Dr. Dmitry N. Pridachin
at V Lashkaryov Institute of Semiconductor Physics
SPIE Involvement:
Author
Publications (3)

Proceedings Article | 26 April 2007
Proc. SPIE. 6636, 19th International Conference on Photoelectronics and Night Vision Devices
KEYWORDS: Staring arrays, Avalanche photodetectors, Mercury cadmium telluride, Annealing, Silicon, Photodiodes, Wet etching, Semiconducting wafers, Heterojunctions, Molecular beam epitaxy

Proceedings Article | 30 September 2003
Proc. SPIE. 5126, 17th International Conference on Photoelectronics and Night Vision Devices
KEYWORDS: Photodetectors, Annealing, Gallium arsenide, Silicon, Mercury, Photodiodes, Heterojunctions, Tellurium, Molecular beam epitaxy, Temperature metrology

Proceedings Article | 14 April 2003
Proc. SPIE. 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
KEYWORDS: Interfaces, Gallium arsenide, Silicon, Photodiodes, Control systems, Process control, Molecular beams, Tellurium, Molecular beam epitaxy, Hassium

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