Low-dimensional transit-time structures for terahertz generation and detection are discussed. The negative conductivity at terahertz frequencies is crucial for generation. It may arise in an array of silicon nanowires (1D), as well as in a thin silicon layer (2D) in “silicon-on-insulator” wafer. Ballistic regime, scattering regime and alternating barrier injection regime (BARITT) are simulated. The latter allows a negative conductivity even for rather strong scattering.
Single-electron solitons (or movable polarons) can originate near a metal surface owing to interaction with image charges. Image charges (really, surface charges) appear in response to the ‘instant’ electron density (probability density). Interaction with metal electrodes (as well as any polarization of the environment) much affects a charge qubits functioning. To verify this theory we propose a crucial experiment based on the motion of electrons in a magnetic field in presence of weak and strong polarization.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.