Wafer Current Measurement (WCM) is an emerging technique for in-line process monitoring. A joint development project (JDP) has been conducted by Infineon Technologies and Applied Ma-terials (Process Diagnostics and Control Group). The main goal of this project was development of applications for the WCM technique in production environment and specifically for state of the art DRAM Infineon process. A new generation of SEM review tool with integrated FIB (Ap-plied SEMVision G2 FIB Defect Analysis system) was used for this work. A challenging layer approached in this work was the DTMO (Deep Trench Mask Open) which serves as a hard mask for subsequent deep trench (DT) capacitor formation in a silicon substrate. The aspect ratio of the openings in the DTMO layer can be as high as 20:1. As a result of the aggressive aspect ra-tio and sub-100 nm CDs the only available techniques for evaluating DTMO etch integrity (pos-sible under-etch and/or bottom CD variation) are destructive analysis methods. As a result of the extensive JDP, crucial yield limiting problems such as dielectric or/and stop layer under-etch as well as bottom CD violation have been revealed by the WCM in-line rather than by cross-sectioning in failure analysis laboratory or other destructive means. Besides, on the basis of bottom CD sensitivity of the WCM technique, etch chamber qualification (including matching and adjustment) feasibility was conducted. The motivation behind this is that chamber qualification is essential to shorten cycle time. In production environment the WCM technique is targeted for two basic applications: process monitoring including excursion control and early etch process drift warning and in-line etch chamber qualification. WCM "pilot" has been performed in production after DTMO for four novel DRAM products with CD down to 70 nm.