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Dr. Dmitry N. Pridachin
at V Lashkaryov Institute of Semiconductor Physics
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Author
Publications (3)
Proceedings Article | 26 April 2007 Paper
HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties
M. Yakushev, A. Babenko, V. Varavin, V. Vasil'ev, L. Mironova, D. Pridachin, V. Remesnik, I. Sabrinina, Yu. Sidorov, A. Suslyakov
Proceedings Volume 6636, 663611 (2007) https://doi.org/10.1117/12.742600
KEYWORDS: Heterojunctions, Avalanche photodetectors, Silicon, Mercury cadmium telluride, Wet etching, Annealing, Molecular beam epitaxy, Staring arrays, Semiconducting wafers, Photodiodes
Proceedings Article | 30 September 2003 Paper
The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy
V. Varavin, A. Gutakovsky, S. Dvoretsky, V. Kartashev, A. Latyshev, N. Mikhailov, D. Pridachin, V. Remestnik, S. Rukhlitsky, I. Sabinina, Yu. Sidorov, V. Titov, V. Shvetz, M. Yakushev, A. Aseev
Proceedings Volume 5126, (2003) https://doi.org/10.1117/12.517366
KEYWORDS: Silicon, Gallium arsenide, Tellurium, Molecular beam epitaxy, Mercury, Annealing, Heterojunctions, Photodetectors, Temperature metrology, Photodiodes
Proceedings Article | 14 April 2003 Paper
Status of molecular beam epitaxy of CdxHg1-xTe
A. Antsiferov, L. Burdina, Vasily Varavin, A. Gutakovsky, Sergey Dvoretsky, V. Kartashev, Nikolay Mikhailov, D. Pridachin, V. Remesnik, S. Rykhlitskii, I. Sabinina, Yuri Sidorov, E. Spesivtsev, V. Titov, V. Shvets, M. Yakushev, Alexander Aseev
Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502290
KEYWORDS: Hassium, Silicon, Gallium arsenide, Control systems, Tellurium, Process control, Photodiodes, Interfaces, Molecular beam epitaxy, Molecular beams
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