A simple convenient way of forming a selective patterning on a single nanowire was demonstrated by using a conventional optical microscope.
The fine resolution could reach approximately 5μm, which is enough to define electrode patterns on a single nanowire in a two-probe configuration. The photolithographic processes were carried out under the microscope with photoresist-coated substrate deposited by nanowires. Through the image capture and a proper configuration of the various home-made photomasks could produce a selective patterning on an individual nanowire successfully. Current-voltage characteristics of an individual GaN single nanowire were measured as a demonstration.