Prof. David J. Smith Profile

Prof. David J. Smith

Regents Professor at Arizona State Univ

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 1 March 2019 Presentation + Paper

DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers

Jiancheng Yang, Patrick Carey, Fan Ren, Yen-Ting Chen, Y. Liao, Chin-Wei Chang, Jenshan Lin, Marko Tadjer, S. Pearton, David Smith, Akito Kuramata

Proceedings Volume 10919, 1091916 (2019) https://doi.org/10.1117/12.2515006

KEYWORDS: Gallium, Switching, Diodes, Silicon carbide, Doping, Gallium nitride, Ionization, Electrons, Field effect transistors, Dielectrics

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Proceedings Article | 24 February 2017 Paper

Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices

M. B. Ullah, M. Toporkov, V. Avrutin, Ü. Özgür, D. Smith, H. Morkoç

Proceedings Volume 10105, 101050J (2017) https://doi.org/10.1117/12.2260814

KEYWORDS: Heterojunctions, Molecular beam epitaxy, Zinc oxide, Field effect transistors, Magnesium, Beryllium, Zinc, Polarization, Crystals, Gallium nitride, Transmission electron microscopy

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We investigated the crystal structure, growth kinetics and electrical properties of BeMgZnO/ZnO heterostructures grown by Molecular Beam Epitaxy (MBE). Transmission Electron Microscopy (TEM) studies revealed that incorporation of Mg into the BeZnO solid solution eliminates the high angle grain boundaries that are the major structural defects in ternary BeZnO. The significant improvement of x-ray diffraction intensity from quaternary BeMgZnO alloy compared to ternary BeZnO was attributed to the reduction of lattice strain, which is present in the latter due to the large difference of covalent radii between Be and Zn (1.22 Å for Zn, 0.96 Å for Be). Incorporation of Mg, which has a larger covalent radius of 1.41Å, reduced the strain in BeMgZnO thin films and also enhanced Be incorporation on lattice sites in the wurtzite lattice. The Zn/(Be + Mg) ratio necessary to obtain single-crystal O-polar BeMgZnO on (0001) GaN/sapphire templates was found to increase with increasing substrate temperature:3.9, 6.2, and 8.3 at substrate temperatures of 450°C, 475°C, and 500°C, respectively. Based on analysis of photoluminescence spectra from Be_0.03Mg_yZn_0.97-yO and evolution of reflection high-energy electron diffraction patterns observed in situ during the MBE growth, it has been deduced that more negative formation enthalpy of MgO compared to ZnO and the increased surface mobility of Mg adatoms at elevated substrate temperatures give rise to the nucleation of a MgO-rich wurtzite phase at relatively low Zn/(Be + Mg) ratios. We have demonstrated both theoretically and experimentally that the incorporation of Be into the barrier in Zn-polar BeMgZnO/ZnO and O-polar ZnO/BeMgZnO polarization doped heterostructures allows the alignment of piezoelectric polarization vector with that of spontaneous polarization due to the change of strain sign, thus increasing the amount of net polarization. This made it possible to achieve Zn-polar BeMgZnO/ZnO heterostructures grown on GaN/sapphire templates with two-dimensional electron gas densities substantially exceeding those in Zn-polar MgZnO/ZnO and O-polar ZnO/MgZnO heterostructures with similar Mg content.

Proceedings Article | 31 May 2012 Paper

InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications

Oray Cellek, Hua Li, Xiao-Meng Shen, Zhiyuan Lin, Elizabeth Steenbergen, Ding Ding, Shi Liu, Qiang Zhang, Ha Sul Kim, Jin Fan, Michael DiNezza, W. Hank Dettlaff, Preston Webster, Zhaoyu He, Jing-Jing Li, Shane Johnson, David Smith, Yong-Hang Zhang

Proceedings Volume 8353, 83533F (2012) https://doi.org/10.1117/12.925076

KEYWORDS: Long wavelength infrared, Mid-IR, Photodetectors, Superlattices, Infrared radiation, Stereolithography, Infrared photography, Luminescence, Antimony, Gallium antimonide

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Proceedings Article | 28 February 2012 Paper

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

N. Izyumskaya, S. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. Smith, H. Morkoç

Proceedings Volume 8262, 826224 (2012) https://doi.org/10.1117/12.909235

KEYWORDS: Gallium nitride, Silicon, Sapphire, Metalorganic chemical vapor deposition, Optical properties, Scanning electron microscopy, Quantum wells, Light emitting diodes, Luminescence, Chemical vapor deposition

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Proceedings Article | 21 January 2012 Paper

Structural properties of InAs/InAs1-xSbx type-II superlattices

Lu Ouyang, Elizabeth Steenbergen, O. Orkun Cellek, Yong-Hang Zhang, David Smith

Proceedings Volume 8268, 826830 (2012) https://doi.org/10.1117/12.912276

KEYWORDS: Stereolithography, Antimony, Gallium antimonide, Laser sintering, Indium arsenide, Interfaces, Superlattices, Modulation, Metalorganic chemical vapor deposition, X-ray diffraction

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Proceedings Article | 19 February 2011 Paper

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

N. Izyumskaya, S. J. Liu, S. Okur, M. Wu, V. Avrutin, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. Smith, H. Morkoç

Proceedings Volume 7939, 79391W (2011) https://doi.org/10.1117/12.875861

KEYWORDS: Gallium nitride, Silicon, Light emitting diodes, Sapphire, Metalorganic chemical vapor deposition, Scanning electron microscopy, Optical properties, Silica, Wet etching, Carbon

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Proceedings Article | 24 January 2011 Paper

Structural characterization of III-nitride materials and devices

David Smith, Lin Zhou, T. Moustakas

Proceedings Volume 7945, 79451E (2011) https://doi.org/10.1117/12.877470

KEYWORDS: Quantum wells, Indium nitride, Gallium nitride, Light emitting diodes, Diffraction, Transmission electron microscopy, Electron microscopes, Electron microscopy, Quantum dots, Interfaces

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Proceedings Article | 28 August 2010 Paper

Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Theodore Moustakas

Proceedings Volume 7808, 780807 (2010) https://doi.org/10.1117/12.861479

KEYWORDS: Quantum wells, Absorption, Waveguides, Infrared radiation, Ultrafast phenomena, Modulation, Switching, Transmittance, Fiber optic communications, Optical pumping

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Proceedings Article | 23 January 2010 Paper

Intersubband device applications of nitride quantum structures

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Enrico Bellotti, Theodore Moustakas

Proceedings Volume 7608, 76080N (2010) https://doi.org/10.1117/12.836260

KEYWORDS: Quantum wells, Waveguides, Terahertz radiation, Switching, Gallium nitride, Modulation, Ultrafast phenomena, Gallium arsenide, Absorption, Luminescence

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Proceedings Article | 20 February 2009 Paper

Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer

Qian Fan, Jacob Leach, Jinqiao Xie, Umit Ozgur, Hadis Morkoç, L. Zhou, D. Smith

Proceedings Volume 7216, 72162N (2009) https://doi.org/10.1117/12.811678

KEYWORDS: Aluminum nitride, Gallium nitride, Heterojunctions, Polarization, Field effect transistors, Data modeling, Metals, Scanning transmission electron microscopy, Nickel, Fluctuations and noise

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Proceedings Article | 8 February 2007 Paper

AlGaN/GaN MODFET regrown by rf-MBE on MOCVD templates

J. Xie, H. Morkoç, L. Zhou, D. Smith

Proceedings Volume 6473, 64730R (2007) https://doi.org/10.1117/12.706791

KEYWORDS: Gallium nitride, Interfaces, Metalorganic chemical vapor deposition, Field effect transistors, Gallium, Transmission electron microscopy, Aluminum, Doping, Annealing, Semiconducting wafers

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Proceedings Article | 8 February 2007 Paper

Structural characterization of III-nitrides using electron microscopy

David Smith, Lin Zhou, Martha McCartney

Proceedings Volume 6473, 64731J (2007) https://doi.org/10.1117/12.706008

KEYWORDS: Gallium nitride, Indium nitride, Electron microscopy, Quantum wells, Diffraction, Interfaces, Heterojunctions, Transmission electron microscopy, Photomicroscopy, Chromium

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Proceedings Article | 3 March 2006 Paper

Characterization of GaN epitaxial films grown on SiN_x and TiN_x porous network templates

J. Xie, Y. Fu, Ü. Özgür, Y. Moon, F. Yun, H. Morko, H. Everitt, A. Sagar, R. Feenstra, C. Inoki, T. Kuan, L. Zhou, D. Smith

Proceedings Volume 6121, 61210B (2006) https://doi.org/10.1117/12.646858

KEYWORDS: Gallium nitride, Tin, Transmission electron microscopy, Annealing, Silicon carbide, Sapphire, Metalorganic chemical vapor deposition, Luminescence, Scanning electron microscopy, Crystals

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Proceedings Article | 21 January 1993 Paper

Characterization of WCx/B4C multilayers sputtered in argon/methane atmospheres

Patrick Diehl, Mark Lund, David Madsen, Larry McIntyre, David Smith

Proceedings Volume 1742, (1993) https://doi.org/10.1117/12.140571

KEYWORDS: Multilayers, Methane, Argon, Tungsten, Hydrogen, Boron, Carbon, Oxygen, X-rays, Silicon

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Proceedings Article | 23 November 1992 Paper

rf-sputtered Fe/Ge multilayers for neutron-polarizing monochromators

Pierre Boher, Philippe Houdy, M. Monkenbusch, J. Penfold, J. Eastoe, David Smith

Proceedings Volume 1738, (1992) https://doi.org/10.1117/12.130629

KEYWORDS: Iron, Germanium, Crystals, Interfaces, X-rays, Mirrors, Optical components, Magnetism, Monochromators, X-ray diffraction

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Proceedings Article | 1 January 1992 Paper

Magnesium-silicide-based multilayers for soft x-ray optics

Pierre Boher, Philippe Houdy, Louis Hennet, Zhigang Li, Abhijit Modak, David Smith, M. Idir, T. Moreno, Robert Barchewitz, Mikhael Kuehne, Peter Mueller, Jean-Pierre Delaboudiniere

Proceedings Volume 1546, (1992) https://doi.org/10.1117/12.51211

KEYWORDS: X-rays, Magnesium, Silicon, Multilayers, Interfaces, Tungsten, Reflectivity, Californium, X-ray optics, Grazing incidence

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Using a diode rf-sputtering technique, different magnesium silicide based multilayer systems have been deposited in very thin films for optical applications in the soft x-ray range. A detailed structural analysis of the different multilayers has been made using in-situ kinetic ellipsometry, ex-situ grazing x-ray reflection at the copper K-(alpha) line and transmission electron microscopy. The multilayer performances have been measured by synchrotron radiation at the magnesium K-(alpha) and L-(alpha) lines and related to the structural characteristics. For short wavelength, the W/Mg2Si system shows characteristics very similar to those of the more common W/Si system. Non-negligible interdiffusion and limited interface roughness allow the layer thicknesses to be reduced to very low values. Well-defined Bragg peaks are observed even when the double period is as low as 44 angstrom. First Bragg peak reflectivity as high as 31 has been measured at 9.89 angstrom for a multilayer with a double period equal to 84 angstrom and a limited number of periods. This preliminary result is very promising for future applications in the field of x-ray fluorescence analysis. W/Mg2Si and Si3N4/Mg2Si multilayers have also been fabricated for use at higher wavelengths around the Mg L-(alpha) line (286 angstrom). In the case of the W/Mg2Si multilayers have also been fabricated for use at higher wavelengths around the Mg L-(alpha) line (286 angstrom). In the case of the W/Mg2Si system, the tungsten layers are crystallized due to their higher thickness and consequently the interface roughness is slightly higher. In spite of this, more than 20 reflectivity at the first Bragg peak has been measured at normal incidence on different W/Mg2Si samples, with a selectivity two times better than conventional Mo/Si mirrors ((lambda) /(delta) (lambda) approximately equals 20). When we replace tungsten by a thin silicon nitride layer deposited by reactive sputtering, we increase the selectivity up to (lambda) /(delta) (lambda) approximately equals 30, and the thermal stability is drastically improved ( 800 degree(s)C).

Proceedings Article | 1 January 1992 Paper

Tungsten/boron nitride multilayers for XUV optical applications

Pierre Boher, Louis Hennet, F. Pierre, David Smith, Abhijit Modak, M. Idir, Robert Barchewitz

Proceedings Volume 1546, (1992) https://doi.org/10.1117/12.51212

KEYWORDS: Boron, Nitrogen, X-rays, Multilayers, Tungsten, Reflectivity, Interfaces, Grazing incidence, Surface roughness, X-ray optics

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SPIE Journal Paper | 1 August 1991

Silicon/silicon oxide and silicon/silicon nitride multilayers for extreme ultraviolet optical applications

Pierre Boher, Philippe Houdy, Louis Hennet, Jean-Pierre Delaboudiniere, Mikhael Kuehne, P. Muller, Zhigang Li, David Smith

OE, Vol. 30, Issue 08, (August 1991) https://doi.org/10.1117/12.10.1117/12.55920

KEYWORDS: Silicon, Multilayers, X-rays, Reflectivity, Oxygen, Nitrogen, Interfaces, Ellipsometry, Reflection, Absorption

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Proceedings Article | 1 February 1991 Paper

Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications

Pierre Boher, Philippe Houdy, Louis Hennet, Jean-Pierre Delaboudiniere, Mikhael Kuehne, Peter Mueller, Zhigang Li, David Smith

Proceedings Volume 1343, (1991) https://doi.org/10.1117/12.23176

KEYWORDS: Silicon, X-rays, Multilayers, Reflectivity, Oxygen, Nitrogen, Ellipsometry, Interfaces, Absorption, Astronomical imaging

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Proceedings Article | 1 January 1991 Paper

Comparative study of carbon and boron carbide spacing layers inside soft x-ray mirrors

Pierre Boher, Philippe Houdy, P. Kaikati, Robert Barchewitz, L. Van Ijzendoorn, Zhigang Li, David Smith, J. Joud

Proceedings Volume 1345, (1991) https://doi.org/10.1117/12.23312

KEYWORDS: Boron, Carbon, Rhodium, Interfaces, X-rays, Tungsten, Iron, Argon, Reflectivity, Crystals

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