Dr. Devendra K. Sadana Profile

Dr. Devendra K. Sadana

Manager at IBM Thomas J Watson Research Ctr

SPIE Involvement:

Fellow status | Conference Chair | Author | Editor

Publications (10)

PROCEEDINGS ARTICLE | March 13, 2015

Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

Proc. SPIE. 9364, Oxide-based Materials and Devices VI

KEYWORDS: Semiconductors, Visible radiation, Light emitting diodes, Graphene, Solid state lighting, Gallium nitride, Silicon carbide, Chemical lasers, Laser liftoff, Blue light emitting diodes

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PROCEEDINGS ARTICLE | February 8, 2015

Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)

Proc. SPIE. 9370, Quantum Sensing and Nanophotonic Devices XII

KEYWORDS: Visible radiation, Light emitting diodes, Polarization, Ultraviolet radiation, Luminescence, Crystals, Silicon, Semiconductor lasers, Gallium nitride, Light sources and illumination

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PROCEEDINGS ARTICLE | June 4, 2014

Advanced flexible electronics: challenges and opportunities

Proc. SPIE. 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI

KEYWORDS: Photovoltaics, Solid state lighting, Image processing, Germanium, Nickel, Silicon, Gallium nitride, Sapphire, Semiconducting wafers, Flexible circuits

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PROCEEDINGS ARTICLE | March 18, 2013

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

Proc. SPIE. 8626, Oxide-based Materials and Devices IV

KEYWORDS: Photovoltaics, Light emitting diodes, Crystals, Indium, Silicon, Gallium nitride, Sapphire, Indium gallium nitride, Zinc oxide, Metalorganic chemical vapor deposition

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Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

PROCEEDINGS ARTICLE | February 4, 2013

Gallium nitride on silicon for consumer and scalable photonics

Proc. SPIE. 8631, Quantum Sensing and Nanophotonic Devices X

KEYWORDS: Oxides, Silica, Crystals, Silicon, Scanning electron microscopy, Gallium nitride, Photonics, Aluminum nitride, Epitaxy, Metalorganic chemical vapor deposition

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PROCEEDINGS ARTICLE | January 21, 2012

Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance

Proc. SPIE. 8268, Quantum Sensing and Nanophotonic Devices IX

KEYWORDS: Oscillators, Polarization, Reliability, Resistance, Electronic components, Gallium nitride, Optoelectronic devices, Diodes, Terahertz radiation, Aluminum

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