Dr. David Herisson Profile

Dr. David Herisson

at Soitec

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Author

Publications (5)

Proceedings Article | 5 March 2022 Presentation + Paper

Cutting-edge silicon-on-insulator substrate technology for datacenter transceivers and sensing applications

Corrado Sciancalepore, Q. Wilmart, L. Ecarnot, D. Herisson, G. Chabanne, B. Szelag, A. Alami-Idrissi

Proceedings Volume 12005, 1200502 (2022) https://doi.org/10.1117/12.2605732

KEYWORDS: Silicon, Silicon photonics, Semiconducting wafers, Wafer-level optics, Transceivers, Optics manufacturing, CMOS technology, Photonics, Integrated optics, Waveguides

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Proceedings Article | 15 July 2003 Paper

Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control

Jerome Hazart, Gilles Grand, Philippe Thony, David Herisson, Stephanie Garcia, Oliver Lartigue

Proceedings Volume 5041, (2003) https://doi.org/10.1117/12.485218

KEYWORDS: Scatterometry, Critical dimension metrology, Refractive index, Spectroscopy, Silicon, Ultraviolet radiation, Laser induced breakdown spectroscopy, Error analysis, Thin films, Modeling

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Proceedings Article | 16 June 2003 Paper

Advanced patterning studies using shaped e-beam lithography for 65-nm CMOS preproduction

Laurent Pain, Murielle Charpin, Yves Laplanche, David Herisson, J. Todeschini, Ramiro Palla, A. Beverina, H. Leininger, S. Tourniol, M. Broekaart, Emmanuelle Luce, F. Judong, K. Brosselin, Y. Le Friec, F. Leverd, S. Del Medico, V. De Jonghe, Daniel Henry, M. Woo, F. Arnaud

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482336

KEYWORDS: Etching, Electron beam lithography, Lithography, Semiconducting wafers, Optical alignment, Photomasks, Chemistry, Scanners, Oxides, CMOS technology

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Proceedings Article | 2 June 2003 Paper

First review of a suitable metrology framework for the 65-nm technology node

Ermes Severgnini, Mauro Vasconi, David Herisson, Philippe Thony

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.482645

KEYWORDS: Metrology, Line edge roughness, Scatterometry, Scanning electron microscopy, Semiconducting wafers, Reticles, Silicon, Coating, Critical dimension metrology, Edge roughness

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Proceedings Article | 2 June 2003 Paper

Spectroscopic ellipsometry for lithography front-end level CD control: a complete analysis for production integration

David Herisson, DaniEle Neira, Cyril Fernand, Philippe Thony, Daniel Henry, Stephanie Kremer, Marco Polli, Marco Guevremont, Assim Elazami

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485031

KEYWORDS: Single crystal X-ray diffraction, Critical dimension metrology, Lithography, Scanning electron microscopy, Scatterometry, Metrology, Spectroscopic ellipsometry, Electron microscopes, Process control, Semiconducting wafers

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