Erbium-doped Polymer hybrid slot waveguide amplifier at λ<sub>s</sub>=1530 nm with a 1480 nm pumping wavelength is investigated. Both, the waveguide structure parameters and the Er<sup>3+</sup>-doped polymer intrinsic spectroscopic parameters are swept to analyze the gain contribution sensitivities. Assuming moderate optical transmission losses of 10dB/cm, the predicted net gain typically varies from 0 to 10dB. Due to the excited state absorption (ESA) mechanism in the high intensity slot region, the signal gain is significantly suppressed for large pumping power, leading to the counterintuitive result that there is an optimum pump power value in the sub-100 mW range. The effect of the ion concentration and the ion-ion interaction is considered giving different adjusted parameters in every particular case.
Silicon hybrid photonics has attracted in the last years a growing interest for the integration of various materials within silicon photonics. In this picture, hollow-core slot photonic crystal waveguides play an important role as they allow an efficient overlap between the high electromagnetic power density of propagating modes and the introduced materials. Besides this potential advantage, part of the cost to pay is that light coupling into such waveguides from strip waveguides becomes difficult. We propose here a strategy in order to efficiently side-couple light into such slow light modes, leading to a typical 80% efficiency at nG=30.
A compact microwave photonic filter (MPF) with continuous tunability of central frequency based on a microdisk (or
cascaded microring) resonator on a single silicon-on-insulator (SOI) chip is proposed and experimentally demonstrated.
Assisted by the optical single side-band (OSSB) modulation, the optical frequency responses of microring and microdisk
resonators are mapping to the microwave frequency response to form an MPF whose central frequency is continuously
tunable. Different SOI resonators, including two microdisk chips whose Q factors are 1.07×10<sup>5</sup>, 1.5×10<sup>4</sup> and a cascaded microring chip whose Q factor is 2.9×10<sup>4, </sup>are used to implement the MPFs. The performance of these MPFs is compared in terms of bandwidth, tuning range and rejection ratio. Our approach will allow the implementation of very compact, low-cost, low-consumption and integrated notch MPFs in a silicon chip.
In this paper, we propose the simplest one-dimensional grating waveguide to obtain the wideband slow light. An ideal band indicating group index of 18.3 and bandwidth of 10.3 nm is obtained by plane wave expansion method, which is also verified in the finite-difference time-domain numerical simulation when a Gaussian pulse with bandwidth of 10.3
nm is input into the grating waveguide. Thus, this simple one-dimensional grating waveguide is believed to be widely
used as wideband and low loss slow light delay for optical buffering and signal processing.
We describe two Si based optical-electric modulators based on photonic crystals (PC), which are capable of monolithically integrated with Si photonic integrated circuits. One is a modulator based on Mach-Zehnder interferometer (MZI), the other is a modulator based on photonic band gap. These devices may enable the deployment of ultra-compact (-200 μm) devices with high extinction ration and low insertion loss.
The progress in Si-based optoelectronic devices and their integration for optical communications are summarized. Integrations on different material platforms are described, but emphasis is given to new micro/nano scale emitters, detectors, and light beam controlling devices. The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard CMOS technologies is presented. The possibility of using these devices for computer data communications, board-to-board and chip-to-chip, is also discussed.