The combination of silicon and nanotechnology offers the possibility to design ultrafast silicon electro-optic switches
with speeds of the order of 100 GHz. The design procedure for an ultrafast silicon electro-optic switch with the addition
of photonic crystals is presented. The material medium selected for propagation of the optical signal through the switch
is silicon nanocrystals in silica. A patterned slot waveguide with one-dimensional photonic crystals is proposed as the
preferred slow light waveguide to be used in the design of the electro-optic switch. The ultrafast quadratic electro-optic
effect or Kerr effect is the physical effect utilized, and its analysis for slot waveguides is discussed. The optical structure
analysis of the electro-optic switch using a ring resonator is presented and it is shown theoretically that the use of a slow
light waveguide in the ring resonator can reduce the required externally applied electric field or the radius of the ring
resonator.
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