Mr. David J. Ruede Profile

David J. Ruede

at Entegris Inc

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Author

Publications (6)

Proceedings Article | 2 April 2010 Paper

Advances in the understanding of low molecular weight silicon formation and implications for control by AMC filters

Jürgen Lobert, Philip Cate, David Ruede, Joseph Wildgoose, Charles Miller, John Gaudreau

Proceedings Volume 7638, 763832 (2010) https://doi.org/10.1117/12.848390

KEYWORDS: Silicon, Carbon, Optical filters, Optical lithography, Molecules, Lithography, Contamination, Head-mounted displays, Calibration, Liquids

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Proceedings Article | 5 April 2007 Paper

New filter media development for effective control of trimethysilanol (TMS) and related low molecular weight silicon containing organic species in the photobay ambient

Anatoly Grayfer, Frank Belanger, Phillip Cate, David Ruede

Proceedings Volume 6518, 651842 (2007) https://doi.org/10.1117/12.712208

KEYWORDS: Silicon, Digital filtering, Adsorption, Calibration, Contamination, Chemical analysis, Optical components, Lithography, Semiconductor manufacturing, Carbon

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Proceedings Article | 12 May 2005 Paper

Examination of the prevalence and abundance of noncondensable, nonreactive optical surface contaminants in the scanner environment

F. Belanger, P. Cate, A. Grayfer, R. Petersen, D. Ruede

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.610665

KEYWORDS: Silicon, Contamination, Optical filters, Scanners, Head-mounted displays, Absorption, Optical lithography, Photoresist materials, Chemical analysis, Chemical elements

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Proceedings Article | 28 May 2004 Paper

Airborne molecular contamination control in the micromirror SLM-based deep ultraviolet DUV SIGMA7300 laser pattern generator

Mats Ekberg, Hans Fosshaug, Thomas Ostrom, Peter Bjornangen, Thomas Utterback, Per-Uno Skotte, John Higley, David Ruede, Oleg Kishkovich

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535833

KEYWORDS: Photomasks, Deep ultraviolet, Molecules, Chemical analysis, Climatology, Molecular lasers, Spatial light modulators, Contamination, Optical components, Contamination control

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Proceedings Article | 14 September 2001 Paper

Protecting 248-nm and 193-nm lithography from airborne molecular contamination during semiconductor fabrication

Anatoly Grayfer, Oleg Kishkovich, David Ruede

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435765

KEYWORDS: Contamination, Lithography, Photoresist processing, Semiconductors, Deep ultraviolet, Optical filters, Optical components, Semiconducting wafers, Molecules, Manufacturing

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Airborne molecular contamination monitoring and control historically meant filtration of molecular bases such as ammonia and NMP since the introduction of DUV processes at the 250 nm node. Until recently, equipment manufacturers and photoresist suppliers have primarily focused on molecular base induced resist degradation. Improvements in resist chemistries combined with new robust filtration and molecular base monitoring have allowed device manufacturers to process wafers with few concerns about yield loss due to T-topping and related resist problems. Today the industry has moved to the implementation of real-time molecular base monitoring for improved process control. As device manufacturers move production to 180 nm geometries and pilot lines develop 130 nm processes, issues of resist protection are joined by the potential degradation of lithography system optical components due to deposition of condensable organic molecules. This issue is of particular concern with the introduction of 193 nm exposure systems. The higher energy ArF source increases the probability of these and other contaminants reacting and forming films on exposed optical surfaces. Solutions for the KrF generation have already been extended and supplemented with a new generation of filtration and monitoring. As device geometries shrink, real-time molecular base monitoring is being introduced into photo tool enclosures to help process engineers better understand the impact of resist contamination relative to a few nanometers of shift in CD's and implement procedures to insure high yields are maintained and CD control is tightened. Powerful molecular base filtration complements the resist suppliers' efforts to improve resist sensitivity to molecular bases. In the latest exposure tools hybrid filtration is being introduced to remove condensable organic contaminants specifically to protect the costly optics used in 193 nm steppers and scanners. Studies have been conducted to extend filtration to include acidic species. Results of these programs are presented and potential solutions for future device generations are discussed.

Proceedings Article | 14 September 2001 Paper

Molecular base sensitivity studies of various DUV resists used in semiconductor fabrication

David Ruede, Monique Ercken, Tom Borgers

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435635

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Deep ultraviolet, Photoresist materials, Photoresist processing, Contamination, Semiconductors, Manufacturing, Monochromatic aberrations, Wafer testing

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Showing 5 of 6 publications

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