The EMVA1288 Standard is mostly used for testing and selecting area array and line array image sensors. Nowadays, Time-Delay-Integration (TDI) image sensor, especially novel type TDI-CMOS, will be widely applied in high-quality and low noise imaging domain. The purpose of this paper is to give analysis and improving the test of photo-electricity parameters of TDI image sensor. TDI image sensor has its particular architecture, so it is provided with some unique parameters, such as charge transfer efficiency (CTE). Therefore it is significant to research the improving evaluation method of EMVA1288 Standard. According to the TDI mode, modeling of TDI pixel based on linear model and noise model is achieved. Then researching and finding the improved methods to test CTE and system gain. The measured results of a device are given. The application of evaluation method in this paper is helpful in the process of developing and selecting TDI image sensor.