fiber-coupled product platform, the elementTM, that addressed these applications at 8xx/9xx nm with optical powers over 200W in a range of fiber core sizes down to 105um and 0.14NA (Numerical Aperture). The product is a culmination of numerous packaging improvements: improving wall plug efficiencies (~50% electrical-to-optical) while improving volume manufacturability, enabling lower costs, improving usable chip brightness by, < 20% over previous generation chips, and increasing the reliable output power to 15W per chip. We additionally report on current developments to extend the power of the product platform to as high as 300W. This will be realized primarily through new chip architectures projected to further increase the useable chip brightness by an additional 20 % and correspondingly scaling reliable output powers. Second order improvements are proposed in packaging enhancements that capitalize on the increased chip power and brightness as well as expand the package’s thermal capabilities. Finally, an extended performance roadmap will translate expected power advances and increasing volumes into a projection of relative $/W decreases over the next several years.
High-power, high-brightness, fiber-coupled pump modules enable high-performance industrial fiber lasers with simple system architectures, multi-kW output powers, excellent beam quality, unsurpassed reliability, and low initial and operating costs. We report commercially available (element™), single-emitter-based, 9xx nm pump sources with powers up to 130 W in a 105 μm fiber and 250 W in a 200 μm fiber. This combination of high power and high brightness translates into improved fiber laser performance, e.g., simultaneously achieving high nonlinear thresholds and excellent beam quality at kW power levels. Wavelength-stabilized, 976 nm versions of these pumps are available for applications requiring minimization of the gain-fiber length (e.g., generation of high-peak-power pulses). Recent prototypes have achieved output powers up to 300 W in a 200 μm fiber. Extensive environmental and life testing at both the chip and module level under accelerated and real-world operating conditions have demonstrated extremely high reliability, with innovative designs having eliminated package-induced-failure mechanisms. Finally, we report integrated Pump Modules that provide < 1.6 kW of fiber-coupled power conveniently formatted for fiber-laser pumping or direct-diode applications; these 19” rack-mountable, 2U units combine the outputs of up to 14 elements™ using fused-fiber combiners, and they include high-efficiency diode drivers and safety sensors.
We report on the continued development of high performance fiber coupled laser diode modules at nLIGHT. We show that by optimizing the laser resonator design single emitter diode lasers can be tailored for high brightness or for reduced $/W applications. For instance, a fiber laser pump module based on 6 single emitter diode lasers couples efficiently into a 105 μm, 0.15 NA fiber with peak operating efficiency <59% and output power < 65W. These results are made possible by optimizing the diode laser slow axis brilliance and by increasing the optical to optical efficiency to 90%. We will also report on the development of tailored laser resonator that meets the power, brightness, and cost targets for industrial applications. For instance, a wider emitter has reliable performance of <18W of output power while maintaining the slow axis divergence required for coupling into a fiber with a 12 mm-mrad beam parameter product. The corresponding 50% increase in output power significantly improves the $/W performance. These results of high brightness and high efficiency demonstrate the pump technology required for next generation solid state, fiber lasers, and materials processing applications.
We report on recent advances in the development of a 1064 nm pulsed master oscillator fiber power amplifier (MOFPA) with integrated modulators enabling programmable temporal pulse shapes and its employment in a tandem photonic amplifier. The MOFPA amplifier chain is seeded by a laser diode operated in the CW regime, yielding very stable spectral characteristics that are independent of the pulse repetition rate and pulse shape. The use of 3 GHz integrated LiNbO3 electro-optic modulators in conjunction with high speed digital electronics results in an excellent pulse shaping capability, a fine pulse amplitude stability and high repetition rate operation (100 kHz-1MHz) with fast rise times (<1ns). Energy per pulse of 8-10 μJ with good beam quality characteristics are obtained using advanced large mode area (LMA) fiber designs in the final power amplifier stage. The output is linearly polarized with a spectral bandwidth of < 0.1 nm. When employed in a tandem amplifier configuration, in which the MOFPA output is input to a single-stage, single-pass Nd:YVO4 amplifier pumped by a single 30 W fiber-coupled 808 nm diode, a 600 mW average power at 100 KHz signal input from the MOFPA was amplified to 6 W with faithful amplification of the input temporal pulse profile while achieving excellent beam quality (M2<1.1) and pulse amplitude stability (< ±3%, 3σ). A model of tandem amplifier performance shows good agreement with experimental results and indicates prospective performance of advanced tandem photonic amplifier configurations.
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