In this study the results of electron mobility and drift velocity calculation in GaAs-in-Al<sub>2</sub>O<sub>3</sub> quantum nanowires, resistance and conductivity of single-wall armchair carbon nanotubes as well as electric current in the nanotubes are presented.
The results of calculation of electron drift velocity in GaAs-in-Al<sub>2</sub>O<sub>3</sub> and GaAs-in-AlAs quantum nanowires as well as
the electric current in the armchair single-wall carbon nanotubes versus time are presented at various electric fields
applied along the structures and different temperature.
The Monte Carlo model of electron transport in SOI MOSFETs is proposed. Both 2D and 3D conditions are considered.
The Poisson equation and boundary conditions are presented for every case. Fully depleted SOI MOSFETs and partially
depleted SOI MOSFETs are contradistinguished. The values of electron current as well as drift velocity in different
parts of SOI MOSFETs channel are calculated by means of the Monte Carlo simulation. The SOI MOSFETs with the
channel length equal to 0.5, 0.25 and 0.1 μm as well as the channel depth equal to 10, 20, 100, 200, 1000 nm are
studied. Drift velocity as a function of the channel depth is obtained. It is shown that the function has a peak at the
channel depth equal to 20 nm.
The Monte Carlo model of the impact ionization in deep submicron MOSFETs is worked out. This model allows the influence of the secondary charge carrier current on the drain current to be evaluated. The developed model is built on the basis of the reduction scheme. Moreover, the model takes into account all the major features of electron transport in deep submicron MOSFETs, the dominant scattering mechanisms, the quantization of electron spectrum as well as the modeling of constructive parameters and basic drain breakdown mechanisms.
In this article the results of calculation of electron scattering rates and the drift velocity of these particles in free standing in vacuum GaAs quantum wire, electron scattering rates via polar optical and acoustic phonons in transistor device structure based on GaAs-in-AlAs quantum wire versus gate voltage, the electric current in armchair single-wall carbon nanotube versus strength of electric field applied along the channel and temperature are presented.
In present investigation the function of average value of drift velocity versus electric field strength in GaAs quantum wires with various dimensions at temperature T=77 K at electric quantum limit is studied. In the framework of the eveloped model the nonparabolicity is taken into account. The scattering rates in the considered structures are calculated with account both noncollisional and collisional broadening of energy levels.
The generation of electron drift velocity oscillations in GaAs-quantum wires with finite length at temperature T=77 K in uniform as well as nonuniform field is studied. The influence of wire length and dominant scattering processes on the amplitude, frequency and attenuation of the oscillations is investigated. The average time of electron drift in the various regions of the quantum wire is calculated.