Dr. Diederik J. Maas
Systems Engineer at TNO
SPIE Involvement:
Author
Area of Expertise:
Charged Particle Optics , Scanning Electron Microscopy , Scanning Helium ion Microscopy , Nano-imaging and -fabrication , Metrology
Websites:
Profile Summary

Dr. D.J. Maas is presently Senior Systems Architect with TNO Science and Industry. From 1998-2006 he was Senior Scientist at Philips Research, where he developed an Electrostatic Aberration Corrector for LV-SEM.
He has obtained is PhD degree from the University of Amsterdam for work that was performed at AMOLF involving coherent control of atomic and molecular excitations using chirped ultrashort infrared laser pulses.
His undergraduate work involved experimental studies of the fractional quantum Hall effect on quantum dots that he made using electron beam lithography (See front cover Physics Today March 2002).
Publications (12)

PROCEEDINGS ARTICLE | March 13, 2018
Proc. SPIE. 10585, Metrology, Inspection, and Process Control for Microlithography XXXII
KEYWORDS: Defect detection, Scattering, Scanners, Particles, Scanning electron microscopy, Scatterometry, Optical metrology, Semiconducting wafers, Signal detection

PROCEEDINGS ARTICLE | June 26, 2017
Proc. SPIE. 10329, Optical Measurement Systems for Industrial Inspection X
KEYWORDS: Wafer-level optics, Reticles, Metrology, Optical spheres, Defect detection, Speckle, Scanners, Particles, Silicon, Optical microscopy, Manufacturing, Inspection, Atomic force microscopy, Scanning electron microscopy, Latex, Semiconducting wafers, Signal detection, Particle contamination, Contamination control, Defect inspection

PROCEEDINGS ARTICLE | March 28, 2017
Proc. SPIE. 10145, Metrology, Inspection, and Process Control for Microlithography XXXI
KEYWORDS: Carbon, Contamination, Sensors, Molecules, Ions, Manufacturing, Scanning electron microscopy, Xenon, Process control, Extreme ultraviolet, Semiconductor manufacturing, Krypton, Semiconducting wafers, Vacuum deposition, Yield improvement, Vacuum equipment

PROCEEDINGS ARTICLE | April 4, 2016
Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII
KEYWORDS: Carbon, Electron beam lithography, Sensors, Ultraviolet radiation, Photons, Xenon, Extreme ultraviolet, Extreme ultraviolet lithography, Neodymium, Plasma

PROCEEDINGS ARTICLE | March 20, 2015
Proc. SPIE. 9425, Advances in Patterning Materials and Processes XXXII
KEYWORDS: Electron beam lithography, Point spread functions, Metrology, Ions, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Helium, Optimization (mathematics), Ion beam lithography

PROCEEDINGS ARTICLE | April 17, 2014
Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V
KEYWORDS: Photons, Electrons, Ions, Scanning electron microscopy, Ionization, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Helium, Selenium

Showing 5 of 12 publications
SIGN IN TO:
  • View contact details

UPDATE YOUR PROFILE
Is this your profile? Update it now.
Don’t have a profile and want one?

Back to Top