Two-dimensional diffusion model was used to analyze the charge-carrier diffusion process in the photosensitive film of photovoltaic HgCdTe IR FPA detectors with a continuous (without mesa-isolation of pixels) absorber layer. Some applications of the model and its inaccuracies are considered. Estimates of the local charge-carrier diffusion length values in the FPA regions under and outside photodiodes were obtained on the basis of spot-scan data.
Using a kinetic Monte Carlo model atomic interlayer exchange influence on the Stranski-Krastsnov (SK) growth mode was investigated. With the increase of the deposited dose, transition from 2D to 3D growth mode within SK region without changing interlayer exchange and the growth parameters, was observed. Limit parameter values corresponding to 2D yields SK and SK yields 3D transitions were determined.