Mr. Dong-Soo Min Profile

Dong-Soo Min

Manager/R&D Ctr at Photronics Inc

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 23 September 2009 Paper

Improved particle control by adopting advanced ceramic materials in dry etcher for defect reduction

Dong-Soo Min, Guen-Ho Hwang, Dong-Heck Lee, Sang-Soo Choi, Hyo-Seok Son, Hyung-Jae Lee, Seung-Mun Son, Kyung-Ho Park

Proceedings Volume 7488, 74882Z (2009) https://doi.org/10.1117/12.833515

KEYWORDS: Plasma, Ceramics, Plasma treatment, Polishing, Particles, Etching, Surface roughness, Scanning electron microscopy, Resistance, Raw materials

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Higher anisotropy and improved surface conditions for 90-nm-node MoSiON ICP dry etch

Dong-Soo Min, Byung-Soo Chang, Hyuk-Joo Kwon, Boo-Yeon Choi

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467493

KEYWORDS: Etching, Chromium, Critical dimension metrology, Phase shifts, Photomasks, Diffractive optical elements, Dry etching, Fluorine, Manufacturing, Transmittance

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Characteristics of selective MoSiON etching in a chlorine plasma

Byung-Soo Chang, Dong-Soo Min, Hyuk-Joo Kwon, Boo-Yeon Choi

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467492

KEYWORDS: Etching, Chromium, Plasma, Glasses, Plasma etching, Chlorine, Ions, Chemistry, Fluorine, Electrodes

Read Abstract +

Proceedings Article | 16 August 2002 Paper

Plasma etch of Cr masks utilizing TCP source for a next-generation plasma source

Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479363

KEYWORDS: Chromium, Etching, Plasma, Photoresist materials, Photomasks, Manufacturing, Plasma etching, Inductance, Dry etching, Cadmium

Read Abstract +

Proceedings Article | 1 August 2002 Paper

Highly anisotropic etching of phase-shift masks using ICP of CF4-SF6-CHF3 gas mixtures

Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Yong-Dae Kim, Dong-Hyuk Lee, Jin-Min Kim, Jin-Su Kim, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Hyuk-Joo Kwon, Boo-Yeon Choi, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476984

KEYWORDS: Etching, Plasma, Photomasks, Phase shifts, Plasma etching, Gases, Chlorine, Scanning electron microscopy, Anisotropic etching, Surface roughness

Read Abstract +

There is considerable interest in phase shift masks as a route to extending the resolution, contrast, and depth of focus of lithographic tools beyond what is achievable with the normal chrome mask technology. A problem that has so far hindered the introduction of phase shift masks has been the difficulty of phase and transmittance control when a phase shift mask is applied to practical use. Also, to apply phase shift layer (MoSiON), it remains that effects several critical mask parameters including sidewall slope, surface roughness, and critical dimension. For these reasons, this process requires a high degree of control of the etch process of shift layer. So in this paper, we described a technique for the fabrication of phase shift masks by etch rate of a MoSiON layer. Etching experiments of MoSiON were performed using different fluorinated gas mixtures. Four of them, CF₄/O₂/He, SF₆/O₂/He, CHF₃/O₂/He and Cl₂/CF₄/O2/He were chosen for high etch rate, sidewall slope, and surface morphology. Each added gases had a unique property on the etch rate, anisotropy, surface roughness and sidewall morphology. Result indicates that vertical slope and smooth surface are obtained using the Cl₂/ CF₄/O₂/He and SF₆/O₂/He mixture. With increasing O₂ flow rate to the SF₆/O₂/He Plasma and added Cl₂ gas to the CF₄/O₂/He Plasma, the MoSiON etching profile becomes anisotropic without undercutting and trench profile. It is probably due to both increasing etch rate and sidewall passivation of Cl₂ ion flux. When Cl₂ gas was added to the CF₄/O₂/He Plasma, the small addition of chlorine was enough to protect the exposed sidewall of the undercutting, therefore, higher flow rate of chlorine had to be added to protect the sidewall of the undercutting by forming a sidewall passivation layer. These results show that both increasing O₂ flow rate to the SF₆/O₂/He Plasma and the addition of Cl₂ to the CF₄/O₂/He plasma are necessary in order to achieve a vertical profile and a smooth surface morphology.

Proceedings Article | 1 August 2002 Paper

Applications of multiple-wavelength absorption endpoint system in photomask dry etcher

Dong-Soo Min, Pil-Jin Jang, Hyuk-Joo Kwon, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476953

KEYWORDS: Chromium, Etching, Signal detection, Photomasks, Signal processing, Absorption, Plasma, Signal to noise ratio, Optics manufacturing, Dry etching

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading

Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458353

KEYWORDS: Chromium, Etching, Photoresist materials, Ions, Oxygen, Dry etching, Plasma, Photomasks, Binary data, Cadmium

Read Abstract +

Proceedings Article | 5 September 2001 Paper

Dry etching of Cr layer and its loading effect

Hyuk-Joo Kwon, D. Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Kyung Park, Soo-Hong Jeong

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438355

KEYWORDS: Chromium, Etching, Oxygen, Photomasks, Critical dimension metrology, Plasma, Photoresist materials, Dry etching, Binary data, Ions

Read Abstract +

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years