Dr. Dayong Huang
at Nanyang Institute of Technology
SPIE Involvement:
Author
Publications (1)

Proceedings Article | 8 February 2019 Paper
Proceedings Volume 10843, 108430I (2019) https://doi.org/10.1117/12.2505545
KEYWORDS: Cesium, Gallium nitride, Gallium arsenide, Quantum efficiency, Adsorption, Oxygen, Doping, Aluminum nitride, Interfaces, Electronics engineering

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