Effects of vacuum plasma etching with subsequent thermal annealing on electrical properties of thin ferroelectric lead zirconate-titanate films are studied. It is shown that vacuum plasma etching leads to the decrease of electrical properties of the films due to defects formation. It is found that defects induced by ion-beam and reactive-ion etching demonstrate different behavior after the high temperature post-annealing. The annealing after reactive-ion etching leads to practically complete recovering of the film’s properties, whereas the films annealed after ion-beam etching degrade even more. Polarization properties of the films after vacuum plasma etching are studied by piezo-force microscopy.
During failure analysis of integrated circuits (IC), it is often necessary to have opportunity to inspect surface of die. But modern IC processing technology often provide integration of number of overlaping dies in one package (3D package type). In this case upper die complicate access to low die. Thus finding techniques which provide opportunity to inspect surface of each die is actual. In present work the approaches to a die decoupling based on the exposure to fuming nitric acid (FNA) and temperature cycling of IC are considered. The experiments, carried out for 32 GB flash-drive, have shown the possibility of applying mentioned approaches to a die decoupling.
During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contact pads might be damaged due to different factors. In present work several types of damaged contact pads and experimental investigations on its reconstructions by electrochemical deposition of silver and copper are discussed.