Prof. Dong-Sing Wuu Profile

Prof. Dong-Sing Wuu

Lifetime Distinguished Professor at National Chung Hsing Univ.

SPIE Involvement:

Fellow status | Senior status | Conference Program Committee | Author

Publications (27)

PROCEEDINGS ARTICLE | March 13, 2015

Study of interface state trap density on characteristics of MOS-HEMT

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Oxides, Contamination, Capacitors, Dielectrics, Interfaces, Silicon, Gallium nitride, Field effect transistors, Molybdenum, Plasma

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PROCEEDINGS ARTICLE | March 13, 2015

HVPE growth of AlXGa1-XN templates for UV-LED applications

Proc. SPIE. 9363, Gallium Nitride Materials and Devices X

KEYWORDS: Diffraction, Quartz, Chemical species, Metals, Crystals, Gallium nitride, Sapphire, Transmittance, Aluminum, Gallium

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PROCEEDINGS ARTICLE | March 9, 2015

Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Proc. SPIE. 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

KEYWORDS: Thin films, Refractive index, Light emitting diodes, Aluminium gallium indium phosphide, Silicon, Resistance, Silicon films, Atomic layer deposition, Zinc oxide, Thin film devices

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PROCEEDINGS ARTICLE | March 9, 2015

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Proc. SPIE. 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

KEYWORDS: Diffraction, Surface plasmons, Light emitting diodes, External quantum efficiency, Nanoparticles, Silver, Coating, Electroluminescence, Transmission electron microscopy, Gallium nitride

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PROCEEDINGS ARTICLE | May 2, 2014

Study of surface plasmons at the metal/semiconductor interface

Proc. SPIE. 9126, Nanophotonics V

KEYWORDS: Surface plasmons, Quantum wells, Light emitting diodes, External quantum efficiency, Nanoparticles, Metals, Interfaces, Silver, Electroluminescence, Internal quantum efficiency

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PROCEEDINGS ARTICLE | March 8, 2014

The growth of hexagonal GaN-on-Si(100) using pulsed laser deposition

Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX

KEYWORDS: Light emitting diodes, Crystals, Silicon, Scanning electron microscopy, Raman spectroscopy, Gallium nitride, Field effect transistors, Metalorganic chemical vapor deposition, Pulsed laser deposition, Plasma

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PROCEEDINGS ARTICLE | February 27, 2014

The performance of GaN LEDs using an embedded finger-type contact

Proc. SPIE. 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

KEYWORDS: Mirrors, Light emitting diodes, External quantum efficiency, Electrodes, Solid state lighting, Copper, Materials science, Gallium nitride, Sapphire, Light sources and illumination

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PROCEEDINGS ARTICLE | March 4, 2013

Growth of high indium InGaN films using a combined deposition technique and its application for long wavelength emitter

Proc. SPIE. 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII

KEYWORDS: Light emitting diodes, Annealing, Luminescence, Indium, Nitrogen, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Pulsed laser deposition, Indium nitride

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PROCEEDINGS ARTICLE | March 4, 2013

Enhancement in external quantum efficiency of 365 nm vertical-type ultraviolet light-emitting diodes with embedded oxide structure

Proc. SPIE. 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII

KEYWORDS: Oxides, Light emitting diodes, External quantum efficiency, Silica, Luminescence, Quantum efficiency, Chemical vapor deposition, Ultraviolet light emitting diodes, Gallium nitride, Sapphire

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PROCEEDINGS ARTICLE | October 15, 2012

High thermal stability of indium-rich InGaN films (33 and 60%) grown by pulsed laser deposition

Proc. SPIE. 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting

KEYWORDS: Visible radiation, Light emitting diodes, Annealing, Luminescence, X-ray diffraction, Indium, Gallium nitride, Indium gallium nitride, Pulsed laser deposition, Indium nitride

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PROCEEDINGS ARTICLE | October 15, 2012

High-yield thin GaN LED using metal bonding and laser lift-off technology

Proc. SPIE. 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting

KEYWORDS: Gold, Light emitting diodes, Metals, Indium, Silicon, Gallium nitride, Sapphire, Semiconducting wafers, Electroless plating, Laser liftoff

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PROCEEDINGS ARTICLE | March 1, 2012

Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications

Proc. SPIE. 8263, Oxide-based Materials and Devices III

KEYWORDS: Thin films, Photodetectors, Diffraction, Deep ultraviolet, Sensors, Crystals, Transmission electron microscopy, Sapphire, Metalorganic chemical vapor deposition, Ultraviolet detectors

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PROCEEDINGS ARTICLE | February 28, 2012

Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Luminescence, Quantum efficiency, Transmission electron microscopy, Ultraviolet light emitting diodes, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Internal quantum efficiency

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PROCEEDINGS ARTICLE | February 28, 2012

High-voltage thin GaN LEDs array

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Mirrors, Light emitting diodes, Electrodes, Polymers, Glasses, Silicon, Gallium nitride, LCDs, Sapphire, Precision processing technology

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PROCEEDINGS ARTICLE | February 6, 2012

Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga2O3 sacrificial layer

Proc. SPIE. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

KEYWORDS: Thin films, Light emitting diodes, Etching, Crystals, Copper, Gallium nitride, Sapphire, Chemical reactions, Metalorganic chemical vapor deposition, Gallium

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PROCEEDINGS ARTICLE | September 26, 2011

X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition

Proc. SPIE. 8104, Nanostructured Thin Films IV

KEYWORDS: Thin films, Crystals, X-rays, Raman spectroscopy, Sapphire, Aluminum, Raman scattering, Zinc oxide, Pulsed laser deposition, Absorption

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PROCEEDINGS ARTICLE | September 24, 2011

Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

Proc. SPIE. 8123, Eleventh International Conference on Solid State Lighting

KEYWORDS: Quantum wells, Light emitting diodes, Optical properties, Luminescence, Raman spectroscopy, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Epitaxial lateral overgrowth, Temperature metrology

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PROCEEDINGS ARTICLE | September 23, 2011

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

Proc. SPIE. 8123, Eleventh International Conference on Solid State Lighting

KEYWORDS: Thin films, Backscatter, Luminescence, Raman spectroscopy, Sapphire, Aluminum, Aluminum nitride, Phonons, Metalorganic chemical vapor deposition, Gallium

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PROCEEDINGS ARTICLE | February 9, 2011

Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate

Proc. SPIE. 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV

KEYWORDS: Thin films, Light emitting diodes, Silica, Reflection, Etching, Interfaces, Scanning electron microscopy, Gallium nitride, Sapphire, Metalorganic chemical vapor deposition

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PROCEEDINGS ARTICLE | March 12, 2010

Promising composite die-bonding materials for high-power GaN-based LED applications

Proc. SPIE. 7602, Gallium Nitride Materials and Devices V

KEYWORDS: Diamond, Light emitting diodes, Particles, Copper, Composites, Silver, Resistance, Gallium nitride, Indium gallium nitride, Chemical engineering

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PROCEEDINGS ARTICLE | February 12, 2010

Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures

Proc. SPIE. 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

KEYWORDS: Near ultraviolet, Light emitting diodes, Silica, Crystals, Interfaces, Transmission electron microscopy, Gallium nitride, Indium gallium nitride, Metalorganic chemical vapor deposition, Crystal optics

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PROCEEDINGS ARTICLE | February 15, 2008

Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: Reflectors, Mirrors, Light emitting diodes, Titanium dioxide, Dielectrics, Silicon, Reflectivity, Gallium nitride, Sapphire, Mirror structures

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PROCEEDINGS ARTICLE | July 11, 2000

Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

Proc. SPIE. 4078, Optoelectronic Materials and Devices II

KEYWORDS: Mirrors, Light emitting diodes, Metals, Gallium arsenide, Silicon, Reliability, Resistance, Electroluminescence, Semiconducting wafers, Wafer bonding

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PROCEEDINGS ARTICLE | July 11, 2000

Initial growth effects on the properties of GaN buffer layer and subsequent GaN overlayer by MOCVD

Proc. SPIE. 4078, Optoelectronic Materials and Devices II

KEYWORDS: Mirrors, Annealing, Crystals, X-rays, X-ray diffraction, Atomic force microscopy, Scanning electron microscopy, Gallium nitride, Sapphire, Metalorganic chemical vapor deposition

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PROCEEDINGS ARTICLE | June 28, 2000

Film stress and adhesion characteristics of passivation layers for thermal ink-jet print head

Proc. SPIE. 4080, Input/Output and Imaging Technolgies II

KEYWORDS: Thin films, FT-IR spectroscopy, Silicon, Coating, Silicon films, Infrared radiation, Silicon carbide, Resistors, Tantalum, Absorption

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PROCEEDINGS ARTICLE | June 18, 1998

Characteristics of heater film for ink-jet printhead

Proc. SPIE. 3422, Input/Output and Imaging Technologies

KEYWORDS: Thin films, Sputter deposition, Resistance, Printing, Aluminum, Resistors, Tantalum, Semiconducting wafers, Thin film devices, Inkjet technology

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PROCEEDINGS ARTICLE | June 18, 1998

Thermal ink-jet device using single-chip silicon microchannels

Proc. SPIE. 3422, Input/Output and Imaging Technologies

KEYWORDS: Microelectromechanical systems, Microfluidics, Optical lithography, Etching, Silicon, Printing, Silicon films, Plasma enhanced chemical vapor deposition, Silicon carbide, Inkjet technology

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Showing 5 of 27 publications

Conference Committee Involvement (5)

Light-Emitting Devices, Materials, and Applications

4 February 2019 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

29 January 2018 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI

30 January 2017 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

15 February 2016 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX

10 February 2015 | San Francisco, California, United States

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