In modern High Energy Physics Experiments the electronics modules for controlling and/or data acquisition are
very often exposed to high neutron radiation. It's well known that it can cause many failures during work of such
systems, even total break downs. In such case, the studies of radiation sensitivity of electronic devices should
take place to avoid problems during the lifetime of the experiments.
This article describes the Single Event Effects (SEE) tests of Xilinx Spartan3 XC3S400 FPGA populated
on Altium Live Design Evaluation Board. The results of the tests are presented and discussed. Additionaly
gamma-ray spectrometry analysis of the board has been performed.
The concept of the Altera Nios II embedded processor implementation inside Field Programmable Gate Array (FPGA)
of the CCD camera for the "Pi of the Sky" experiment is presented. The digital board of the CCD camera, its most
important components, current implementation of firmware (VHDL) inside the FPGA and the role of external 8051
microcontroller is briefly described. The main goal of the presented work is to get rid of the external microcontroller and
to design new system with Nios II processor built inside FPGA chip. Constraints for implementing the design into the
existing camera boards are discussed. New possibilities offered by a larger FPGA for next generation of cameras are
Electronic components during High Energy Physics experiments are exposed to high level of radiation. Radiation
environment causes many problems to electronic devices. The goal of several experiments done at DESY (Deutsches Elektronen Synchrotron, Hamburg) was to investigate nature of irradiation effects, caused damages and possible techniques of mitigation. One of aspects of experiments is radiation measurements. The propositions of building radiation monitoring system, using different semiconductor components, are presented. Second aspect is radiation tolerance. Different electronic devices were tested: FPGA chips, CCD sensors, bubble dosimeters and LED diodes. Components were irradiated in TESLA Test Facility 2 tunnel and in laboratory using 241Am/Be neutron source. The results of experiments are included and discussed.
Electronic components during High Energy Physics experiments are exposed to high level of radiation. Radiation environment causes many problems to electronic devices. This report highlights the major hazards to electronics caused by radiation. Several experiments were done and results are included.
The results of proton radiation test of electronic devices for RPC trigger electronic system of CMS detector are presented. For Xilinx Spartan-IIE FPGA the cross section for Single Event Upsets (SEUs) in configuration bits was measured. The dynamic SEUs in flip-flops was also investigated, but not observed. For the FLASH memories no single upsets were detected, but after a huge dose permanent damages of devices were observed. For SDRAM memories, the SEU cross section was measured. A brief description of radiation inducted effects in FPGAs, SRAM and FLASH memories is also presented.