High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.
The package structure critically influences the major characteristics of diode laser, such as thermal behavior, output power, wavelength and smile effect. In this work, a novel micro channel cooler (MCC) for stack array laser with good heat dissipation capability and high reliability is presented. Numerical simulations of thermal management with different MCC structure are conducted and analyzed. Based on this new MCC packaging structure, a series of QCW 500W high power laser arrays with hard solder packaging technology has been fabricated. The performances of the laser arrays are characterized. A narrow spectrum of 3.12 nm and an excellent smile value are obtained. The lifetime of the laser array is more than 1.38×10<sup>9</sup> shots and still ongoing.
The high power diode lasers have been widely used in many fields. In this work, a sophisticated high power and high performance horizontal array of diode laser stacks have been developed and fabricated with high duty cycle using hard solder bonding technology. CTE-matched submount and Gold Tin (AuSn) hard solder are used for bonding the diode laser bar to achieve the performances of anti-thermal fatigue, higher reliability and longer lifetime. This array consists of 30 bars with the expected optical output peak power of 6000W. By means of numerical simulation and analytical results, the diode laser bars are aligned on suitable positions along the water cooled cooler in order to achieve the uniform wavelength with narrow spectrum and accurate central wavelength. The performance of the horizontal array, such as output power, spectrum, thermal resistance, life time, etc., is characterized and analyzed.
Due to their high electrical-optical conversion efficiency, compact size and long lifetime, high power diode lasers have
found increased applications in many fields. As the improvement of device technology, high power diode laser bars with
output power of tens or hundreds watts have been commercially available. With the increase of high current and output
power, the reliability and lifetime of high power diode laser bars becomes a challenge, especially under harsh working
conditions and hard-pulse operations. The bonding technology is still one of the bottlenecks of the advancement of high
power diode laser bars. Currently, materials used in bonding high power diode laser bars are commonly indium and goldtin
solders. Experimental and field application results indicates that the lifetime and reliability of high power diode laser
bars bonded by gold-tin solder is much better than that bonded by indium solder which is prone to thermal fatigue,
electro-migration and oxidization. In this paper, we review the bonding technologies for high power diode laser bars and
present the advances in bonding technology for single bars, horizontal bar arrays and vertical bar stacks. We will also
present the challenges and issues in bonding technology for high power diode laser bars and discuss some approaches
and strategies in addressing the challenges and issues.
High power diode lasers have increased application in many fields. In this work, a sophisticated high power and high performance conduction cooled diode laser stack has been developed for long pulse duration and high duty cycle using gold-tin (AuSn) bonding technology. The transient thermal behavior and optical simulation of the laser diode stack module are investigated to optimize the laser device structure. CTE-matched submount and AuSn hard solder are used for bonding the laser diode bar to achieve higher reliability and longer lifetime. Guided by the numerical simulation and analytical results, conduction cooled diode laser stack with high power, long pulse duration and high duty cycle is fabricated and characterized. Compared with the conventional indium bonding technology, the new design is a promising approach to obtain improved performance with high reliability and long lifetime.
Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared “right shoulder” or “multi-peaks”, which were related to the voids in the solder interface layer. Finally, “void-free” techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.
With the improvement of output power, efficiency and reliability, high power semiconductor lasers have been applied in more and more fields. In this paper, a conduction-cooled, high peak output power semiconductor laser array was studied and developed. The structure and operation parameters of G-Stack semiconductor laser array were designed and optimized using finite element method (FEM). A Quasi-continuous-wave (QCW) conduction-cooled G-Stack semiconductor laser array with a narrow spectrum width was fabricated successfully.
High power diode lasers have been widely used in many fields. For many applications, a diode laser needs to be robust under on-off power-cycling as well as environmental thermal cycling conditions. To meet the requirements, the conduction cooled single bar CS-packaged diode laser arrays must have high durability to withstand thermal fatigue and long lifetime. In this paper, a complete indium-free bonding technology is presented for packaging high power diode laser arrays. Numerical simulations on the thermal behavior of CS-packaged diode laser array with different packaging structure were conducted and analyzed. Based on the simulation results, the device structure and packaging process of complete indium-free CS-packaged diode laser array were optimized. A series of high power hard solder CS (HCS) diode laser arrays were fabricated and characterized. Under the harsh working condition of 90s on and 30s off, good lifetime was demonstrated on 825nm 60W single bar CS-packaged diode laser with a lifetime test of more than 6100hours achieved so far with less 5% power degradation and less 1.5nm wavelength shift. Additionally, the measurement results indicated that the lower smile of complete indium-free CS-packaged diode laser arrays were achieved by advanced packaging process.