PROCEEDINGS ARTICLE | July 19, 2000
Proc. SPIE. 4066, Photomask and Next-Generation Lithography Mask Technology VII
KEYWORDS: Lithography, Electron beam lithography, Reticles, Control systems, Photomasks, Raster graphics, Critical dimension metrology, Line edge roughness, Binary data, RGB color model
In response to next-generation mask requirements, Etec Systems, Inc has developed a complete raster-based patterning solution to meet the production needs of the 130 nm IC device generation as well as those for early 100 nm production. In developing this new MEBES system, we have aimed at versatility, extendability, and compatibility with conventional high-contrast resists and redesigned it form the ground up. This MEBES system incorporates many technological innovations, such as anew 50 kV electron-beam (e-beam) column, a new raster graybeam writing strategy, a new stage, an integrated automated material handling system, on-board diagnostics, and environmental/thermal control. A discussion of architectural details of the new MEBES system designed to meet the tight requirements of 130-100 nm technology nodes is presented. This comprehensive patterning solution offers the best combination of benefits to the user in terms of versatility, overall system throughput, and extendability. Initial throughput and lithographic performance benchmarks are also presented and are very promising in predicting the ability to meet critical dimension uniformity requirements of 10nm or better, as predicted by the ITRS requirements.
