Molecular beam epitaxy has been used for the growth of Hg1-xCdxTe layers (x = 0.30 - 0.34) on Si(310) substrates. The
grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking
faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical
etching. The 128 x 128 photodiode array with wavelength cut-off λ1/2(77K) = 4.07 μm was fabricated with good
Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT heteroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si -substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.
New generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility growth of mercury cadmium telluride (MCT) solid solution heterostructures (Hs's) by molecular beam epitaxy (MBE). This system allows to grow MCT HS's on substrate up to 4" in diameter and used for future development technology of growth on Si substrate. The development of industrially oriented growth MCT HS's MBE on GaAs 2" in diameter is presented. The electrical characteristics of n-type and p-type MCT HS's MBE and uniformity of MCT composition over the surface area is excellent and satisfied for fabricating multielements arrays of high quality infrared devices.